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Silicon NPN Transistors

Brand/Series	Transistor Series
Configuration	Common Base
Current, Collector	5 A
Current, Gain	8
Dimensions	15.62 x 4.82 x 20.0 mm
Frequency, Operating	3 MHz
Gain, DC Current, Minimum	8
Height	0.787" (20mm)
Length	0.614" (15.62mm)
Material	Si
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	3
Package Type	TO-3P
Polarity	NPN
Power Dissipation	120 W
Primary Type	Si
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Range	Maximum of +150 °C
Transistor Type	NPN
Type	High Voltage
Voltage, Breakdown, Collector to Emitter	800 V
Voltage, Collector to Base	1500 V
Voltage, Collector to Emitter	800 V
Voltage, Collector to Emitter, Saturation	5 V
Voltage, Emitter to Base	7 V
Voltage, Saturation, Base to Emitter	1.5 V
Voltage, Saturation, Collector to Emitter	5 V (Max.)
Width	0.19" (4.82mm)
关键词

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Electronics, Inc. Frequency, Operating 3 MHz  Bipolar Transistors Frequency, Operating 3 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 3 MHz   Gain, DC Current, Minimum 8  NTE Electronics, Inc. Gain, DC Current, Minimum 8  Bipolar Transistors Gain, DC Current, Minimum 8  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 8   Height 0.787" (20mm)  NTE Electronics, Inc. Height 0.787" (20mm)  Bipolar Transistors Height 0.787" (20mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.787" (20mm)   Length 0.614" (15.62mm)  NTE Electronics, Inc. Length 0.614" (15.62mm)  Bipolar Transistors Length 0.614" (15.62mm)  NTE Electronics, Inc. Bipolar Transistors Length 0.614" (15.62mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-3P  NTE Electronics, Inc. Package Type TO-3P  Bipolar Transistors Package Type TO-3P  NTE Electronics, Inc. Bipolar Transistors Package Type TO-3P   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 120 W  NTE Electronics, Inc. Power Dissipation 120 W  Bipolar Transistors Power Dissipation 120 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 120 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Range Maximum of +150 °C  NTE Electronics, Inc. Temperature, Operating, Range Maximum of +150 °C  Bipolar Transistors Temperature, Operating, Range Maximum of +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range Maximum of +150 °C   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type High Voltage  NTE Electronics, Inc. Type High Voltage  Bipolar Transistors Type High Voltage  NTE Electronics, Inc. Bipolar Transistors Type High Voltage   Voltage, Breakdown, Collector to Emitter 800 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 800 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 800 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 800 V   Voltage, Collector to Base 1500 V  NTE Electronics, Inc. Voltage, Collector to Base 1500 V  Bipolar Transistors Voltage, Collector to Base 1500 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 1500 V   Voltage, Collector to Emitter 800 V  NTE Electronics, Inc. Voltage, Collector to Emitter 800 V  Bipolar Transistors Voltage, Collector to Emitter 800 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 800 V   Voltage, Collector to Emitter, Saturation 5 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 5 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 5 V   Voltage, Emitter to Base 7 V  NTE Electronics, Inc. Voltage, Emitter to Base 7 V  Bipolar Transistors Voltage, Emitter to Base 7 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 7 V   Voltage, Saturation, Base to Emitter 1.5 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 1.5 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 1.5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 1.5 V   Voltage, Saturation, Collector to Emitter 5 V (Max.)  NTE Electronics, Inc. Voltage, Saturation, Collector to Emitter 5 V (Max.)  Bipolar Transistors Voltage, Saturation, Collector to Emitter 5 V (Max.)  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Collector to Emitter 5 V (Max.)   Width 0.19" (4.82mm)  NTE Electronics, Inc. Width 0.19" (4.82mm)  Bipolar Transistors Width 0.19" (4.82mm)  NTE Electronics, Inc. Bipolar Transistors Width 0.19" (4.82mm)