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Silicon NPN Transistor, TO218 Package Type

Brand/Series	Transistor Series
Configuration	Common Base
Current, Collector	8 A
Current, Gain	10
Device Dissipation	125 W
Dimensions	15.24 x 4.4 x 13.97 mm
Height	0.55" (13.97mm)
Length	0.6" (15.24mm)
Material	Si
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	3
Package Type	TO-218
Polarity	NPN
Power Dissipation	125 W
Primary Type	Si
Resistance, Thermal, Junction to Case	1.2 °C/W
Temperature, Junction, Operating	0 to 175 °C
Temperature, Operating, Maximum	+175 °C
Temperature, Operating, Minimum	-65 °C
Temperature, Operating, Range	-65 to +175 °C
Transistor Polarity	NPN
Transistor Type	NPN
Type	High Voltage, Switch
Voltage, Breakdown, Collector to Emitter	450 V
Voltage, Collector to Emitter	450 V
Voltage, Collector to Emitter, Saturation	1.5 V
Voltage, Saturation, Base to Emitter	1.5 V
Width	0.173" (4.4mm)
关键词

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