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NTE2321 - 

QUAD TRANSISTOR NPN SILICON 60V IC=0.5A14-LEAD DIP

NTE Electronics, Inc. NTE2321
声明：图片仅供参考，请以实物为准！
制造商产品编号：
NTE2321
仓库库存编号：
70214890
技术数据表：
View NTE2321 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！
  英国8号仓库    仓库直销，订单金额100元起订，满300元含运，满500元含税运，有单就有优惠，量大更优惠，支持原厂订货
型号 制造商 描述 实时库存 起订量 实时单价
(含税)		 货期
(工作日)		 操作
NTE2321 NTE Electronics Inc 0.5 A, 40 V, 4 CHANNEL, NPN, SI, POWER TRANSISTOR5
1起订		1+
2+
4+
￥209.67
￥174.73
￥153.76
1-3周购买 购买
,"cvcgetWeb":["c3JjPTI0JlBOPQ=="],"cvcModel":["NTE2321"],"cvcBrand":[" NTE Electronics Inc "],"cvcNumberAll":["1,2,4,"],"cvcPriceAll":["209.67,174.73,153.76,"],"maxnum":["5"],"minnum":["1"],"mytime":["1-3周"],"haveiscanbuy":["yes"],
NTE2321 NTE Electronics Inc 0.5 A, 40 V, 4 CHANNEL, NPN, SI, POWER TRANSISTOR3
1起订		1+
2+
4+
￥262.42
￥174.95
￥131.21
1-3周购买 购买
,"cvcgetWeb":["c3JjPTI0JlBOPQ=="],"cvcModel":["NTE2321"],"cvcBrand":[" NTE Electronics Inc "],"cvcNumberAll":["1,2,4,"],"cvcPriceAll":["262.42,174.95,131.21,"],"maxnum":["3"],"minnum":["1"],"mytime":["1-3周"],"haveiscanbuy":["yes"],

NTE2321产品概述

Silicon NPN Transistors

NTE2321产品信息

  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  500 mA  
  Current, Continuous Collector  500 mA  
  Current, Gain  30  
  Device Dissipation  0.65 W  
  Dimensions  19.95 x 7.62 x 5.08 mm  
  Frequency, Operating  350 MHz  
  Gain, DC Current, Minimum  30  
  Height  0.2" (5.08mm)  
  Length  0.785" (19.95mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  14  
  Package Type  DIP-14  
  Polarity  NPN  
  Power Dissipation  1.9 W  
  Primary Type  Si  
  Temperature Range, Junction, Operating  -65 to +200 °C  
  Temperature, Operating, Maximum  +200 °C  
  Temperature, Operating, Minimum  -65 °C  
  Temperature, Operating, Range  -65 to +200 °C  
  Transistor Polarity  NPN  
  Transistor Type  NPN  
  Type  General Purpose, Quad  
  Voltage, Breakdown, Collector to Emitter  40 V  
  Voltage, Collector to Base  60 V  
  Voltage, Collector to Emitter  30 V  
  Voltage, Collector to Emitter, Saturation  1.6 V  
  Voltage, Emitter to Base  5 V  
  Width  0.3" (7.62mm)  
关键词         

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Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 500 mA  NTE Electronics, Inc. Current, Collector 500 mA  Bipolar Transistors Current, Collector 500 mA  NTE Electronics, Inc. Bipolar Transistors Current, Collector 500 mA   Current, Continuous Collector 500 mA  NTE Electronics, Inc. Current, Continuous Collector 500 mA  Bipolar Transistors Current, Continuous Collector 500 mA  NTE Electronics, Inc. Bipolar Transistors Current, Continuous Collector 500 mA   Current, Gain 30  NTE Electronics, Inc. Current, Gain 30  Bipolar Transistors Current, Gain 30  NTE Electronics, Inc. Bipolar Transistors Current, Gain 30   Device Dissipation 0.65 W  NTE Electronics, Inc. Device Dissipation 0.65 W  Bipolar Transistors Device Dissipation 0.65 W  NTE Electronics, Inc. Bipolar Transistors Device Dissipation 0.65 W   Dimensions 19.95 x 7.62 x 5.08 mm  NTE Electronics, Inc. Dimensions 19.95 x 7.62 x 5.08 mm  Bipolar Transistors Dimensions 19.95 x 7.62 x 5.08 mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 19.95 x 7.62 x 5.08 mm   Frequency, Operating 350 MHz  NTE Electronics, Inc. Frequency, Operating 350 MHz  Bipolar Transistors Frequency, Operating 350 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 350 MHz   Gain, DC Current, Minimum 30  NTE Electronics, Inc. Gain, DC Current, Minimum 30  Bipolar Transistors Gain, DC Current, Minimum 30  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 30   Height 0.2" (5.08mm)  NTE Electronics, Inc. Height 0.2" (5.08mm)  Bipolar Transistors Height 0.2" (5.08mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.2" (5.08mm)   Length 0.785" (19.95mm)  NTE Electronics, Inc. Length 0.785" (19.95mm)  Bipolar Transistors Length 0.785" (19.95mm)  NTE Electronics, Inc. Bipolar Transistors Length 0.785" (19.95mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 14  NTE Electronics, Inc. Number of Pins 14  Bipolar Transistors Number of Pins 14  NTE Electronics, Inc. Bipolar Transistors Number of Pins 14   Package Type DIP-14  NTE Electronics, Inc. Package Type DIP-14  Bipolar Transistors Package Type DIP-14  NTE Electronics, Inc. Bipolar Transistors Package Type DIP-14   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 1.9 W  NTE Electronics, Inc. Power Dissipation 1.9 W  Bipolar Transistors Power Dissipation 1.9 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 1.9 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Temperature Range, Junction, Operating -65 to +200 °C  NTE Electronics, Inc. Temperature Range, Junction, Operating -65 to +200 °C  Bipolar Transistors Temperature Range, Junction, Operating -65 to +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature Range, Junction, Operating -65 to +200 °C   Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +200 °C  Bipolar Transistors Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +200 °C   Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Temperature, Operating, Range -65 to +200 °C  Bipolar Transistors Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -65 to +200 °C   Transistor Polarity NPN  NTE Electronics, Inc. Transistor Polarity NPN  Bipolar Transistors Transistor Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Polarity NPN   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type General Purpose, Quad  NTE Electronics, Inc. Type General Purpose, Quad  Bipolar Transistors Type General Purpose, Quad  NTE Electronics, Inc. Bipolar Transistors Type General Purpose, Quad   Voltage, Breakdown, Collector to Emitter 40 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 40 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 40 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 40 V   Voltage, Collector to Base 60 V  NTE Electronics, Inc. Voltage, Collector to Base 60 V  Bipolar Transistors Voltage, Collector to Base 60 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 60 V   Voltage, Collector to Emitter 30 V  NTE Electronics, Inc. Voltage, Collector to Emitter 30 V  Bipolar Transistors Voltage, Collector to Emitter 30 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 30 V   Voltage, Collector to Emitter, Saturation 1.6 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 1.6 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 1.6 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 1.6 V   Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Voltage, Emitter to Base 5 V  Bipolar Transistors Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 5 V   Width 0.3" (7.62mm)  NTE Electronics, Inc. Width 0.3" (7.62mm)  Bipolar Transistors Width 0.3" (7.62mm)  NTE Electronics, Inc. Bipolar Transistors Width 0.3" (7.62mm)  
参考价格及参考库存
  日本1号仓库    仓库直销，订单金额100元起订，满300元含运，满500元含税运，有单就有优惠，量大更优惠，支持原厂订货
型号 制造商 描述 操作
NTE2321
[更多]		 NTE Electronics Inc

Bipolar transistor

RoHS: Not Compliant | pbFree: No

搜索
  美国4号仓库    仓库直销，订单金额100元起订，满300元含运，满500元含税运，有单就有优惠，量大更优惠，支持原厂订货
型号 制造商 描述 操作
NTE2321
[更多]		 NTE Electronics Inc

Trans GP BJT NPN 30V 0.5A 14-Pin DIP

RoHS: Compliant

搜索
  美国5号仓库    仓库直销，订单金额100元起订，满300元含运，满500元含税运，有单就有优惠，量大更优惠，支持原厂订货
型号 制造商 描述 操作
NTE2321
[更多]		 NTE Electronics Inc  

搜索
  英国2号仓库    仓库直销，订单金额100元起订，满300元含运，满500元含税运，有单就有优惠，量大更优惠，支持原厂订货
型号 制造商 描述 操作
NTE2321
[更多]		 NTE Electronics Inc

QUAD TRANSISTOR NPN SILICON 60V IC=0.5A14-LEAD DIP

RoHS: Not Compliant

搜索
查看资料
  日本5号仓库    仓库直销，订单金额100元起订，满300元含运，满500元含税运，有单就有优惠，量大更优惠，支持原厂订货
型号 制造商 描述 操作
NTE2321
[更多]		 NTE Electronics Inc

Transistor Housing type: DIL-14 Polarity: NPN Amplification: 100 ... Amplification min.: 100 Collector-emitter voltage: 30 V Power dissipation: 1.9 W Transit frequency: 200 MHz

搜索
查看资料
  英国8号仓库    仓库直销，订单金额100元起订，满300元含运，满500元含税运，有单就有优惠，量大更优惠，支持原厂订货
型号 制造商 描述 操作
NTE2321
[更多]		 NTE Electronics Inc

0.5 A, 40 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR

搜索
  www.szcwdz.com    查看更多相关产品
参考图片 型号/品牌 描述 / 技术参考 操作
无图NTE2321
NTE Electronics		ER - Transistor; DIP; NPN; 30 V; 60 V; 5 V; 500 mA; 0.65 W; -65 to 200 degC
暂无PDF 		查价格库存
查看详细
  英国2号仓库    查看更多相关产品
参考图片 制造商 / 说明 / 型号 / 仓库库存编号 PDF 操作

NTE Electronics, Inc. - NTE2321 - QUAD TRANSISTOR NPN SILICON 60V IC=0.5A14-LEAD DIP|70214890 | ChuangWei Electronics		NTE Electronics, Inc.
QUAD TRANSISTOR NPN SILICON 60V IC=0.5A14-LEAD DIP

型号：NTE2321
仓库库存编号：70214890

搜索
  日本5号仓库    查看更多相关产品
参考图片 制造商 / 说明 / 型号 / 仓库库存编号 PDF 操作

NTE - NTE2321 - Transistor DIL-14 NPN 30 V 500 mA, NTE2321, NTE		NTE
Transistor DIL-14 NPN 30 V 500 mA, NTE2321, NTE

型号：NTE2321
仓库库存编号：171-03-020

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