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NTE2324 - 

TRANSISTOR NPN SILICON 1500V IC=8A TO-3PML CASE TF=0.1US HIGH VOLTAGE SWITCH

NTE Electronics, Inc. NTE2324
声明：图片仅供参考，请以实物为准！
制造商产品编号：
NTE2324
仓库库存编号：
70215350
技术数据表：
View NTE2324 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

NTE2324产品概述

One Watt High Voltage Transistor, TO-92, PNP, 1.0 W, -55 to +150°C Operating Temperature

NTE2324产品信息

  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  8 A  
  Current, Gain  5  
  Device Dissipation  70 W  
  Dimensions  16.0 x 5.6 x 22.0 mm  
  Gain, DC Current, Maximum  10  
  Gain, DC Current, Minimum  5  
  Height  0.866" (22mm)  
  Length  0.629" (16mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-3PML  
  Polarity  NPN  
  Power Dissipation  70 W  
  Primary Type  Si  
  Temperature, Junction, Operating  0 to +150 °C  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Range  Maximum of +150 °C  
  Transistor Polarity  NPN  
  Transistor Type  NPN  
  Type  High Voltage  
  Voltage, Breakdown, Collector to Emitter  800 V  
  Voltage, Collector to Base  1500 V  
  Voltage, Collector to Emitter  800 V  
  Voltage, Collector to Emitter, Saturation  5 V  
  Voltage, Emitter to Base  6 V  
  Voltage, Saturation, Base to Emitter  1.5 V  
  Width  0.22" (5.6mm)  
关键词         

NTE2324相关搜索

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5.6 x 22.0 mm  Bipolar Transistors Dimensions 16.0 x 5.6 x 22.0 mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 16.0 x 5.6 x 22.0 mm   Gain, DC Current, Maximum 10  NTE Electronics, Inc. Gain, DC Current, Maximum 10  Bipolar Transistors Gain, DC Current, Maximum 10  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Maximum 10   Gain, DC Current, Minimum 5  NTE Electronics, Inc. Gain, DC Current, Minimum 5  Bipolar Transistors Gain, DC Current, Minimum 5  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 5   Height 0.866" (22mm)  NTE Electronics, Inc. Height 0.866" (22mm)  Bipolar Transistors Height 0.866" (22mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.866" (22mm)   Length 0.629" (16mm)  NTE Electronics, Inc. Length 0.629" (16mm)  Bipolar Transistors Length 0.629" (16mm)  NTE Electronics, Inc. Bipolar Transistors Length 0.629" (16mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-3PML  NTE Electronics, Inc. Package Type TO-3PML  Bipolar Transistors Package Type TO-3PML  NTE Electronics, Inc. Bipolar Transistors Package Type TO-3PML   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 70 W  NTE Electronics, Inc. Power Dissipation 70 W  Bipolar Transistors Power Dissipation 70 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 70 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Temperature, Junction, Operating 0 to +150 °C  NTE Electronics, Inc. Temperature, Junction, Operating 0 to +150 °C  Bipolar Transistors Temperature, Junction, Operating 0 to +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Junction, Operating 0 to +150 °C   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Range Maximum of +150 °C  NTE Electronics, Inc. Temperature, Operating, Range Maximum of +150 °C  Bipolar Transistors Temperature, Operating, Range Maximum of +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range Maximum of +150 °C   Transistor Polarity NPN  NTE Electronics, Inc. Transistor Polarity NPN  Bipolar Transistors Transistor Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Polarity NPN   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type High Voltage  NTE Electronics, Inc. Type High Voltage  Bipolar Transistors Type High Voltage  NTE Electronics, Inc. Bipolar Transistors Type High Voltage   Voltage, Breakdown, Collector to Emitter 800 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 800 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 800 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 800 V   Voltage, Collector to Base 1500 V  NTE Electronics, Inc. Voltage, Collector to Base 1500 V  Bipolar Transistors Voltage, Collector to Base 1500 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 1500 V   Voltage, Collector to Emitter 800 V  NTE Electronics, Inc. Voltage, Collector to Emitter 800 V  Bipolar Transistors Voltage, Collector to Emitter 800 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 800 V   Voltage, Collector to Emitter, Saturation 5 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 5 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 5 V   Voltage, Emitter to Base 6 V  NTE Electronics, Inc. Voltage, Emitter to Base 6 V  Bipolar Transistors Voltage, Emitter to Base 6 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 6 V   Voltage, Saturation, Base to Emitter 1.5 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 1.5 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 1.5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 1.5 V   Width 0.22" (5.6mm)  NTE Electronics, Inc. Width 0.22" (5.6mm)  Bipolar Transistors Width 0.22" (5.6mm)  NTE Electronics, Inc. Bipolar Transistors Width 0.22" (5.6mm)  
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