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NTE2328 - 

TRANSISTOR NPN SILICON 200V IC=15A AUDIO POWER OUTPUT COMPLEMENT TO NTE2329

NTE Electronics, Inc. NTE2328
声明:图片仅供参考,请以实物为准!
制造商产品编号:
NTE2328
仓库库存编号:
70215933
技术数据表:
View NTE2328 Datasheet Datasheet
订购热线: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!

NTE2328产品概述

NPN Silicon Complementary Transistors Audio Power Output, Collector-Base Voltage 200 V
  • Recommended for 100W high fidelity audio frequency amplifier output stage
  • NTE2328产品信息

      Brand/Series  Transistor Series  
      Configuration  Common Base  
      Current, Collector  15 A  
      Current, Gain  35  
      Dimensions  20.57 x 5.2 x 26.16 mm  
      Frequency, Operating  25 MHz  
      Gain, DC Current, Maximum  160  
      Gain, DC Current, Minimum  55  
      Height  1.03" (26.16mm)  
      Length  0.809" (20.57mm)  
      Material  Si  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Package Type  TO-3PBL  
      Polarity  NPN  
      Power Dissipation  150 W  
      Primary Type  Si  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Range  Maximum of +150 °C  
      Transistor Type  NPN  
      Type  Audio Amplifier, Power  
      Voltage, Breakdown, Collector to Emitter  200 V  
      Voltage, Collector to Base  200 V  
      Voltage, Collector to Emitter  200 V  
      Voltage, Collector to Emitter, Saturation  3 V  
      Voltage, Emitter to Base  5 V  
      Voltage, Saturation, Collector to Emitter  1.5 V (Typ.)  
      Width  0.205" (5.2mm)  
    关键词         

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    Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 15 A  NTE Electronics, Inc. Current, Collector 15 A  Bipolar Transistors Current, Collector 15 A  NTE Electronics, Inc. Bipolar Transistors Current, Collector 15 A   Current, Gain 35  NTE Electronics, Inc. Current, Gain 35  Bipolar Transistors Current, Gain 35  NTE Electronics, Inc. Bipolar Transistors Current, Gain 35   Dimensions 20.57 x 5.2 x 26.16 mm  NTE Electronics, Inc. Dimensions 20.57 x 5.2 x 26.16 mm  Bipolar Transistors Dimensions 20.57 x 5.2 x 26.16 mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 20.57 x 5.2 x 26.16 mm   Frequency, Operating 25 MHz  NTE Electronics, Inc. Frequency, Operating 25 MHz  Bipolar Transistors Frequency, Operating 25 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 25 MHz   Gain, DC Current, Maximum 160  NTE Electronics, Inc. Gain, DC Current, Maximum 160  Bipolar Transistors Gain, DC Current, Maximum 160  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Maximum 160   Gain, DC Current, Minimum 55  NTE Electronics, Inc. Gain, DC Current, Minimum 55  Bipolar Transistors Gain, DC Current, Minimum 55  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 55   Height 1.03" (26.16mm)  NTE Electronics, Inc. Height 1.03" (26.16mm)  Bipolar Transistors Height 1.03" (26.16mm)  NTE Electronics, Inc. Bipolar Transistors Height 1.03" (26.16mm)   Length 0.809" (20.57mm)  NTE Electronics, Inc. Length 0.809" (20.57mm)  Bipolar Transistors Length 0.809" (20.57mm)  NTE Electronics, Inc. Bipolar Transistors Length 0.809" (20.57mm)   Material Si  NTE Electronics, 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Dissipation 150 W  NTE Electronics, Inc. Power Dissipation 150 W  Bipolar Transistors Power Dissipation 150 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 150 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Range Maximum of +150 °C  NTE Electronics, Inc. Temperature, Operating, Range Maximum of +150 °C  Bipolar Transistors Temperature, Operating, Range Maximum of +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range Maximum of +150 °C   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar 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Saturation 3 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 3 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 3 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 3 V   Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Voltage, Emitter to Base 5 V  Bipolar Transistors Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 5 V   Voltage, Saturation, Collector to Emitter 1.5 V (Typ.)  NTE Electronics, Inc. Voltage, Saturation, Collector to Emitter 1.5 V (Typ.)  Bipolar Transistors Voltage, Saturation, Collector to Emitter 1.5 V (Typ.)  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Collector to Emitter 1.5 V (Typ.)   Width 0.205" (5.2mm)  NTE Electronics, Inc. Width 0.205" (5.2mm)  Bipolar Transistors Width 0.205" (5.2mm)  NTE Electronics, Inc. Bipolar Transistors Width 0.205" (5.2mm)  
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