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NTE2347 - 

TRANSISTOR NPN SILICON 150V IC=5A TO-39CASE

NTE Electronics, Inc. NTE2347
声明：图片仅供参考，请以实物为准！
制造商产品编号：
NTE2347
仓库库存编号：
70214726
技术数据表：
View NTE2347 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

NTE2347产品信息

  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  5 A  
  Current, Gain  15  
  Diameter  9.39 mm  
  Dimensions  9.39 Dia. x 6.6 H mm  
  Frequency, Operating  50 MHz  
  Height  0.26" (6.6mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-39  
  Polarity  NPN  
  Power Dissipation  7 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  25 °C/W  
  Temperature, Operating, Maximum  +200 °C  
  Temperature, Operating, Minimum  -65 °C  
  Temperature, Operating, Range  -65 to +200 °C  
  Transistor Type  NPN  
  Type  General Purpose, Power  
  Voltage, Breakdown, Collector to Emitter  80 V  
  Voltage, Collector to Base  150 V  
  Voltage, Collector to Emitter  80 V  
  Voltage, Collector to Emitter, Saturation  1 V  
  Voltage, Emitter to Base  6 V  
  Voltage, Saturation, Base to Emitter  1.6 V  
关键词         

NTE2347相关搜索

Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 5 A  NTE Electronics, Inc. Current, Collector 5 A  Bipolar Transistors Current, Collector 5 A  NTE Electronics, Inc. Bipolar Transistors Current, Collector 5 A   Current, Gain 15  NTE Electronics, Inc. Current, Gain 15  Bipolar Transistors Current, Gain 15  NTE Electronics, Inc. Bipolar Transistors Current, Gain 15   Diameter 9.39 mm  NTE Electronics, Inc. Diameter 9.39 mm  Bipolar Transistors Diameter 9.39 mm  NTE Electronics, Inc. Bipolar Transistors Diameter 9.39 mm   Dimensions 9.39 Dia. x 6.6 H mm  NTE Electronics, Inc. Dimensions 9.39 Dia. x 6.6 H mm  Bipolar Transistors Dimensions 9.39 Dia. x 6.6 H mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 9.39 Dia. x 6.6 H mm   Frequency, Operating 50 MHz  NTE Electronics, Inc. Frequency, Operating 50 MHz  Bipolar Transistors Frequency, Operating 50 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 50 MHz   Height 0.26" (6.6mm)  NTE Electronics, Inc. Height 0.26" (6.6mm)  Bipolar Transistors Height 0.26" (6.6mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.26" (6.6mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-39  NTE Electronics, Inc. Package Type TO-39  Bipolar Transistors Package Type TO-39  NTE Electronics, Inc. Bipolar Transistors Package Type TO-39   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 7 W  NTE Electronics, Inc. Power Dissipation 7 W  Bipolar Transistors Power Dissipation 7 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 7 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 25 °C/W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 25 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 25 °C/W  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Case 25 °C/W   Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +200 °C  Bipolar Transistors Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +200 °C   Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Temperature, Operating, Range -65 to +200 °C  Bipolar Transistors Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -65 to +200 °C   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type General Purpose, Power  NTE Electronics, Inc. Type General Purpose, Power  Bipolar Transistors Type General Purpose, Power  NTE Electronics, Inc. Bipolar Transistors Type General Purpose, Power   Voltage, Breakdown, Collector to Emitter 80 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 80 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 80 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 80 V   Voltage, Collector to Base 150 V  NTE Electronics, Inc. Voltage, Collector to Base 150 V  Bipolar Transistors Voltage, Collector to Base 150 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 150 V   Voltage, Collector to Emitter 80 V  NTE Electronics, Inc. Voltage, Collector to Emitter 80 V  Bipolar Transistors Voltage, Collector to Emitter 80 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 80 V   Voltage, Collector to Emitter, Saturation 1 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 1 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 1 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 1 V   Voltage, Emitter to Base 6 V  NTE Electronics, Inc. Voltage, Emitter to Base 6 V  Bipolar Transistors Voltage, Emitter to Base 6 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 6 V   Voltage, Saturation, Base to Emitter 1.6 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 1.6 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 1.6 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 1.6 V  
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