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Silicon Complementary Darlington Transistor, 50 A Collector Current
Designed for use as output devices in general purpose amplifier applications.

Brand/Series	Transistor Series
Configuration	Common Base
Current, Collector	50 A
Current, Gain	400
Current, Output	50 A
Current, Output, Leakage	2 mA
Diameter	22.2 mm
Dimensions	22.2 Dia. x 8.89 H mm
Gain, DC Current, Maximum	18000
Gain, DC Current, Minimum	400
Height	0.35" (8.89mm)
Input Voltage	5 V
Material	Si
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	3
Package Type	TO-3
Polarity	PNP
Power Dissipation	300 W
Primary Type	Si
Resistance, Thermal, Junction to Case	0.584 °C
Temperature, Operating, Maximum	+200 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	Maximum of +200 °C
Transistor Type	PNP
Type	Amplifier, High Current
Voltage, Collector to Base	120 V
Voltage, Collector to Emitter	120 V
Voltage, Collector to Emitter, Saturation	3.5 V
Voltage, Emitter to Base	5 V
Voltage, Output	120 V
Voltage, Saturation, Base to Emitter	4.5 V
Voltage, Saturation, Collector to Emitter	2.5 V
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• Amphenol Industrial
  connector comp, shell only, metal circular, str plug, solid bkshl, size 18, black fin
  
  型号：97-3106A-18(621)(0850)
  仓库库存编号：70141217
  
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• Amphenol Industrial
  connector comp, shell only, metal circular, str plug, solid bkshl, size 24, black fin
  
  型号：97-3106A-24(621)(0850)
  仓库库存编号：70141220
  
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• Amphenol RF
  connector, rf coaxial, twin bnc str clampplug, 1m&1f cont, polarized, rg108a cable
  
  型号：031-224
  仓库库存编号：70142601
  
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• NTE Electronics, Inc.
  TRANSISTOR NPN SILICON DARLINGTON 120V IC=50A TO-3 CASE COMPLEMENT TO NTE2350
  
  型号：NTE2349
  仓库库存编号：70215991
  
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Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 50 A  NTE Electronics, Inc. Current, Collector 50 A  Bipolar Transistors Current, Collector 50 A  NTE Electronics, Inc. Bipolar Transistors Current, Collector 50 A   Current, Gain 400  NTE Electronics, Inc. Current, Gain 400  Bipolar Transistors Current, Gain 400  NTE Electronics, Inc. Bipolar Transistors Current, Gain 400   Current, Output 50 A  NTE Electronics, Inc. Current, Output 50 A  Bipolar Transistors Current, Output 50 A  NTE Electronics, Inc. Bipolar Transistors Current, Output 50 A   Current, Output, Leakage 2 mA  NTE Electronics, Inc. Current, Output, Leakage 2 mA  Bipolar Transistors Current, Output, Leakage 2 mA  NTE Electronics, Inc. Bipolar Transistors Current, Output, Leakage 2 mA   Diameter 22.2 mm  NTE Electronics, Inc. Diameter 22.2 mm  Bipolar Transistors Diameter 22.2 mm  NTE Electronics, Inc. Bipolar Transistors Diameter 22.2 mm   Dimensions 22.2 Dia. x 8.89 H mm  NTE Electronics, Inc. Dimensions 22.2 Dia. x 8.89 H mm  Bipolar Transistors Dimensions 22.2 Dia. x 8.89 H mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 22.2 Dia. x 8.89 H mm   Gain, DC Current, Maximum 18000  NTE Electronics, Inc. Gain, DC Current, Maximum 18000  Bipolar Transistors Gain, DC Current, Maximum 18000  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Maximum 18000   Gain, DC Current, Minimum 400  NTE Electronics, Inc. Gain, DC Current, Minimum 400  Bipolar Transistors Gain, DC Current, Minimum 400  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 400   Height 0.35" (8.89mm)  NTE Electronics, Inc. Height 0.35" (8.89mm)  Bipolar Transistors Height 0.35" (8.89mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.35" (8.89mm)   Input Voltage 5 V  NTE Electronics, Inc. Input Voltage 5 V  Bipolar Transistors Input Voltage 5 V  NTE Electronics, Inc. Bipolar Transistors Input Voltage 5 V   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-3  NTE Electronics, Inc. Package Type TO-3  Bipolar Transistors Package Type TO-3  NTE Electronics, Inc. Bipolar Transistors Package Type TO-3   Polarity PNP  NTE Electronics, Inc. Polarity PNP  Bipolar Transistors Polarity PNP  NTE Electronics, Inc. Bipolar Transistors Polarity PNP   Power Dissipation 300 W  NTE Electronics, Inc. Power Dissipation 300 W  Bipolar Transistors Power Dissipation 300 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 300 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 0.584 °C  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 0.584 °C  Bipolar Transistors Resistance, Thermal, Junction to Case 0.584 °C  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Case 0.584 °C   Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +200 °C  Bipolar Transistors Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +200 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  Bipolar Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range Maximum of +200 °C  NTE Electronics, Inc. Temperature, Operating, Range Maximum of +200 °C  Bipolar Transistors Temperature, Operating, Range Maximum of +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range Maximum of +200 °C   Transistor Type PNP  NTE Electronics, Inc. Transistor Type PNP  Bipolar Transistors Transistor Type PNP  NTE Electronics, Inc. Bipolar Transistors Transistor Type PNP   Type Amplifier, High Current  NTE Electronics, Inc. Type Amplifier, High Current  Bipolar Transistors Type Amplifier, High Current  NTE Electronics, Inc. Bipolar Transistors Type Amplifier, High Current   Voltage, Collector to Base 120 V  NTE Electronics, Inc. Voltage, Collector to Base 120 V  Bipolar Transistors Voltage, Collector to Base 120 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 120 V   Voltage, Collector to Emitter 120 V  NTE Electronics, Inc. Voltage, Collector to Emitter 120 V  Bipolar Transistors Voltage, Collector to Emitter 120 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 120 V   Voltage, Collector to Emitter, Saturation 3.5 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 3.5 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 3.5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 3.5 V   Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Voltage, Emitter to Base 5 V  Bipolar Transistors Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 5 V   Voltage, Output 120 V  NTE Electronics, Inc. Voltage, Output 120 V  Bipolar Transistors Voltage, Output 120 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Output 120 V   Voltage, Saturation, Base to Emitter 4.5 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 4.5 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 4.5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 4.5 V   Voltage, Saturation, Collector to Emitter 2.5 V  NTE Electronics, Inc. Voltage, Saturation, Collector to Emitter 2.5 V  Bipolar Transistors Voltage, Saturation, Collector to Emitter 2.5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Collector to Emitter 2.5 V