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Features:

Dynamic dv/dt Rating

Repetitive Avalanche Rated

P-Channel

Fast Switching

Ease of Paralleling

Simple Drive Requirements

Brand/Series	MOSFET Series
Capacitance, Input	1400 pF
Channel Mode	Enhancement
Channel Type	P
Configuration	Single
Current, Drain	19 A
Height	0.5" (12.7mm)
Length	0.42" (10.67mm)
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	3
Package Type	TO-220
Power Dissipation	150 W
Resistance, Drain to Source On	0.2 Ω
Temperature, Operating, Maximum	+175 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +175 °C
Time, Turn-Off Delay	34 ns
Time, Turn-On Delay	16 ns
Transconductance, Forward	6.2 mhos
Typical Gate Charge @ Vgs	61 nC
Voltage, Drain to Source	100 V
Voltage, Forward, Diode	5 V
Voltage, Gate to Source	±20 V
关键词

Brand/Series MOSFET Series  NTE Electronics, Inc. Brand/Series MOSFET Series  MOSFET Transistors Brand/Series MOSFET Series  NTE Electronics, Inc. MOSFET Transistors Brand/Series MOSFET Series   Capacitance, Input 1400 pF  NTE Electronics, Inc. Capacitance, Input 1400 pF  MOSFET Transistors Capacitance, Input 1400 pF  NTE Electronics, Inc. MOSFET Transistors Capacitance, Input 1400 pF   Channel Mode Enhancement  NTE Electronics, Inc. Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  NTE Electronics, Inc. MOSFET Transistors Channel Mode Enhancement   Channel Type P  NTE Electronics, Inc. Channel Type P  MOSFET Transistors Channel Type P  NTE Electronics, Inc. MOSFET Transistors Channel Type P   Configuration Single  NTE Electronics, Inc. Configuration Single  MOSFET Transistors Configuration Single  NTE Electronics, Inc. MOSFET Transistors Configuration Single   Current, Drain 19 A  NTE Electronics, Inc. Current, Drain 19 A  MOSFET Transistors Current, Drain 19 A  NTE Electronics, Inc. MOSFET Transistors Current, Drain 19 A   Height 0.5" (12.7mm)  NTE Electronics, Inc. Height 0.5" (12.7mm)  MOSFET Transistors Height 0.5" (12.7mm)  NTE Electronics, Inc. MOSFET Transistors Height 0.5" (12.7mm)   Length 0.42" (10.67mm)  NTE Electronics, Inc. Length 0.42" (10.67mm)  MOSFET Transistors Length 0.42" (10.67mm)  NTE Electronics, Inc. MOSFET Transistors Length 0.42" (10.67mm)   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  NTE Electronics, Inc. MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  NTE Electronics, Inc. MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  MOSFET Transistors Number of Pins 3  NTE Electronics, Inc. MOSFET Transistors Number of Pins 3   Package Type TO-220  NTE Electronics, Inc. Package Type TO-220  MOSFET Transistors Package Type TO-220  NTE Electronics, Inc. MOSFET Transistors Package Type TO-220   Power Dissipation 150 W  NTE Electronics, Inc. Power Dissipation 150 W  MOSFET Transistors Power Dissipation 150 W  NTE Electronics, Inc. MOSFET Transistors Power Dissipation 150 W   Resistance, Drain to Source On 0.2 Ω  NTE Electronics, Inc. Resistance, Drain to Source On 0.2 Ω  MOSFET Transistors Resistance, Drain to Source On 0.2 Ω  NTE Electronics, Inc. MOSFET Transistors Resistance, Drain to Source On 0.2 Ω   Temperature, Operating, Maximum +175 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +175 °C  NTE Electronics, Inc. Temperature, Operating, Range -55 to +175 °C  MOSFET Transistors Temperature, Operating, Range -55 to +175 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Range -55 to +175 °C   Time, Turn-Off Delay 34 ns  NTE Electronics, Inc. Time, Turn-Off Delay 34 ns  MOSFET Transistors Time, Turn-Off Delay 34 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-Off Delay 34 ns   Time, Turn-On Delay 16 ns  NTE Electronics, Inc. Time, Turn-On Delay 16 ns  MOSFET Transistors Time, Turn-On Delay 16 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-On Delay 16 ns   Transconductance, Forward 6.2 mhos  NTE Electronics, Inc. Transconductance, Forward 6.2 mhos  MOSFET Transistors Transconductance, Forward 6.2 mhos  NTE Electronics, Inc. MOSFET Transistors Transconductance, Forward 6.2 mhos   Typical Gate Charge @ Vgs 61 nC  NTE Electronics, Inc. Typical Gate Charge @ Vgs 61 nC  MOSFET Transistors Typical Gate Charge @ Vgs 61 nC  NTE Electronics, Inc. MOSFET Transistors Typical Gate Charge @ Vgs 61 nC   Voltage, Drain to Source 100 V  NTE Electronics, Inc. Voltage, Drain to Source 100 V  MOSFET Transistors Voltage, Drain to Source 100 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Drain to Source 100 V   Voltage, Forward, Diode 5 V  NTE Electronics, Inc. Voltage, Forward, Diode 5 V  MOSFET Transistors Voltage, Forward, Diode 5 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Forward, Diode 5 V   Voltage, Gate to Source ±20 V  NTE Electronics, Inc. Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Gate to Source ±20 V