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NTE2379 - 

POWER MOSFET N-CHANNEL 600V ID=6.2A TO-220 CASE HIGH SPEED SWITCH ENHANCEMENT MO

NTE Electronics, Inc. NTE2379
声明：图片仅供参考，请以实物为准！
制造商产品编号：
NTE2379
仓库库存编号：
70214667
技术数据表：
View NTE2379 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

NTE2379产品概述

N-Channel MOSFET
  • Dynamic dv/dt rating
  • Repetitive avalanche rated
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements

    • NTE2379产品信息

      Brand/Series  MOSFET Series  
      Capacitance, Input  1300 pF @ 25 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  6.2 A  
      Fall Time  20 ns  
      Gate Charge, Total  60 nC  
      Height  0.61" (15.49mm)  
      Length  0.42" (10.67mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  -55 to +150 °C  
      Package Type  TO-220  
      Polarization  N-Channel  
      Power Dissipation  125 W  
      Resistance, Drain to Source On  1.2 Ω  
      Resistance, Thermal, Junction to Case  1 °C⁄W  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Thermal Resistance, Junction to Ambient  62 °C⁄W  
      Time, Turn-Off Delay  55 ns  
      Time, Turn-On Delay  32 ns  
      Transconductance, Forward  4.7 S  
      Typical Gate Charge @ Vgs  Maximum of 60 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  600 V  
      Voltage, Drain to Source  600 V  
      Voltage, Forward, Diode  1.5 V  
      Voltage, Gate to Source  ±20 V  
    关键词         

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    Brand/Series MOSFET Series  NTE Electronics, Inc. Brand/Series MOSFET Series  MOSFET Transistors Brand/Series MOSFET Series  NTE Electronics, Inc. MOSFET Transistors Brand/Series MOSFET Series   Capacitance, Input 1300 pF @ 25 V  NTE Electronics, Inc. Capacitance, Input 1300 pF @ 25 V  MOSFET Transistors Capacitance, Input 1300 pF @ 25 V  NTE Electronics, Inc. MOSFET Transistors Capacitance, Input 1300 pF @ 25 V   Channel Mode Enhancement  NTE Electronics, Inc. Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  NTE Electronics, Inc. MOSFET Transistors Channel Mode Enhancement   Channel Type N  NTE Electronics, Inc. Channel Type N  MOSFET Transistors Channel Type N  NTE Electronics, Inc. MOSFET Transistors Channel Type N   Configuration Single  NTE Electronics, Inc. Configuration Single  MOSFET Transistors Configuration Single  NTE Electronics, Inc. MOSFET Transistors Configuration Single   Current, Drain 6.2 A  NTE Electronics, Inc. Current, Drain 6.2 A  MOSFET 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Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  NTE Electronics, Inc. MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  MOSFET Transistors Number of Pins 3  NTE Electronics, Inc. MOSFET Transistors Number of Pins 3   Operating and Storage Temperature -55 to +150 °C  NTE Electronics, Inc. Operating and Storage Temperature -55 to +150 °C  MOSFET Transistors Operating and Storage Temperature -55 to +150 °C  NTE Electronics, Inc. MOSFET Transistors Operating and Storage Temperature -55 to +150 °C   Package Type TO-220  NTE Electronics, Inc. Package Type TO-220  MOSFET Transistors Package Type TO-220  NTE Electronics, Inc. MOSFET Transistors Package Type TO-220   Polarization N-Channel  NTE Electronics, Inc. Polarization N-Channel  MOSFET Transistors Polarization N-Channel  NTE Electronics, Inc. MOSFET Transistors Polarization N-Channel   Power Dissipation 125 W  NTE Electronics, Inc. Power Dissipation 125 W  MOSFET Transistors Power Dissipation 125 W  NTE Electronics, Inc. MOSFET Transistors Power Dissipation 125 W   Resistance, Drain to Source On 1.2 Ω  NTE Electronics, Inc. Resistance, Drain to Source On 1.2 Ω  MOSFET Transistors Resistance, Drain to Source On 1.2 Ω  NTE Electronics, Inc. MOSFET Transistors Resistance, Drain to Source On 1.2 Ω   Resistance, Thermal, Junction to Case 1 °C⁄W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 1 °C⁄W  MOSFET Transistors Resistance, Thermal, Junction to Case 1 °C⁄W  NTE Electronics, Inc. MOSFET Transistors Resistance, Thermal, Junction to Case 1 °C⁄W   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, 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Transistors Time, Turn-On Delay 32 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-On Delay 32 ns   Transconductance, Forward 4.7 S  NTE Electronics, Inc. Transconductance, Forward 4.7 S  MOSFET Transistors Transconductance, Forward 4.7 S  NTE Electronics, Inc. MOSFET Transistors Transconductance, Forward 4.7 S   Typical Gate Charge @ Vgs Maximum of 60 nC @ 10 V  NTE Electronics, Inc. Typical Gate Charge @ Vgs Maximum of 60 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 60 nC @ 10 V  NTE Electronics, Inc. MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 60 nC @ 10 V   Voltage, Breakdown, Drain to Source 600 V  NTE Electronics, Inc. Voltage, Breakdown, Drain to Source 600 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 600 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Breakdown, Drain to Source 600 V   Voltage, Drain to Source 600 V  NTE Electronics, Inc. Voltage, Drain to Source 600 V  MOSFET Transistors Voltage, Drain to Source 600 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Drain to Source 600 V   Voltage, Forward, Diode 1.5 V  NTE Electronics, Inc. Voltage, Forward, Diode 1.5 V  MOSFET Transistors Voltage, Forward, Diode 1.5 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Forward, Diode 1.5 V   Voltage, Gate to Source ±20 V  NTE Electronics, Inc. Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Gate to Source ±20 V  
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