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NTE2382 - 

POWER MOSFET N-CHANNEL 100V ID=8A TO-220 CASE HIGH SPEED SWITCH ENHANCEMENT MODE

NTE Electronics, Inc. NTE2382
声明：图片仅供参考，请以实物为准！
制造商产品编号：
NTE2382
仓库库存编号：
70215355
技术数据表：
View NTE2382 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

NTE2382产品概述

N Channel Enhancement Mode Switches

NTE2382产品信息

  Brand/Series  MOSFET Series  
  Capacitance, Input  400 pF @ 25 V  
  Channel Mode  Enhancement  
  Channel Type  N  
  Configuration  Single  
  Current, Drain  9.2 A  
  Gate Charge, Total  23 nC  
  Height  0.61" (15.49mm)  
  Length  0.42" (10.67mm)  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-220  
  Polarization  N-Channel  
  Power Dissipation  50 W  
  Resistance, Drain to Source On  0.27 Ω  
  Resistance, Thermal, Junction to Case  2.5 °C⁄W  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Time, Turn-Off Delay  19 ns  
  Time, Turn-On Delay  8.8 ns  
  Transconductance, Forward  4.1 S  
  Typical Gate Charge @ Vgs  Maximum of 23 nC @ 10 V  
  Voltage, Breakdown, Drain to Source  100 V  
  Voltage, Drain to Source  100 V  
  Voltage, Forward, Diode  2.5 V  
  Voltage, Gate to Source  ±20 V  
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Brand/Series MOSFET Series  NTE Electronics, Inc. Brand/Series MOSFET Series  MOSFET Transistors Brand/Series MOSFET Series  NTE Electronics, Inc. MOSFET Transistors Brand/Series MOSFET Series   Capacitance, Input 400 pF @ 25 V  NTE Electronics, Inc. Capacitance, Input 400 pF @ 25 V  MOSFET Transistors Capacitance, Input 400 pF @ 25 V  NTE Electronics, Inc. MOSFET Transistors Capacitance, Input 400 pF @ 25 V   Channel Mode Enhancement  NTE Electronics, Inc. Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  NTE Electronics, Inc. MOSFET Transistors Channel Mode Enhancement   Channel Type N  NTE Electronics, Inc. Channel Type N  MOSFET Transistors Channel Type N  NTE Electronics, Inc. MOSFET Transistors Channel Type N   Configuration Single  NTE Electronics, Inc. Configuration Single  MOSFET Transistors Configuration Single  NTE Electronics, Inc. MOSFET Transistors Configuration Single   Current, Drain 9.2 A  NTE Electronics, Inc. Current, Drain 9.2 A  MOSFET 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Time, Turn-Off Delay 19 ns  NTE Electronics, Inc. Time, Turn-Off Delay 19 ns  MOSFET Transistors Time, Turn-Off Delay 19 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-Off Delay 19 ns   Time, Turn-On Delay 8.8 ns  NTE Electronics, Inc. Time, Turn-On Delay 8.8 ns  MOSFET Transistors Time, Turn-On Delay 8.8 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-On Delay 8.8 ns   Transconductance, Forward 4.1 S  NTE Electronics, Inc. Transconductance, Forward 4.1 S  MOSFET Transistors Transconductance, Forward 4.1 S  NTE Electronics, Inc. MOSFET Transistors Transconductance, Forward 4.1 S   Typical Gate Charge @ Vgs Maximum of 23 nC @ 10 V  NTE Electronics, Inc. Typical Gate Charge @ Vgs Maximum of 23 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 23 nC @ 10 V  NTE Electronics, Inc. MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 23 nC @ 10 V   Voltage, Breakdown, Drain to Source 100 V  NTE Electronics, Inc. Voltage, Breakdown, Drain to Source 100 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 100 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Breakdown, Drain to Source 100 V   Voltage, Drain to Source 100 V  NTE Electronics, Inc. Voltage, Drain to Source 100 V  MOSFET Transistors Voltage, Drain to Source 100 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Drain to Source 100 V   Voltage, Forward, Diode 2.5 V  NTE Electronics, Inc. Voltage, Forward, Diode 2.5 V  MOSFET Transistors Voltage, Forward, Diode 2.5 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Forward, Diode 2.5 V   Voltage, Gate to Source ±20 V  NTE Electronics, Inc. Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Gate to Source ±20 V  
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