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NTE2383 - 

POOWER MOSFET P-CHANNEL 100V ID=8A TO-220 CASE HIGH SPEED SWITCH ENHANCEMENT MOD

NTE Electronics, Inc. NTE2383
声明：图片仅供参考，请以实物为准！
制造商产品编号：
NTE2383
仓库库存编号：
70215936
技术数据表：
View NTE2383 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

NTE2383产品概述

N Channel Enhancement Mode Switches

NTE2383产品信息

  Brand/Series  MOSFET Series  
  Capacitance, Input  835 pF @ 25 V  
  Channel Mode  Enhancement  
  Channel Type  P  
  Configuration  Single  
  Current, Drain  10.5 A  
  Gate Charge, Total  58 nC  
  Height  0.61" (15.49mm)  
  Length  0.42" (10.67mm)  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-220  
  Polarization  P-Channel  
  Power Dissipation  75 W  
  Resistance, Drain to Source On  0.3 Ω  
  Resistance, Thermal, Junction to Case  2.5 °C⁄W  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Time, Turn-Off Delay  Minimum of 140 ns  
  Time, Turn-On Delay  60 ns  
  Transconductance, Forward  2 S  
  Typical Gate Charge @ Vgs  Maximum of 58 nC @ 10 V  
  Voltage, Breakdown, Drain to Source  100 V  
  Voltage, Drain to Source  100 V  
  Voltage, Forward, Diode  6.3 V  
  Voltage, Gate to Source  ±20 V  
关键词         

NTE2383相关搜索

Brand/Series MOSFET Series  NTE Electronics, Inc. Brand/Series MOSFET Series  MOSFET Transistors Brand/Series MOSFET Series  NTE Electronics, Inc. MOSFET Transistors Brand/Series MOSFET Series   Capacitance, Input 835 pF @ 25 V  NTE Electronics, Inc. Capacitance, Input 835 pF @ 25 V  MOSFET Transistors Capacitance, Input 835 pF @ 25 V  NTE Electronics, Inc. MOSFET Transistors Capacitance, Input 835 pF @ 25 V   Channel Mode Enhancement  NTE Electronics, Inc. Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  NTE Electronics, Inc. MOSFET Transistors Channel Mode Enhancement   Channel Type P  NTE Electronics, Inc. Channel Type P  MOSFET Transistors Channel Type P  NTE Electronics, Inc. MOSFET Transistors Channel Type P   Configuration Single  NTE Electronics, Inc. Configuration Single  MOSFET Transistors Configuration Single  NTE Electronics, Inc. MOSFET Transistors Configuration Single   Current, Drain 10.5 A  NTE Electronics, Inc. Current, Drain 10.5 A  MOSFET Transistors Current, Drain 10.5 A  NTE Electronics, Inc. MOSFET Transistors Current, Drain 10.5 A   Gate Charge, Total 58 nC  NTE Electronics, Inc. Gate Charge, Total 58 nC  MOSFET Transistors Gate Charge, Total 58 nC  NTE Electronics, Inc. MOSFET Transistors Gate Charge, Total 58 nC   Height 0.61" (15.49mm)  NTE Electronics, Inc. Height 0.61" (15.49mm)  MOSFET Transistors Height 0.61" (15.49mm)  NTE Electronics, Inc. MOSFET Transistors Height 0.61" (15.49mm)   Length 0.42" (10.67mm)  NTE Electronics, Inc. Length 0.42" (10.67mm)  MOSFET Transistors Length 0.42" (10.67mm)  NTE Electronics, Inc. MOSFET Transistors Length 0.42" (10.67mm)   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  NTE Electronics, Inc. MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  NTE Electronics, Inc. MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  MOSFET Transistors Number of Pins 3  NTE Electronics, Inc. MOSFET Transistors Number of Pins 3   Package Type TO-220  NTE Electronics, Inc. Package Type TO-220  MOSFET Transistors Package Type TO-220  NTE Electronics, Inc. MOSFET Transistors Package Type TO-220   Polarization P-Channel  NTE Electronics, Inc. Polarization P-Channel  MOSFET Transistors Polarization P-Channel  NTE Electronics, Inc. MOSFET Transistors Polarization P-Channel   Power Dissipation 75 W  NTE Electronics, Inc. Power Dissipation 75 W  MOSFET Transistors Power Dissipation 75 W  NTE Electronics, Inc. MOSFET Transistors Power Dissipation 75 W   Resistance, Drain to Source On 0.3 Ω  NTE Electronics, Inc. Resistance, Drain to Source On 0.3 Ω  MOSFET Transistors Resistance, Drain to Source On 0.3 Ω  NTE Electronics, Inc. MOSFET Transistors Resistance, Drain to Source On 0.3 Ω   Resistance, Thermal, Junction to Case 2.5 °C⁄W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 2.5 °C⁄W  MOSFET Transistors Resistance, Thermal, Junction to Case 2.5 °C⁄W  NTE Electronics, Inc. MOSFET Transistors Resistance, Thermal, Junction to Case 2.5 °C⁄W   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay Minimum of 140 ns  NTE Electronics, Inc. Time, Turn-Off Delay Minimum of 140 ns  MOSFET Transistors Time, Turn-Off Delay Minimum of 140 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-Off Delay Minimum of 140 ns   Time, Turn-On Delay 60 ns  NTE Electronics, Inc. Time, Turn-On Delay 60 ns  MOSFET Transistors Time, Turn-On Delay 60 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-On Delay 60 ns   Transconductance, Forward 2 S  NTE Electronics, Inc. Transconductance, Forward 2 S  MOSFET Transistors Transconductance, Forward 2 S  NTE Electronics, Inc. MOSFET Transistors Transconductance, Forward 2 S   Typical Gate Charge @ Vgs Maximum of 58 nC @ 10 V  NTE Electronics, Inc. Typical Gate Charge @ Vgs Maximum of 58 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 58 nC @ 10 V  NTE Electronics, Inc. MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 58 nC @ 10 V   Voltage, Breakdown, Drain to Source 100 V  NTE Electronics, Inc. Voltage, Breakdown, Drain to Source 100 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 100 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Breakdown, Drain to Source 100 V   Voltage, Drain to Source 100 V  NTE Electronics, Inc. Voltage, Drain to Source 100 V  MOSFET Transistors Voltage, Drain to Source 100 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Drain to Source 100 V   Voltage, Forward, Diode 6.3 V  NTE Electronics, Inc. Voltage, Forward, Diode 6.3 V  MOSFET Transistors Voltage, Forward, Diode 6.3 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Forward, Diode 6.3 V   Voltage, Gate to Source ±20 V  NTE Electronics, Inc. Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Gate to Source ±20 V  
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