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NTE2387 - 

POWER MOSFET N-CHANNEL 800V ID=4A TO-220 CASE HIGH SPEED SWITCH ENHANCEMENT MODE

NTE Electronics, Inc. NTE2387
声明：图片仅供参考，请以实物为准！
制造商产品编号：
NTE2387
仓库库存编号：
70215150
技术数据表：
View NTE2387 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

NTE2387产品概述

N-Channel MOSFET Enhancement Mode High Speed Switch, -55 to +150°C

NTE2387产品信息

  Application  For high speed switch  
  Brand/Series  MOSFET Series  
  Capacitance, Input  1000 pF @ 25 V  
  Channel Mode  Enhancement  
  Channel Type  N  
  Configuration  Single  
  Current, Drain  4 A  
  Fall Time  40 ns (Typ.)  
  Height  0.61" (15.49mm)  
  Length  0.42" (10.67mm)  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Operating and Storage Temperature  -55 to +150 °C  
  Package Type  TO-220  
  Polarization  N-Channel  
  Power Dissipation  125 W  
  Resistance, Drain to Source On  3 Ω  
  Resistance, Thermal, Junction to Case  1 °C?W (Max.)  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Thermal Resistance, Junction to Ambient  60 °C⁄W  
  Time, Turn-Off Delay  130 ns  
  Time, Turn-On Delay  10 ns  
  Transconductance, Forward  4.3 S  
  Voltage, Breakdown, Drain to Source  800 V  
  Voltage, Drain to Source  800 V  
  Voltage, Forward, Diode  1 V  
  Voltage, Gate to Source  ±30 V  
关键词         

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NTE2387相关搜索

Application For high speed switch  NTE Electronics, Inc. Application For high speed switch  MOSFET Transistors Application For high speed switch  NTE Electronics, Inc. MOSFET Transistors Application For high speed switch   Brand/Series MOSFET Series  NTE Electronics, Inc. Brand/Series MOSFET Series  MOSFET Transistors Brand/Series MOSFET Series  NTE Electronics, Inc. MOSFET Transistors Brand/Series MOSFET Series   Capacitance, Input 1000 pF @ 25 V  NTE Electronics, Inc. Capacitance, Input 1000 pF @ 25 V  MOSFET Transistors Capacitance, Input 1000 pF @ 25 V  NTE Electronics, Inc. MOSFET Transistors Capacitance, Input 1000 pF @ 25 V   Channel Mode Enhancement  NTE Electronics, Inc. Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  NTE Electronics, Inc. MOSFET Transistors Channel Mode Enhancement   Channel Type N  NTE Electronics, Inc. Channel Type N  MOSFET Transistors Channel Type N  NTE Electronics, Inc. MOSFET Transistors Channel Type N   Configuration Single  NTE Electronics, Inc. Configuration Single  MOSFET Transistors Configuration Single  NTE Electronics, Inc. MOSFET Transistors Configuration Single   Current, Drain 4 A  NTE Electronics, Inc. Current, Drain 4 A  MOSFET Transistors Current, Drain 4 A  NTE Electronics, Inc. MOSFET Transistors Current, Drain 4 A   Fall Time 40 ns (Typ.)  NTE Electronics, Inc. Fall Time 40 ns (Typ.)  MOSFET Transistors Fall Time 40 ns (Typ.)  NTE Electronics, Inc. MOSFET Transistors Fall Time 40 ns (Typ.)   Height 0.61" (15.49mm)  NTE Electronics, Inc. Height 0.61" (15.49mm)  MOSFET Transistors Height 0.61" (15.49mm)  NTE Electronics, Inc. MOSFET Transistors Height 0.61" (15.49mm)   Length 0.42" (10.67mm)  NTE Electronics, Inc. Length 0.42" (10.67mm)  MOSFET Transistors Length 0.42" (10.67mm)  NTE Electronics, Inc. MOSFET Transistors Length 0.42" (10.67mm)   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  NTE Electronics, Inc. MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  NTE Electronics, Inc. MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  MOSFET Transistors Number of Pins 3  NTE Electronics, Inc. MOSFET Transistors Number of Pins 3   Operating and Storage Temperature -55 to +150 °C  NTE Electronics, Inc. Operating and Storage Temperature -55 to +150 °C  MOSFET Transistors Operating and Storage Temperature -55 to +150 °C  NTE Electronics, Inc. MOSFET Transistors Operating and Storage Temperature -55 to +150 °C   Package Type TO-220  NTE Electronics, Inc. Package Type TO-220  MOSFET Transistors Package Type TO-220  NTE Electronics, Inc. MOSFET Transistors Package Type TO-220   Polarization N-Channel  NTE Electronics, Inc. Polarization N-Channel  MOSFET Transistors Polarization N-Channel  NTE Electronics, Inc. MOSFET Transistors Polarization N-Channel   Power Dissipation 125 W  NTE Electronics, Inc. Power Dissipation 125 W  MOSFET Transistors Power Dissipation 125 W  NTE Electronics, Inc. MOSFET Transistors Power Dissipation 125 W   Resistance, Drain to Source On 3 Ω  NTE Electronics, Inc. Resistance, Drain to Source On 3 Ω  MOSFET Transistors Resistance, Drain to Source On 3 Ω  NTE Electronics, Inc. MOSFET Transistors Resistance, Drain to Source On 3 Ω   Resistance, Thermal, Junction to Case 1 °C?W (Max.)  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 1 °C?W (Max.)  MOSFET Transistors Resistance, Thermal, Junction to Case 1 °C?W (Max.)  NTE Electronics, Inc. MOSFET Transistors Resistance, Thermal, Junction to Case 1 °C?W (Max.)   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 60 °C⁄W  NTE Electronics, Inc. Thermal Resistance, Junction to Ambient 60 °C⁄W  MOSFET Transistors Thermal Resistance, Junction to Ambient 60 °C⁄W  NTE Electronics, Inc. MOSFET Transistors Thermal Resistance, Junction to Ambient 60 °C⁄W   Time, Turn-Off Delay 130 ns  NTE Electronics, Inc. Time, Turn-Off Delay 130 ns  MOSFET Transistors Time, Turn-Off Delay 130 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-Off Delay 130 ns   Time, Turn-On Delay 10 ns  NTE Electronics, Inc. Time, Turn-On Delay 10 ns  MOSFET Transistors Time, Turn-On Delay 10 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-On Delay 10 ns   Transconductance, Forward 4.3 S  NTE Electronics, Inc. Transconductance, Forward 4.3 S  MOSFET Transistors Transconductance, Forward 4.3 S  NTE Electronics, Inc. MOSFET Transistors Transconductance, Forward 4.3 S   Voltage, Breakdown, Drain to Source 800 V  NTE Electronics, Inc. Voltage, Breakdown, Drain to Source 800 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 800 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Breakdown, Drain to Source 800 V   Voltage, Drain to Source 800 V  NTE Electronics, Inc. Voltage, Drain to Source 800 V  MOSFET Transistors Voltage, Drain to Source 800 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Drain to Source 800 V   Voltage, Forward, Diode 1 V  NTE Electronics, Inc. Voltage, Forward, Diode 1 V  MOSFET Transistors Voltage, Forward, Diode 1 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Forward, Diode 1 V   Voltage, Gate to Source ±30 V  NTE Electronics, Inc. Voltage, Gate to Source ±30 V  MOSFET Transistors Voltage, Gate to Source ±30 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Gate to Source ±30 V  
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