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NTE2389 - 

POWER MOSFET N-CHANNEL 60V ID=38A TO-220 CASE HIGH SPEED SWITCH ENHANCEMENT MODE

NTE Electronics, Inc. NTE2389
声明：图片仅供参考，请以实物为准！
制造商产品编号：
NTE2389
仓库库存编号：
70215906
技术数据表：
View NTE2389 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

NTE2389产品概述

Enhancement Mode MOSFET, N-Channel, 40 Milliohms (Typ.)
  • High speed switch

    • NTE2389产品信息

      Brand/Series  MOSFET Series  
      Capacitance, Input  1650 pF @ 25 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  35 A  
      Height  0.61" (15.49mm)  
      Length  0.42" (10.67mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  -55 to +175 °C  
      Package Type  TO-220  
      Polarization  N-Channel  
      Power Dissipation  125 W  
      Resistance, Drain to Source On  45 Ω  
      Resistance, Thermal, Junction to Case  1.2 °C?W (Max.)  
      Temperature, Operating, Maximum  +175 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +175 °C  
      Thermal Resistance, Junction to Ambient  60 °C⁄W  
      Time, Turn-Off Delay  125 ns  
      Time, Turn-On Delay  25 ns  
      Transconductance, Forward  13.5 S  
      Voltage, Breakdown, Drain to Source  60 V  
      Voltage, Drain to Source  60 V  
      Voltage, Forward, Diode  1.4 V  
      Voltage, Gate to Source  ±30 V  
    关键词         

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    Brand/Series MOSFET Series  NTE Electronics, Inc. Brand/Series MOSFET Series  MOSFET Transistors Brand/Series MOSFET Series  NTE Electronics, Inc. MOSFET Transistors Brand/Series MOSFET Series   Capacitance, Input 1650 pF @ 25 V  NTE Electronics, Inc. Capacitance, Input 1650 pF @ 25 V  MOSFET Transistors Capacitance, Input 1650 pF @ 25 V  NTE Electronics, Inc. MOSFET Transistors Capacitance, Input 1650 pF @ 25 V   Channel Mode Enhancement  NTE Electronics, Inc. Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  NTE Electronics, Inc. MOSFET Transistors Channel Mode Enhancement   Channel Type N  NTE Electronics, Inc. Channel Type N  MOSFET Transistors Channel Type N  NTE Electronics, Inc. MOSFET Transistors Channel Type N   Configuration Single  NTE Electronics, Inc. Configuration Single  MOSFET Transistors Configuration Single  NTE Electronics, Inc. MOSFET Transistors Configuration Single   Current, Drain 35 A  NTE Electronics, Inc. Current, Drain 35 A  MOSFET Transistors Current, Drain 35 A  NTE Electronics, Inc. MOSFET Transistors Current, Drain 35 A   Height 0.61" (15.49mm)  NTE Electronics, Inc. Height 0.61" (15.49mm)  MOSFET Transistors Height 0.61" (15.49mm)  NTE Electronics, Inc. MOSFET Transistors Height 0.61" (15.49mm)   Length 0.42" (10.67mm)  NTE Electronics, Inc. Length 0.42" (10.67mm)  MOSFET Transistors Length 0.42" (10.67mm)  NTE Electronics, Inc. MOSFET Transistors Length 0.42" (10.67mm)   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  NTE Electronics, Inc. MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  NTE Electronics, Inc. MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  MOSFET Transistors Number of Pins 3  NTE Electronics, Inc. MOSFET Transistors Number of Pins 3   Operating and Storage Temperature -55 to +175 °C  NTE Electronics, Inc. Operating and Storage Temperature -55 to +175 °C  MOSFET Transistors Operating and Storage Temperature -55 to +175 °C  NTE Electronics, Inc. MOSFET Transistors Operating and Storage Temperature -55 to +175 °C   Package Type TO-220  NTE Electronics, Inc. Package Type TO-220  MOSFET Transistors Package Type TO-220  NTE Electronics, Inc. MOSFET Transistors Package Type TO-220   Polarization N-Channel  NTE Electronics, Inc. Polarization N-Channel  MOSFET Transistors Polarization N-Channel  NTE Electronics, Inc. MOSFET Transistors Polarization N-Channel   Power Dissipation 125 W  NTE Electronics, Inc. Power Dissipation 125 W  MOSFET Transistors Power Dissipation 125 W  NTE Electronics, Inc. MOSFET Transistors Power Dissipation 125 W   Resistance, Drain to Source On 45 Ω  NTE Electronics, Inc. Resistance, Drain to Source On 45 Ω  MOSFET Transistors Resistance, Drain to Source On 45 Ω  NTE Electronics, 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Operating, Range -55 to +175 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Range -55 to +175 °C   Thermal Resistance, Junction to Ambient 60 °C⁄W  NTE Electronics, Inc. Thermal Resistance, Junction to Ambient 60 °C⁄W  MOSFET Transistors Thermal Resistance, Junction to Ambient 60 °C⁄W  NTE Electronics, Inc. MOSFET Transistors Thermal Resistance, Junction to Ambient 60 °C⁄W   Time, Turn-Off Delay 125 ns  NTE Electronics, Inc. Time, Turn-Off Delay 125 ns  MOSFET Transistors Time, Turn-Off Delay 125 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-Off Delay 125 ns   Time, Turn-On Delay 25 ns  NTE Electronics, Inc. Time, Turn-On Delay 25 ns  MOSFET Transistors Time, Turn-On Delay 25 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-On Delay 25 ns   Transconductance, Forward 13.5 S  NTE Electronics, Inc. Transconductance, Forward 13.5 S  MOSFET Transistors Transconductance, Forward 13.5 S  NTE Electronics, Inc. MOSFET Transistors Transconductance, Forward 13.5 S   Voltage, Breakdown, Drain to Source 60 V  NTE Electronics, Inc. Voltage, Breakdown, Drain to Source 60 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 60 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Breakdown, Drain to Source 60 V   Voltage, Drain to Source 60 V  NTE Electronics, Inc. Voltage, Drain to Source 60 V  MOSFET Transistors Voltage, Drain to Source 60 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Drain to Source 60 V   Voltage, Forward, Diode 1.4 V  NTE Electronics, Inc. Voltage, Forward, Diode 1.4 V  MOSFET Transistors Voltage, Forward, Diode 1.4 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Forward, Diode 1.4 V   Voltage, Gate to Source ±30 V  NTE Electronics, Inc. Voltage, Gate to Source ±30 V  MOSFET Transistors Voltage, Gate to Source ±30 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Gate to Source ±30 V  
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