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NTE2393 - 

POWER MOSFET N-CHANNEL 500V ID=9A TO-3PCASE HIGH SPEED SWITCH ENHANCEMENT MODE

NTE Electronics, Inc. NTE2393
声明:图片仅供参考,请以实物为准!
制造商产品编号:
NTE2393
仓库库存编号:
70216019
技术数据表:
View NTE2393 Datasheet Datasheet
订购热线: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!

NTE2393产品概述

N-Channel Enhancement Mode Power MOSFET, Continuous Drain Current 9 A @ +25 °C
  • Ultra fast switching for operation at less than 100kHz
  • High voltage: 500 V for off-line SMPS
  • High current: 9 A for up to 350 W SMPS
    The NTE2393 is an N-channel enhancement mode power MOSFET. Easy drive and very fast switching times make this device ideal for high speed switching applications.
  • NTE2393产品信息

      Application  Switching mode power supplies, uninterruptible power supplies and motor speed control  
      Brand/Series  MOSFET Series  
      Capacitance, Input  1600 pF @25 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  9 A  
      Dimensions  15.62 x 4.82 x 20 mm  
      Fall Time  30 nS  
      Height  0.787" (20mm)  
      Length  0.614" (15.62mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  -65 to +150 °C  
      Package Type  TO-3P  
      Polarization  N-Channel  
      Power Dissipation  150 W  
      Resistance, Drain to Source On  1.4 Ω  
      Resistance, Thermal, Junction to Case  0.83 °C⁄W  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -65 °C  
      Temperature, Operating, Range  -65 to +150 °C  
      Time, Turn-Off Delay  130 ns  
      Time, Turn-On Delay  30 ns  
      Transconductance, Forward  5 S  
      Voltage, Breakdown, Drain to Source  500 V  
      Voltage, Drain to Source  500 V  
      Voltage, Forward, Diode  1.15 V  
      Voltage, Gate to Source  ±20 V  
      Width  0.19" (4.82mm)  
    关键词         

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