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N-Channel Enhancement Mode Power MOSFET, Continuous Drain Current 14 A @ +25 °C

High voltage: 450 V for off-line SMPS

High current: 12 A for up to 350 W SMPS

Ultra fast switching for operation at less than 100 kHz
The NTE2394 is an N-channel enhancement mode power MOSFET. Easy drive and very fast switching times make this device ideal for high speed switching applications.

Application	Switching mode power supplies, uninterruptible power supplies and motor speed control
Brand/Series	MOSFET Series
Capacitance, Input	3000 pF @25 V
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
Current, Drain	14 A
Dimensions	15.62 x 4.82 x 20 mm
Fall Time	70 ns (Max.)
Gate Charge, Total	120 nC
Height	0.787" (20mm)
Length	0.614" (15.62mm)
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	3
Operating and Storage Temperature	-55 to +150 °C
Package Type	TO-3P
Polarization	N-Channel
Power Dissipation	180 W
Resistance, Drain to Source On	0.4 Ω
Resistance, Thermal, Junction to Case	0.69 °C⁄W
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Thermal Resistance, Junction to Ambient	30 °C⁄W
Time, Turn-Off Delay	150 ns
Time, Turn-On Delay	35 ns
Transconductance, Forward	9.3 S
Typical Gate Charge @ Vgs	Maximum of 120 nC @ 10 V
Voltage, Breakdown, Drain to Source	500 V
Voltage, Drain to Source	500 V
Voltage, Forward, Diode	1.4 V
Voltage, Gate to Source	±20 V
Width	0.19" (4.82mm)
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• L-com Connectivity
  Adapter; USB Type B - Type A A; USB; EMI/RFI
  
  型号：ECF504-BAS
  仓库库存编号：70126196
  
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• Vishay Dale
  Resistor; Wirewound; Res 2 Kilohms; Pwr-Rtg 10 W; Tol 1%; Lug; Alum Housed; Military
  
  型号：RH0102K000FE02
  仓库库存编号：70201638
  
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Application Switching mode power supplies, uninterruptible power supplies and motor speed control  NTE Electronics, Inc. Application Switching mode power supplies, uninterruptible power supplies and motor speed control  MOSFET Transistors Application Switching mode power supplies, uninterruptible power supplies and motor speed control  NTE Electronics, Inc. MOSFET Transistors Application Switching mode power supplies, uninterruptible power supplies and motor speed control   Brand/Series MOSFET Series  NTE Electronics, Inc. Brand/Series MOSFET Series  MOSFET Transistors Brand/Series MOSFET Series  NTE Electronics, Inc. MOSFET Transistors Brand/Series MOSFET Series   Capacitance, Input 3000 pF @25 V  NTE Electronics, Inc. Capacitance, Input 3000 pF @25 V  MOSFET Transistors Capacitance, Input 3000 pF @25 V  NTE Electronics, Inc. MOSFET Transistors Capacitance, Input 3000 pF @25 V   Channel Mode Enhancement  NTE Electronics, Inc. Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  NTE Electronics, Inc. MOSFET Transistors Channel Mode Enhancement   Channel Type N  NTE Electronics, Inc. Channel Type N  MOSFET Transistors Channel Type N  NTE Electronics, Inc. MOSFET Transistors Channel Type N   Configuration Single  NTE Electronics, Inc. Configuration Single  MOSFET Transistors Configuration Single  NTE Electronics, Inc. MOSFET Transistors Configuration Single   Current, Drain 14 A  NTE Electronics, Inc. Current, Drain 14 A  MOSFET Transistors Current, Drain 14 A  NTE Electronics, Inc. MOSFET Transistors Current, Drain 14 A   Dimensions 15.62 x 4.82 x 20 mm  NTE Electronics, Inc. Dimensions 15.62 x 4.82 x 20 mm  MOSFET Transistors Dimensions 15.62 x 4.82 x 20 mm  NTE Electronics, Inc. MOSFET Transistors Dimensions 15.62 x 4.82 x 20 mm   Fall Time 70 ns (Max.)  NTE Electronics, Inc. Fall Time 70 ns (Max.)  MOSFET Transistors Fall Time 70 ns (Max.)  NTE Electronics, Inc. MOSFET Transistors Fall Time 70 ns (Max.)   Gate Charge, Total 120 nC  NTE Electronics, Inc. Gate Charge, Total 120 nC  MOSFET Transistors Gate Charge, Total 120 nC  NTE Electronics, Inc. MOSFET Transistors Gate Charge, Total 120 nC   Height 0.787" (20mm)  NTE Electronics, Inc. Height 0.787" (20mm)  MOSFET Transistors Height 0.787" (20mm)  NTE Electronics, Inc. MOSFET Transistors Height 0.787" (20mm)   Length 0.614" (15.62mm)  NTE Electronics, Inc. Length 0.614" (15.62mm)  MOSFET Transistors Length 0.614" (15.62mm)  NTE Electronics, Inc. MOSFET Transistors Length 0.614" (15.62mm)   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  NTE Electronics, Inc. MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  NTE Electronics, Inc. MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  MOSFET Transistors Number of Pins 3  NTE Electronics, Inc. MOSFET Transistors Number of Pins 3   Operating and Storage Temperature -55 to +150 °C  NTE Electronics, Inc. Operating and Storage Temperature -55 to +150 °C  MOSFET Transistors Operating and Storage Temperature -55 to +150 °C  NTE Electronics, Inc. MOSFET Transistors Operating and Storage Temperature -55 to +150 °C   Package Type TO-3P  NTE Electronics, Inc. Package Type TO-3P  MOSFET Transistors Package Type TO-3P  NTE Electronics, Inc. MOSFET Transistors Package Type TO-3P   Polarization N-Channel  NTE Electronics, Inc. Polarization N-Channel  MOSFET Transistors Polarization N-Channel  NTE Electronics, Inc. MOSFET Transistors Polarization N-Channel   Power Dissipation 180 W  NTE Electronics, Inc. Power Dissipation 180 W  MOSFET Transistors Power Dissipation 180 W  NTE Electronics, Inc. MOSFET Transistors Power Dissipation 180 W   Resistance, Drain to Source On 0.4 Ω  NTE Electronics, Inc. Resistance, Drain to Source On 0.4 Ω  MOSFET Transistors Resistance, Drain to Source On 0.4 Ω  NTE Electronics, Inc. MOSFET Transistors Resistance, Drain to Source On 0.4 Ω   Resistance, Thermal, Junction to Case 0.69 °C⁄W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 0.69 °C⁄W  MOSFET Transistors Resistance, Thermal, Junction to Case 0.69 °C⁄W  NTE Electronics, Inc. MOSFET Transistors Resistance, Thermal, Junction to Case 0.69 °C⁄W   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 30 °C⁄W  NTE Electronics, Inc. Thermal Resistance, Junction to Ambient 30 °C⁄W  MOSFET Transistors Thermal Resistance, Junction to Ambient 30 °C⁄W  NTE Electronics, Inc. MOSFET Transistors Thermal Resistance, Junction to Ambient 30 °C⁄W   Time, Turn-Off Delay 150 ns  NTE Electronics, Inc. Time, Turn-Off Delay 150 ns  MOSFET Transistors Time, Turn-Off Delay 150 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-Off Delay 150 ns   Time, Turn-On Delay 35 ns  NTE Electronics, Inc. Time, Turn-On Delay 35 ns  MOSFET Transistors Time, Turn-On Delay 35 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-On Delay 35 ns   Transconductance, Forward 9.3 S  NTE Electronics, Inc. Transconductance, Forward 9.3 S  MOSFET Transistors Transconductance, Forward 9.3 S  NTE Electronics, Inc. MOSFET Transistors Transconductance, Forward 9.3 S   Typical Gate Charge @ Vgs Maximum of 120 nC @ 10 V  NTE Electronics, Inc. Typical Gate Charge @ Vgs Maximum of 120 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 120 nC @ 10 V  NTE Electronics, Inc. MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 120 nC @ 10 V   Voltage, Breakdown, Drain to Source 500 V  NTE Electronics, Inc. Voltage, Breakdown, Drain to Source 500 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 500 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Breakdown, Drain to Source 500 V   Voltage, Drain to Source 500 V  NTE Electronics, Inc. Voltage, Drain to Source 500 V  MOSFET Transistors Voltage, Drain to Source 500 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Drain to Source 500 V   Voltage, Forward, Diode 1.4 V  NTE Electronics, Inc. Voltage, Forward, Diode 1.4 V  MOSFET Transistors Voltage, Forward, Diode 1.4 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Forward, Diode 1.4 V   Voltage, Gate to Source ±20 V  NTE Electronics, Inc. Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.19" (4.82mm)  NTE Electronics, Inc. Width 0.19" (4.82mm)  MOSFET Transistors Width 0.19" (4.82mm)  NTE Electronics, Inc. MOSFET Transistors Width 0.19" (4.82mm)