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NTE2397 - 

POWER MOSFET N-CHANNEL 400V ID=10A TO-220 CASE HIGH SPEED SWITCH ENHANCEMENT MOD

NTE Electronics, Inc. NTE2397
声明：图片仅供参考，请以实物为准！
制造商产品编号：
NTE2397
仓库库存编号：
70214787
技术数据表：
View NTE2397 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

NTE2397产品信息

  Brand/Series  MOSFET Series  
  Capacitance, Input  1400 pF @25 V  
  Channel Mode  Enhancement  
  Channel Type  N  
  Configuration  Single  
  Current, Drain  10 A  
  Dimensions  10.67 X 15.49 mm  
  Height  0.61" (15.49mm)  
  Length  0.42" (10.67mm)  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-220  
  Power Dissipation  125 W  
  Resistance, Drain to Source On  0.55 Ω  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Time, Turn-Off Delay  50 ns  
  Time, Turn-On Delay  14 ns  
  Transconductance, Forward  5.8 S  
  Typical Gate Charge @ Vgs  63 nC @ 10 V  
  Voltage, Drain to Source  400 V  
  Voltage, Forward, Diode  2 V  
  Voltage, Gate to Source  20 V  
关键词         

NTE2397相关搜索

Brand/Series MOSFET Series  NTE Electronics, Inc. Brand/Series MOSFET Series  MOSFET Transistors Brand/Series MOSFET Series  NTE Electronics, Inc. MOSFET Transistors Brand/Series MOSFET Series   Capacitance, Input 1400 pF @25 V  NTE Electronics, Inc. Capacitance, Input 1400 pF @25 V  MOSFET Transistors Capacitance, Input 1400 pF @25 V  NTE Electronics, Inc. MOSFET Transistors Capacitance, Input 1400 pF @25 V   Channel Mode Enhancement  NTE Electronics, Inc. Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  NTE Electronics, Inc. MOSFET Transistors Channel Mode Enhancement   Channel Type N  NTE Electronics, Inc. Channel Type N  MOSFET Transistors Channel Type N  NTE Electronics, Inc. MOSFET Transistors Channel Type N   Configuration Single  NTE Electronics, Inc. Configuration Single  MOSFET Transistors Configuration Single  NTE Electronics, Inc. MOSFET Transistors Configuration Single   Current, Drain 10 A  NTE Electronics, Inc. Current, Drain 10 A  MOSFET Transistors Current, Drain 10 A  NTE Electronics, Inc. MOSFET Transistors Current, Drain 10 A   Dimensions 10.67 X 15.49 mm  NTE Electronics, Inc. Dimensions 10.67 X 15.49 mm  MOSFET Transistors Dimensions 10.67 X 15.49 mm  NTE Electronics, Inc. MOSFET Transistors Dimensions 10.67 X 15.49 mm   Height 0.61" (15.49mm)  NTE Electronics, Inc. Height 0.61" (15.49mm)  MOSFET Transistors Height 0.61" (15.49mm)  NTE Electronics, Inc. MOSFET Transistors Height 0.61" (15.49mm)   Length 0.42" (10.67mm)  NTE Electronics, Inc. Length 0.42" (10.67mm)  MOSFET Transistors Length 0.42" (10.67mm)  NTE Electronics, Inc. MOSFET Transistors Length 0.42" (10.67mm)   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  NTE Electronics, Inc. MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  NTE Electronics, Inc. MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  MOSFET Transistors Number of Pins 3  NTE Electronics, Inc. MOSFET Transistors Number of Pins 3   Package Type TO-220  NTE Electronics, Inc. Package Type TO-220  MOSFET Transistors Package Type TO-220  NTE Electronics, Inc. MOSFET Transistors Package Type TO-220   Power Dissipation 125 W  NTE Electronics, Inc. Power Dissipation 125 W  MOSFET Transistors Power Dissipation 125 W  NTE Electronics, Inc. MOSFET Transistors Power Dissipation 125 W   Resistance, Drain to Source On 0.55 Ω  NTE Electronics, Inc. Resistance, Drain to Source On 0.55 Ω  MOSFET Transistors Resistance, Drain to Source On 0.55 Ω  NTE Electronics, Inc. MOSFET Transistors Resistance, Drain to Source On 0.55 Ω   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 50 ns  NTE Electronics, Inc. Time, Turn-Off Delay 50 ns  MOSFET Transistors Time, Turn-Off Delay 50 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-Off Delay 50 ns   Time, Turn-On Delay 14 ns  NTE Electronics, Inc. Time, Turn-On Delay 14 ns  MOSFET Transistors Time, Turn-On Delay 14 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-On Delay 14 ns   Transconductance, Forward 5.8 S  NTE Electronics, Inc. Transconductance, Forward 5.8 S  MOSFET Transistors Transconductance, Forward 5.8 S  NTE Electronics, Inc. MOSFET Transistors Transconductance, Forward 5.8 S   Typical Gate Charge @ Vgs 63 nC @ 10 V  NTE Electronics, Inc. Typical Gate Charge @ Vgs 63 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 63 nC @ 10 V  NTE Electronics, Inc. MOSFET Transistors Typical Gate Charge @ Vgs 63 nC @ 10 V   Voltage, Drain to Source 400 V  NTE Electronics, Inc. Voltage, Drain to Source 400 V  MOSFET Transistors Voltage, Drain to Source 400 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Drain to Source 400 V   Voltage, Forward, Diode 2 V  NTE Electronics, Inc. Voltage, Forward, Diode 2 V  MOSFET Transistors Voltage, Forward, Diode 2 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Forward, Diode 2 V   Voltage, Gate to Source 20 V  NTE Electronics, Inc. Voltage, Gate to Source 20 V  MOSFET Transistors Voltage, Gate to Source 20 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Gate to Source 20 V  
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