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NTE2399 - 

POWER MOSFET N-CHANNEL 1000V ID=3.1A TO-220 CASE HIGH SPEED SWITCH ENHANCEMENT M

NTE Electronics, Inc. NTE2399
声明：图片仅供参考，请以实物为准！
制造商产品编号：
NTE2399
仓库库存编号：
70215911
技术数据表：
View NTE2399 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

NTE2399产品概述

N-Channel Enhancement Mode MOSFET, 3.1 Amps, 125 Watts, -55°C to +150°C, M3 Screw Mounting
  • Dynamic dv/dt rating
  • Repetitive avalanche rated
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements

    • NTE2399产品信息

      Brand/Series  MOSFET Series  
      Capacitance, Input  980 pF @ 25 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  3.1 A  
      Fall Time  29 ns (Typ.)  
      Gate Charge, Total  80 nC  
      Height  0.61" (15.49mm)  
      Length  0.42" (10.67mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  -55 to +150 °C  
      Package Type  TO-220  
      Polarization  N-Channel  
      Power Dissipation  125 W  
      Resistance, Drain to Source On  0.5 Ω  
      Resistance, Thermal, Junction to Case  1 °C⁄W  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Thermal Resistance, Junction to Ambient  62 °C⁄W  
      Time, Turn-Off Delay  89 ns  
      Time, Turn-On Delay  12 ns  
      Transconductance, Forward  2.1 S  
      Typical Gate Charge @ Vgs  Maximum of 80 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  1000 V  
      Voltage, Drain to Source  1000 V  
      Voltage, Forward, Diode  1.8 V  
      Voltage, Gate to Source  ±20 V  
    关键词         

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