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NTE248 - 

TRANSISTOR PNP SILICON DARLINGTON 100V IC=12A TO-3 CASE COMP'L TO NTE247

NTE Electronics, Inc. NTE248
声明：图片仅供参考，请以实物为准！
制造商产品编号：
NTE248
仓库库存编号：
70215977
技术数据表：
View NTE248 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

NTE248产品概述

Silicon Complementary Transistor Darlington Power Amplifier, PNP Transistor Type
  • Monolithic construction with built-in base-emitter shunt resistors
  • -65 to +200 °C operating temperature range
    Silicon complementary darlington transistor designed for general-purpose amplifier and low-frequency switching applications.

    • NTE248产品信息

      Brand/Series  Transistor Series  
      Configuration  Common Base  
      Current, Collector  12 A  
      Current, Gain  100  
      Current, Output  12 A  
      Diameter  22.2 mm  
      Dimensions  22.2 Dia. x 8.89 H mm  
      Gain, DC Current, Maximum  18000  
      Gain, DC Current, Minimum  750  
      Height  0.35" (8.89mm)  
      Input Voltage  5 V  
      Material  Si  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Package Type  TO-3  
      Polarity  PNP  
      Power Dissipation  150 W  
      Primary Type  Si  
      Resistance, Thermal, Junction to Case  1.17 °C⁄W  
      Temperature, Operating, Maximum  +200 °C  
      Temperature, Operating, Minimum  -65 °C  
      Temperature, Operating, Range  -65 to +200 °C  
      Transistor Polarity  PNP  
      Transistor Type  PNP  
      Type  Amplifier, Power  
      Voltage, Collector to Base  100 V  
      Voltage, Collector to Emitter  100 V  
      Voltage, Collector to Emitter, Saturation  3 V  
      Voltage, Emitter to Base  5 V  
      Voltage, Output  100 V  
      Voltage, Saturation, Base to Emitter  4 V  
      Voltage, Saturation, Collector to Emitter  2 V  
    关键词         

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V  Bipolar Transistors Voltage, Output 100 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Output 100 V   Voltage, Saturation, Base to Emitter 4 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 4 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 4 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 4 V   Voltage, Saturation, Collector to Emitter 2 V  NTE Electronics, Inc. Voltage, Saturation, Collector to Emitter 2 V  Bipolar Transistors Voltage, Saturation, Collector to Emitter 2 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Collector to Emitter 2 V  
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