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NTE251 - 

TRANSISTOR NPN SILICON DARLINGTON 100V IC=20A TO-3 CASE POWER AMP COMP'L TO NTE2

NTE Electronics, Inc. NTE251
声明：图片仅供参考，请以实物为准！
制造商产品编号：
NTE251
仓库库存编号：
70215952
技术数据表：
View NTE251 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

NTE251产品概述

Silicon Complementaryyy Transistors, Darlington Power Amplifier
  • Collector-emitter sustaining voltage: VCEO (sus) == 100 V Min
  • Monolithic construction with built-in base-emitter shunt resistors
    Designed for general-purpose amplifier and low-frequency switching applications.

    • NTE251产品信息

      Brand/Series  Transistor Series  
      Configuration  Common Base  
      Current, Collector  20 A  
      Current, Gain  100  
      Current, Output  20 A  
      Diameter  22.2 mm  
      Dimensions  22.2 Dia. x 8.89 H mm  
      Height  0.35" (8.89mm)  
      Input Voltage  5 V  
      Material  Si  
      Mounting Type  Through Hole  
      Number of Elements per Chip  2  
      Number of Pins  3  
      Package Type  TO-3  
      Polarity  NPN  
      Power Dissipation  160 W  
      Primary Type  Si  
      Resistance, Thermal, Junction to Case  1.09 °C⁄W  
      Temperature Range, Junction, Operating  -65 to 200 °C  
      Temperature, Operating, Maximum  +200 °C  
      Temperature, Operating, Minimum  -65 °C  
      Temperature, Operating, Range  -65 to +200 °C  
      Transistor Polarity  NPN  
      Transistor Type  NPN  
      Type  Amplifier, Power  
      Voltage, Collector to Base  100 V  
      Voltage, Collector to Emitter  100 V  
      Voltage, Collector to Emitter, Saturation  3 V  
      Voltage, Emitter to Base  5 V  
      Voltage, Output  100 V  
      Voltage, Saturation, Base to Emitter  4 V  
      Voltage, Saturation, Collector to Emitter  2 V  
      Voltage, Sustaining, Collector to Emitter  100 V  
    关键词         

    NTE251相关搜索

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Transistors Diameter 22.2 mm  NTE Electronics, Inc. Bipolar Transistors Diameter 22.2 mm   Dimensions 22.2 Dia. x 8.89 H mm  NTE Electronics, Inc. Dimensions 22.2 Dia. x 8.89 H mm  Bipolar Transistors Dimensions 22.2 Dia. x 8.89 H mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 22.2 Dia. x 8.89 H mm   Height 0.35" (8.89mm)  NTE Electronics, Inc. Height 0.35" (8.89mm)  Bipolar Transistors Height 0.35" (8.89mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.35" (8.89mm)   Input Voltage 5 V  NTE Electronics, Inc. Input Voltage 5 V  Bipolar Transistors Input Voltage 5 V  NTE Electronics, Inc. Bipolar Transistors Input Voltage 5 V   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 2  NTE Electronics, Inc. Number of Elements per Chip 2  Bipolar Transistors Number of Elements per Chip 2  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 2   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-3  NTE Electronics, Inc. Package Type TO-3  Bipolar Transistors Package Type TO-3  NTE Electronics, Inc. Bipolar Transistors Package Type TO-3   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 160 W  NTE Electronics, Inc. Power Dissipation 160 W  Bipolar Transistors Power Dissipation 160 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 160 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 1.09 °C⁄W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 1.09 °C⁄W  Bipolar Transistors Resistance, Thermal, Junction to Case 1.09 °C⁄W  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Case 1.09 °C⁄W   Temperature Range, Junction, Operating -65 to 200 °C  NTE Electronics, Inc. Temperature Range, Junction, Operating -65 to 200 °C  Bipolar Transistors Temperature Range, Junction, Operating -65 to 200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature Range, Junction, Operating -65 to 200 °C   Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +200 °C  Bipolar Transistors Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +200 °C   Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Temperature, Operating, Range -65 to +200 °C  Bipolar Transistors Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -65 to +200 °C   Transistor Polarity NPN  NTE Electronics, Inc. Transistor Polarity NPN  Bipolar Transistors Transistor Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Polarity NPN   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type Amplifier, Power  NTE Electronics, Inc. Type Amplifier, Power  Bipolar Transistors Type Amplifier, Power  NTE Electronics, Inc. Bipolar Transistors Type Amplifier, Power   Voltage, Collector to Base 100 V  NTE Electronics, Inc. Voltage, Collector to Base 100 V  Bipolar Transistors Voltage, Collector to Base 100 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 100 V   Voltage, Collector to Emitter 100 V  NTE Electronics, Inc. Voltage, Collector to Emitter 100 V  Bipolar Transistors Voltage, Collector to Emitter 100 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 100 V   Voltage, Collector to Emitter, Saturation 3 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 3 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 3 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 3 V   Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Voltage, Emitter to Base 5 V  Bipolar Transistors Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 5 V   Voltage, Output 100 V  NTE Electronics, Inc. Voltage, Output 100 V  Bipolar Transistors Voltage, Output 100 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Output 100 V   Voltage, Saturation, Base to Emitter 4 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 4 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 4 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 4 V   Voltage, Saturation, Collector to Emitter 2 V  NTE Electronics, Inc. Voltage, Saturation, Collector to Emitter 2 V  Bipolar Transistors Voltage, Saturation, Collector to Emitter 2 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Collector to Emitter 2 V   Voltage, Sustaining, Collector to Emitter 100 V  NTE Electronics, Inc. Voltage, Sustaining, Collector to Emitter 100 V  Bipolar Transistors Voltage, Sustaining, Collector to Emitter 100 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Sustaining, Collector to Emitter 100 V  
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