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Silicon NPN Transistors

Brand/Series	Transistor Series
Configuration	Common Base
Current, Collector	12 A
Current, Gain	10
Dimensions	10.2 x 4.4 x 17.0 mm
Frequency, Operating	20 MHz
Gain, DC Current, Minimum	10
Height	0.669" (17mm)
Length	0.401" (10.2mm)
Material	Si
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	3
Package Type	TO-220
Polarity	NPN
Power Dissipation	40 W
Primary Type	Si
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Transistor Type	NPN
Type	High Voltage, Switch
Voltage, Breakdown, Collector to Emitter	400 V
Voltage, Collector to Base	500 V
Voltage, Collector to Emitter	400 V
Voltage, Collector to Emitter, Saturation	0.8 V
Voltage, Emitter to Base	7 V
Voltage, Saturation, Base to Emitter	1.5 V
Voltage, Saturation, Collector to Emitter	0.8 V (Max.)
Voltage, Sustaining, Collector to Emitter	400 V (Min.)
Width	0.173" (4.4mm)
关键词

Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 12 A  NTE Electronics, Inc. Current, Collector 12 A  Bipolar Transistors Current, Collector 12 A  NTE Electronics, Inc. Bipolar Transistors Current, Collector 12 A   Current, Gain 10  NTE Electronics, Inc. Current, Gain 10  Bipolar Transistors Current, Gain 10  NTE Electronics, Inc. Bipolar Transistors Current, Gain 10   Dimensions 10.2 x 4.4 x 17.0 mm  NTE Electronics, Inc. Dimensions 10.2 x 4.4 x 17.0 mm  Bipolar Transistors Dimensions 10.2 x 4.4 x 17.0 mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 10.2 x 4.4 x 17.0 mm   Frequency, Operating 20 MHz  NTE Electronics, Inc. Frequency, Operating 20 MHz  Bipolar Transistors Frequency, Operating 20 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 20 MHz   Gain, DC Current, Minimum 10  NTE Electronics, Inc. Gain, DC Current, Minimum 10  Bipolar Transistors Gain, DC Current, Minimum 10  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 10   Height 0.669" (17mm)  NTE Electronics, Inc. Height 0.669" (17mm)  Bipolar Transistors Height 0.669" (17mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.669" (17mm)   Length 0.401" (10.2mm)  NTE Electronics, Inc. Length 0.401" (10.2mm)  Bipolar Transistors Length 0.401" (10.2mm)  NTE Electronics, Inc. Bipolar Transistors Length 0.401" (10.2mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-220  NTE Electronics, Inc. Package Type TO-220  Bipolar Transistors Package Type TO-220  NTE Electronics, Inc. Bipolar Transistors Package Type TO-220   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 40 W  NTE Electronics, Inc. Power Dissipation 40 W  Bipolar Transistors Power Dissipation 40 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 40 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  Bipolar Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Temperature, Operating, Range -55 to +150 °C  Bipolar Transistors Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -55 to +150 °C   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type High Voltage, Switch  NTE Electronics, Inc. Type High Voltage, Switch  Bipolar Transistors Type High Voltage, Switch  NTE Electronics, Inc. Bipolar Transistors Type High Voltage, Switch   Voltage, Breakdown, Collector to Emitter 400 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 400 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 400 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 400 V   Voltage, Collector to Base 500 V  NTE Electronics, Inc. Voltage, Collector to Base 500 V  Bipolar Transistors Voltage, Collector to Base 500 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 500 V   Voltage, Collector to Emitter 400 V  NTE Electronics, Inc. Voltage, Collector to Emitter 400 V  Bipolar Transistors Voltage, Collector to Emitter 400 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 400 V   Voltage, Collector to Emitter, Saturation 0.8 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 0.8 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.8 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.8 V   Voltage, Emitter to Base 7 V  NTE Electronics, Inc. Voltage, Emitter to Base 7 V  Bipolar Transistors Voltage, Emitter to Base 7 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 7 V   Voltage, Saturation, Base to Emitter 1.5 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 1.5 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 1.5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 1.5 V   Voltage, Saturation, Collector to Emitter 0.8 V (Max.)  NTE Electronics, Inc. Voltage, Saturation, Collector to Emitter 0.8 V (Max.)  Bipolar Transistors Voltage, Saturation, Collector to Emitter 0.8 V (Max.)  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Collector to Emitter 0.8 V (Max.)   Voltage, Sustaining, Collector to Emitter 400 V (Min.)  NTE Electronics, Inc. Voltage, Sustaining, Collector to Emitter 400 V (Min.)  Bipolar Transistors Voltage, Sustaining, Collector to Emitter 400 V (Min.)  NTE Electronics, Inc. Bipolar Transistors Voltage, Sustaining, Collector to Emitter 400 V (Min.)   Width 0.173" (4.4mm)  NTE Electronics, Inc. Width 0.173" (4.4mm)  Bipolar Transistors Width 0.173" (4.4mm)  NTE Electronics, Inc. Bipolar Transistors Width 0.173" (4.4mm)