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Silicon Complementary Transistor

Monolithic construction with built-in base-emitter shunt resistors
The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications.

Brand/Series	Transistor Series
Configuration	Common Base
Current, Collector	10 A
Current, Gain	500
Current, Output	10 A
Dimensions	15.24 x 4.4 x 13.97 mm
Height	0.55" (13.97mm)
Input Voltage	5 V
Length	0.6" (15.24mm)
Material	Si
Mounting Type	Through Hole
Number of Elements per Chip	2
Number of Pins	3
Package Type	TO-218
Polarity	PNP
Power Dissipation	125 W
Primary Type	Si
Resistance, Thermal, Junction to Ambient	35.7 °C/W
Resistance, Thermal, Junction to Case	1 °C/W
Temperature Range, Junction, Operating	-65 to +150 °C
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-65 °C
Temperature, Operating, Range	-65 to +150 °C
Thermal Resistance, Junction to Ambient	35.7 °C/W
Transistor Polarity	PNP
Transistor Type	PNP
Type	Amplifier, Power
Voltage, Collector to Base	100 V
Voltage, Collector to Emitter	100 V
Voltage, Collector to Emitter, Saturation	3 V
Voltage, Emitter to Base	5 V
Voltage, Output	100 V
Voltage, Saturation, Base to Emitter	3.5 V
Voltage, Saturation, Collector to Emitter	2 V
Voltage, Sustaining, Collector to Emitter	100 V
Width	0.173" (4.4mm)
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• NTE Electronics, Inc.
  TRANSISTOR NPN SILICON DARLINGTON 100V IC=10A TO-3P CASE COMPLEMENT TO NTE271
  
  型号：NTE270
  仓库库存编号：70215887
  
• 
  
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