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NTE287 - 

TRANSISTOR NPN SILICON 300V IC-0.5A TO-92 CASE GENERAL PURPOSE AMP COMP'L TO NTE

NTE Electronics, Inc. NTE287
声明：图片仅供参考，请以实物为准！
制造商产品编号：
NTE287
仓库库存编号：
70215749
技术数据表：
View NTE287 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

NTE287产品概述

Silicon Complementary Transistors

NTE287产品信息

  Brand/Series  Transistor Series  
  Complement to  PNP  
  Configuration  Common Base  
  Current, Collector  500 mA  
  Current, Continuous Collector  500 mA  
  Current, Gain  40  
  Device Dissipation  0.625 W  
  Dimensions  5.2 x 4.2 x 5.33 mm  
  Frequency, Operating  50 MHz  
  Gain, DC Current, Minimum  40  
  Height  0.21" (5.33mm)  
  Length  0.204" (5.2mm)  
  Material  Si  
  Material Type  Silicon  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-92  
  Polarity  NPN  
  Power Dissipation  625 mW  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  83.3 °C/mW  
  Temperature Range, Junction, Operating  -55 to +150 °C  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Thermal Resistance, Junction to Ambient  200 °C/mW  
  Transistor Polarity  NPN  
  Transistor Type  NPN  
  Type  General Purpose, High Voltage  
  Voltage, Breakdown, Collector to Emitter  300 V  
  Voltage, Collector to Base  300 V  
  Voltage, Collector to Emitter  300 V  
  Voltage, Collector to Emitter, Saturation  0.5 V  
  Voltage, Emitter to Base  6 V  
  Voltage, Saturation, Base to Emitter  0.9 V  
  Width  0.165" (4.2mm)  
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Current, Gain 40  NTE Electronics, Inc. Current, Gain 40  Bipolar Transistors Current, Gain 40  NTE Electronics, Inc. Bipolar Transistors Current, Gain 40   Device Dissipation 0.625 W  NTE Electronics, Inc. Device Dissipation 0.625 W  Bipolar Transistors Device Dissipation 0.625 W  NTE Electronics, Inc. Bipolar Transistors Device Dissipation 0.625 W   Dimensions 5.2 x 4.2 x 5.33 mm  NTE Electronics, Inc. Dimensions 5.2 x 4.2 x 5.33 mm  Bipolar Transistors Dimensions 5.2 x 4.2 x 5.33 mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 5.2 x 4.2 x 5.33 mm   Frequency, Operating 50 MHz  NTE Electronics, Inc. Frequency, Operating 50 MHz  Bipolar Transistors Frequency, Operating 50 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 50 MHz   Gain, DC Current, Minimum 40  NTE Electronics, Inc. Gain, DC Current, Minimum 40  Bipolar Transistors Gain, DC Current, Minimum 40  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 40   Height 0.21" (5.33mm)  NTE Electronics, Inc. Height 0.21" (5.33mm)  Bipolar Transistors Height 0.21" (5.33mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.21" (5.33mm)   Length 0.204" (5.2mm)  NTE Electronics, Inc. Length 0.204" (5.2mm)  Bipolar Transistors Length 0.204" (5.2mm)  NTE Electronics, Inc. Bipolar Transistors Length 0.204" (5.2mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Material Type Silicon  NTE Electronics, Inc. Material Type Silicon  Bipolar Transistors Material Type Silicon  NTE Electronics, Inc. Bipolar Transistors Material Type Silicon   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-92  NTE Electronics, Inc. Package Type TO-92  Bipolar Transistors Package Type TO-92  NTE Electronics, Inc. Bipolar Transistors Package Type TO-92   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 625 mW  NTE Electronics, Inc. Power Dissipation 625 mW  Bipolar Transistors Power Dissipation 625 mW  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 625 mW   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 83.3 °C/mW  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 83.3 °C/mW  Bipolar Transistors Resistance, Thermal, Junction to Case 83.3 °C/mW  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Case 83.3 °C/mW   Temperature Range, Junction, Operating -55 to +150 °C  NTE Electronics, Inc. Temperature Range, Junction, Operating -55 to +150 °C  Bipolar Transistors Temperature Range, Junction, Operating -55 to +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature Range, Junction, Operating -55 to +150 °C   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  Bipolar Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Temperature, Operating, Range -55 to +150 °C  Bipolar Transistors Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 200 °C/mW  NTE Electronics, Inc. Thermal Resistance, Junction to Ambient 200 °C/mW  Bipolar Transistors Thermal Resistance, Junction to Ambient 200 °C/mW  NTE Electronics, Inc. Bipolar Transistors Thermal Resistance, Junction to Ambient 200 °C/mW   Transistor Polarity NPN  NTE Electronics, Inc. Transistor Polarity NPN  Bipolar Transistors Transistor Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Polarity NPN   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type General Purpose, High Voltage  NTE Electronics, Inc. Type General Purpose, High Voltage  Bipolar Transistors Type General Purpose, High Voltage  NTE Electronics, Inc. Bipolar Transistors Type General Purpose, High Voltage   Voltage, Breakdown, Collector to Emitter 300 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 300 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 300 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 300 V   Voltage, Collector to Base 300 V  NTE Electronics, Inc. Voltage, Collector to Base 300 V  Bipolar Transistors Voltage, Collector to Base 300 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 300 V   Voltage, Collector to Emitter 300 V  NTE Electronics, Inc. Voltage, Collector to Emitter 300 V  Bipolar Transistors Voltage, Collector to Emitter 300 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 300 V   Voltage, Collector to Emitter, Saturation 0.5 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 0.5 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.5 V   Voltage, Emitter to Base 6 V  NTE Electronics, Inc. Voltage, Emitter to Base 6 V  Bipolar Transistors Voltage, Emitter to Base 6 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 6 V   Voltage, Saturation, Base to Emitter 0.9 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 0.9 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 0.9 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 0.9 V   Width 0.165" (4.2mm)  NTE Electronics, Inc. Width 0.165" (4.2mm)  Bipolar Transistors Width 0.165" (4.2mm)  NTE Electronics, Inc. Bipolar Transistors Width 0.165" (4.2mm)  
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