NTE312产品概述
N-Channel Silicon Junction Field Effect Transistor (JFET)
High power gain is 10 dB (M") @ 400MHz High transconductance is 4000 μmho (M") @ 400MHz Drain and gate leads separated for high maximum stable gain For use in VHF amplifiers in fm, tv, and mobile communications equipment
This is a field effect transistor designed for VHF amplifier and mixer applications. It comes in a TO-92 package.