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Audio Frequency Driver, Silicon Complementaryyy Transistors

Brand/Series	Transistor Series
Complement to	PNP
Configuration	Common Base
Current, Collector	1 A
Current, Continuous Collector	1 A (Max.)
Current, Gain	320
Device Dissipation	0.9 W
Dimensions	3.0 x 5.0 x 8.73 mm
Frequency, Operating	140 MHz
Gain, DC Current, Minimum	160
Height	0.344" (8.73mm)
Length	0.118" (3mm)
Material	Si
Material Type	Silicon
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	3
Package Type	R-245
Polarity	NPN
Power Dissipation	900 mW
Primary Type	Si
Temperature Range, Junction, Operating	150°C (Max.)
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Transistor Polarity	NPN
Transistor Type	NPN
Type	Driver
Voltage, Base to Emitter	1.5 V (Max.)
Voltage, Breakdown, Collector to Emitter	100 V
Voltage, Collector to Base	120 V
Voltage, Collector to Emitter	100 V
Voltage, Collector to Emitter, Saturation	1 V
Voltage, Emitter to Base	5 V
Voltage, Saturation, Collector to Emitter	1.0 V (Max.)
Width	0.197" (5mm)
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• ON Semiconductor
  Transistor, Bipolar; NPN Bipolar; Silicon; TO-220; 250; 250; 5; 8 Adc Collector
  
  型号：MJE15032G
  仓库库存编号：70099654
  
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• ON Semiconductor
  Transistor; PNP; 250 VDC (Max.); 250 VDC (Max.); 5.0 VDC (Max.); 10 HFE Min.PBF
  
  型号：MJE15033G
  仓库库存编号：70099655
  
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• Amphenol Industrial
  connector comp, shell only, metal circular, wall receptacle, size 28, clear finish
  
  型号：97-3100A-28(639)(0850)
  仓库库存编号：70141148
  
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• Mallory Sonalert
  Speaker; 0.2Watts; 85dB; 1.3kHz; 30x13.5mm; PC Pins
  
  型号：PB-2712PQ
  仓库库存编号：70186654
  
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• NTE Electronics, Inc.
  T-NPN SI GENERAL PURP AMP
  
  型号：NTE85
  仓库库存编号：70214641
  
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• NTE Electronics, Inc.
  TRANSISTOR PNP SILICON 100V IC=0.5A TO-92 CASE AUDIO POWER AMP COMP'L TO NTE289A
  
  型号：NTE290A
  仓库库存编号：70215753
  
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• NTE Electronics, Inc.
  T-NPN SI AF DRIVER
  
  型号：NTE373
  仓库库存编号：70215762
  
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• NTE Electronics, Inc.
  T-PNP SI AF DRIVER
  
  型号：NTE374
  仓库库存编号：70215763
  
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• NTE Electronics, Inc.
  T-PNP SI AF DRIVER
  
  型号：NTE383
  仓库库存编号：70215769
  
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Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Complement to PNP  NTE Electronics, Inc. Complement to PNP  Bipolar Transistors Complement to PNP  NTE Electronics, Inc. Bipolar Transistors Complement to PNP   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 1 A  NTE Electronics, Inc. Current, Collector 1 A  Bipolar Transistors Current, Collector 1 A  NTE Electronics, Inc. Bipolar Transistors Current, Collector 1 A   Current, Continuous Collector 1 A (Max.)  NTE Electronics, Inc. Current, Continuous Collector 1 A (Max.)  Bipolar Transistors Current, Continuous Collector 1 A (Max.)  NTE Electronics, Inc. Bipolar Transistors Current, Continuous Collector 1 A (Max.)   Current, Gain 320  NTE Electronics, Inc. Current, Gain 320  Bipolar Transistors Current, Gain 320  NTE Electronics, Inc. Bipolar Transistors Current, Gain 320   Device Dissipation 0.9 W  NTE Electronics, Inc. Device Dissipation 0.9 W  Bipolar Transistors Device Dissipation 0.9 W  NTE Electronics, Inc. Bipolar Transistors Device Dissipation 0.9 W   Dimensions 3.0 x 5.0 x 8.73 mm  NTE Electronics, Inc. Dimensions 3.0 x 5.0 x 8.73 mm  Bipolar Transistors Dimensions 3.0 x 5.0 x 8.73 mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 3.0 x 5.0 x 8.73 mm   Frequency, Operating 140 MHz  NTE Electronics, Inc. Frequency, Operating 140 MHz  Bipolar Transistors Frequency, Operating 140 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 140 MHz   Gain, DC Current, Minimum 160  NTE Electronics, Inc. Gain, DC Current, Minimum 160  Bipolar Transistors Gain, DC Current, Minimum 160  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 160   Height 0.344" (8.73mm)  NTE Electronics, Inc. Height 0.344" (8.73mm)  Bipolar Transistors Height 0.344" (8.73mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.344" (8.73mm)   Length 0.118" (3mm)  NTE Electronics, Inc. Length 0.118" (3mm)  Bipolar Transistors Length 0.118" (3mm)  NTE Electronics, Inc. Bipolar Transistors Length 0.118" (3mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Material Type Silicon  NTE Electronics, Inc. Material Type Silicon  Bipolar Transistors Material Type Silicon  NTE Electronics, Inc. Bipolar Transistors Material Type Silicon   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type R-245  NTE Electronics, Inc. Package Type R-245  Bipolar Transistors Package Type R-245  NTE Electronics, Inc. Bipolar Transistors Package Type R-245   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 900 mW  NTE Electronics, Inc. Power Dissipation 900 mW  Bipolar Transistors Power Dissipation 900 mW  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 900 mW   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Temperature Range, Junction, Operating 150°C (Max.)  NTE Electronics, Inc. Temperature Range, Junction, Operating 150°C (Max.)  Bipolar Transistors Temperature Range, Junction, Operating 150°C (Max.)  NTE Electronics, Inc. Bipolar Transistors Temperature Range, Junction, Operating 150°C (Max.)   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  Bipolar Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Temperature, Operating, Range -55 to +150 °C  Bipolar Transistors Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -55 to +150 °C   Transistor Polarity NPN  NTE Electronics, Inc. Transistor Polarity NPN  Bipolar Transistors Transistor Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Polarity NPN   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type Driver  NTE Electronics, Inc. Type Driver  Bipolar Transistors Type Driver  NTE Electronics, Inc. Bipolar Transistors Type Driver   Voltage, Base to Emitter 1.5 V (Max.)  NTE Electronics, Inc. Voltage, Base to Emitter 1.5 V (Max.)  Bipolar Transistors Voltage, Base to Emitter 1.5 V (Max.)  NTE Electronics, Inc. Bipolar Transistors Voltage, Base to Emitter 1.5 V (Max.)   Voltage, Breakdown, Collector to Emitter 100 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 100 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 100 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 100 V   Voltage, Collector to Base 120 V  NTE Electronics, Inc. Voltage, Collector to Base 120 V  Bipolar Transistors Voltage, Collector to Base 120 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 120 V   Voltage, Collector to Emitter 100 V  NTE Electronics, Inc. Voltage, Collector to Emitter 100 V  Bipolar Transistors Voltage, Collector to Emitter 100 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 100 V   Voltage, Collector to Emitter, Saturation 1 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 1 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 1 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 1 V   Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Voltage, Emitter to Base 5 V  Bipolar Transistors Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 5 V   Voltage, Saturation, Collector to Emitter 1.0 V (Max.)  NTE Electronics, Inc. Voltage, Saturation, Collector to Emitter 1.0 V (Max.)  Bipolar Transistors Voltage, Saturation, Collector to Emitter 1.0 V (Max.)  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Collector to Emitter 1.0 V (Max.)   Width 0.197" (5mm)  NTE Electronics, Inc. Width 0.197" (5mm)  Bipolar Transistors Width 0.197" (5mm)  NTE Electronics, Inc. Bipolar Transistors Width 0.197" (5mm)