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NTE383 - 

T-PNP SI AF DRIVER

NTE Electronics, Inc. NTE383
声明：图片仅供参考，请以实物为准！
制造商产品编号：
NTE383
仓库库存编号：
70215769
技术数据表：
View NTE383 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

NTE383产品概述

Audio Frequency Driver, Silicon Complementaryyy Transistors

NTE383产品信息

  Brand/Series  Transistor Series  
  Complement to  NPN  
  Configuration  Common Base  
  Current, Collector  1 A  
  Current, Continuous Collector  1 A (Max.)  
  Current, Gain  320  
  Dimensions  3.0 x 5.0 x 8.73 mm  
  Frequency, Operating  140 MHz  
  Gain, DC Current, Minimum  160  
  Height  0.344" (8.73mm)  
  Length  0.118" (3mm)  
  Material  Si  
  Material Type  Silicon  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  R-245  
  Polarity  PNP  
  Power Dissipation  900 mW  
  Primary Type  Si  
  Temperature Range, Junction, Operating  150°C (Max.)  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Transistor Polarity  PNP  
  Transistor Type  PNP  
  Type  Driver  
  Voltage, Base to Emitter  1.5 V (Max.)  
  Voltage, Breakdown, Collector to Emitter  100 V  
  Voltage, Collector to Base  120 V  
  Voltage, Collector to Emitter  100 V  
  Voltage, Collector to Emitter, Saturation  1 V  
  Voltage, Emitter to Base  5 V  
  Voltage, Saturation, Collector to Emitter  1.0 V (Max.)  
  Width  0.197" (5mm)  
关键词         

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Current, Gain 320  NTE Electronics, Inc. Current, Gain 320  Bipolar Transistors Current, Gain 320  NTE Electronics, Inc. Bipolar Transistors Current, Gain 320   Dimensions 3.0 x 5.0 x 8.73 mm  NTE Electronics, Inc. Dimensions 3.0 x 5.0 x 8.73 mm  Bipolar Transistors Dimensions 3.0 x 5.0 x 8.73 mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 3.0 x 5.0 x 8.73 mm   Frequency, Operating 140 MHz  NTE Electronics, Inc. Frequency, Operating 140 MHz  Bipolar Transistors Frequency, Operating 140 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 140 MHz   Gain, DC Current, Minimum 160  NTE Electronics, Inc. Gain, DC Current, Minimum 160  Bipolar Transistors Gain, DC Current, Minimum 160  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 160   Height 0.344" (8.73mm)  NTE Electronics, Inc. Height 0.344" (8.73mm)  Bipolar Transistors Height 0.344" (8.73mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.344" (8.73mm)   Length 0.118" (3mm)  NTE Electronics, Inc. Length 0.118" (3mm)  Bipolar Transistors Length 0.118" (3mm)  NTE Electronics, Inc. Bipolar Transistors Length 0.118" (3mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Material Type Silicon  NTE Electronics, Inc. Material Type Silicon  Bipolar Transistors Material Type Silicon  NTE Electronics, Inc. Bipolar Transistors Material Type Silicon   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type R-245  NTE Electronics, Inc. Package Type R-245  Bipolar Transistors Package Type R-245  NTE Electronics, Inc. Bipolar Transistors Package Type R-245   Polarity PNP  NTE Electronics, Inc. Polarity PNP  Bipolar Transistors Polarity PNP  NTE Electronics, Inc. Bipolar Transistors Polarity PNP   Power Dissipation 900 mW  NTE Electronics, Inc. Power Dissipation 900 mW  Bipolar Transistors Power Dissipation 900 mW  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 900 mW   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Temperature Range, Junction, Operating 150°C (Max.)  NTE Electronics, Inc. Temperature Range, Junction, Operating 150°C (Max.)  Bipolar Transistors Temperature Range, Junction, Operating 150°C (Max.)  NTE Electronics, Inc. Bipolar Transistors Temperature Range, Junction, Operating 150°C (Max.)   Temperature, Operating, 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Transistors Transistor Type PNP  NTE Electronics, Inc. Bipolar Transistors Transistor Type PNP   Type Driver  NTE Electronics, Inc. Type Driver  Bipolar Transistors Type Driver  NTE Electronics, Inc. Bipolar Transistors Type Driver   Voltage, Base to Emitter 1.5 V (Max.)  NTE Electronics, Inc. Voltage, Base to Emitter 1.5 V (Max.)  Bipolar Transistors Voltage, Base to Emitter 1.5 V (Max.)  NTE Electronics, Inc. Bipolar Transistors Voltage, Base to Emitter 1.5 V (Max.)   Voltage, Breakdown, Collector to Emitter 100 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 100 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 100 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 100 V   Voltage, Collector to Base 120 V  NTE Electronics, Inc. Voltage, Collector to Base 120 V  Bipolar Transistors Voltage, Collector to Base 120 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 120 V   Voltage, Collector to Emitter 100 V  NTE Electronics, Inc. Voltage, Collector to Emitter 100 V  Bipolar Transistors Voltage, Collector to Emitter 100 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 100 V   Voltage, Collector to Emitter, Saturation 1 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 1 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 1 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 1 V   Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Voltage, Emitter to Base 5 V  Bipolar Transistors Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 5 V   Voltage, Saturation, Collector to Emitter 1.0 V (Max.)  NTE Electronics, Inc. Voltage, Saturation, Collector to Emitter 1.0 V (Max.)  Bipolar Transistors Voltage, Saturation, Collector to Emitter 1.0 V (Max.)  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Collector to Emitter 1.0 V (Max.)   Width 0.197" (5mm)  NTE Electronics, Inc. Width 0.197" (5mm)  Bipolar Transistors Width 0.197" (5mm)  NTE Electronics, Inc. Bipolar Transistors Width 0.197" (5mm)  
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