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Silicon NPN Transistors

Brand/Series	Transistor Series
Configuration	Common Base
Current, Collector	7 A
Current, Continuous Collector	7 A
Device Dissipation	45 W
Diameter	12.3 mm
Dimensions	12.3 Dia. x 7.5 H mm
Frequency, Operating	1 MHz
Gain, DC Current, Maximum	50
Gain, DC Current, Minimum	12
Height	0.295" (7.5mm)
Material	Si
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	3
Package Type	TO-66
Polarity	NPN
Power Dissipation	45 W
Primary Type	Si
Resistance, Thermal, Junction to Case	3.9 °C/W
Temperature Range, Junction, Operating	-65 to 200 °C
Temperature, Operating, Maximum	+200 °C
Temperature, Operating, Minimum	-65 °C
Temperature, Operating, Range	-65 to +200 °C
Transistor Polarity	NPN
Transistor Type	NPN
Type	Amplifier, High Voltage
Voltage, Breakdown, Collector to Emitter	350 V
Voltage, Collector to Base	375 V
Voltage, Collector to Emitter	350 V
Voltage, Collector to Emitter, Saturation	2 V
Voltage, Emitter to Base	9 V
Voltage, Saturation, Base to Emitter	1.6 V
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• HVCA
  Bridge Rectifier; 600V; 150A; 420V; 6A
  
  型号：KBPC606
  仓库库存编号：70016012
  
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• Ohmite
  Resistor; Carbon Film; Res 10 Kilohms; Pwr-Rtg 0.25 W; Tol 5%; Axial; Cer-Core
  
  型号：OK1035E
  仓库库存编号：70022898
  
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• Ohmite
  Resistor; Carbon Film; Res 10 Kilohms; Pwr-Rtg 0.25 W; Tol 5%; Axial; Cer-Core
  
  型号：OK1035E
  仓库库存编号：70022898
  
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• Ohmite
  Resistor; Carbon Film; Res 10 Kilohms; Pwr-Rtg 0.25 W; Tol 5%; Axial; Cer-Core
  
  型号：OK1035E
  仓库库存编号：70022898
  
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• NTE Electronics, Inc.
  TRANSISTOR PNP SILICON 90V IC=4A TO-66 CASE AUDIO POWER OUTPUT
  
  型号：NTE218
  仓库库存编号：70214624
  
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Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 7 A  NTE Electronics, Inc. Current, Collector 7 A  Bipolar Transistors Current, Collector 7 A  NTE Electronics, Inc. Bipolar Transistors Current, Collector 7 A   Current, Continuous Collector 7 A  NTE Electronics, Inc. Current, Continuous Collector 7 A  Bipolar Transistors Current, Continuous Collector 7 A  NTE Electronics, Inc. Bipolar Transistors Current, Continuous Collector 7 A   Device Dissipation 45 W  NTE Electronics, Inc. Device Dissipation 45 W  Bipolar Transistors Device Dissipation 45 W  NTE Electronics, Inc. Bipolar Transistors Device Dissipation 45 W   Diameter 12.3 mm  NTE Electronics, Inc. Diameter 12.3 mm  Bipolar Transistors Diameter 12.3 mm  NTE Electronics, Inc. Bipolar Transistors Diameter 12.3 mm   Dimensions 12.3 Dia. x 7.5 H mm  NTE Electronics, Inc. Dimensions 12.3 Dia. x 7.5 H mm  Bipolar Transistors Dimensions 12.3 Dia. x 7.5 H mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 12.3 Dia. x 7.5 H mm   Frequency, Operating 1 MHz  NTE Electronics, Inc. Frequency, Operating 1 MHz  Bipolar Transistors Frequency, Operating 1 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 1 MHz   Gain, DC Current, Maximum 50  NTE Electronics, Inc. Gain, DC Current, Maximum 50  Bipolar Transistors Gain, DC Current, Maximum 50  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Maximum 50   Gain, DC Current, Minimum 12  NTE Electronics, Inc. Gain, DC Current, Minimum 12  Bipolar Transistors Gain, DC Current, Minimum 12  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 12   Height 0.295" (7.5mm)  NTE Electronics, Inc. Height 0.295" (7.5mm)  Bipolar Transistors Height 0.295" (7.5mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.295" (7.5mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-66  NTE Electronics, Inc. Package Type TO-66  Bipolar Transistors Package Type TO-66  NTE Electronics, Inc. Bipolar Transistors Package Type TO-66   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 45 W  NTE Electronics, Inc. Power Dissipation 45 W  Bipolar Transistors Power Dissipation 45 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 45 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 3.9 °C/W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 3.9 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 3.9 °C/W  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Case 3.9 °C/W   Temperature Range, Junction, Operating -65 to 200 °C  NTE Electronics, Inc. Temperature Range, Junction, Operating -65 to 200 °C  Bipolar Transistors Temperature Range, Junction, Operating -65 to 200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature Range, Junction, Operating -65 to 200 °C   Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +200 °C  Bipolar Transistors Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +200 °C   Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Temperature, Operating, Range -65 to +200 °C  Bipolar Transistors Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -65 to +200 °C   Transistor Polarity NPN  NTE Electronics, Inc. Transistor Polarity NPN  Bipolar Transistors Transistor Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Polarity NPN   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type Amplifier, High Voltage  NTE Electronics, Inc. Type Amplifier, High Voltage  Bipolar Transistors Type Amplifier, High Voltage  NTE Electronics, Inc. Bipolar Transistors Type Amplifier, High Voltage   Voltage, Breakdown, Collector to Emitter 350 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 350 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 350 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 350 V   Voltage, Collector to Base 375 V  NTE Electronics, Inc. Voltage, Collector to Base 375 V  Bipolar Transistors Voltage, Collector to Base 375 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 375 V   Voltage, Collector to Emitter 350 V  NTE Electronics, Inc. Voltage, Collector to Emitter 350 V  Bipolar Transistors Voltage, Collector to Emitter 350 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 350 V   Voltage, Collector to Emitter, Saturation 2 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 2 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 2 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 2 V   Voltage, Emitter to Base 9 V  NTE Electronics, Inc. Voltage, Emitter to Base 9 V  Bipolar Transistors Voltage, Emitter to Base 9 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 9 V   Voltage, Saturation, Base to Emitter 1.6 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 1.6 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 1.6 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 1.6 V