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Silicon NPN Transistor Audio Power Amp, -65 to +200°C, TO3 Package

Fast turn-off times
Designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switch mode applications.

Brand/Series	Transistor Series
Complement to	PNP
Configuration	Common Base
Current, Collector	5 A
Current, Gain	8
Device Dissipation	175 W
Diameter	22.2 mm
Dimensions	22.2 Dia. x 8.89 H mm
Gain, DC Current, Minimum	8
Height	0.35" (8.89mm)
Material	Si
Material Type	Silicon
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	3
Package Type	TO-3
Polarity	NPN
Power Dissipation	175 W
Primary Type	Si
Resistance, Thermal, Junction to Case	1 °C/W
Temperature, Operating, Maximum	+200 °C
Temperature, Operating, Minimum	-65 °C
Temperature, Operating, Range	-65 to +200 °C
Transistor Polarity	NPN
Transistor Type	NPN
Type	Audio Amplifier, Power
Voltage, Breakdown, Collector to Emitter	400 V
Voltage, Collector to Emitter	400 V
Voltage, Collector to Emitter, Saturation	2 V
Voltage, Emitter to Base	7 V
Voltage, Saturation, Base to Emitter	1.6 V
Voltage, Saturation, Collector to Emitter	1.5 V
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• Amphenol Industrial
  connector comp, shell only, metal circular, box recept, no bkshl, size 32, olive drab
  
  型号：97-3102A-32(0850)
  仓库库存编号：70141298
  
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• Amphenol Industrial
  connector comp, shell only, metal circular, str plug, solid bkshl, size 32, olive drab
  
  型号：97-3106A-32(0850)
  仓库库存编号：70141310
  
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• Amphenol Industrial
  connector comp, insert only, size 32, blueinsul, 6#12 & 24#16 solder cup pin cont
  
  型号：97-32-8P
  仓库库存编号：70141436
  
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• Amphenol Industrial
  connector comp, insert only, size 32, blueinsul, 6#12&24#16 solder cup socket cont
  
  型号：97-32-8S
  仓库库存编号：70141437
  
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• NTE Electronics, Inc.
  TRANSISTOR NPN SILICON 70V IC-0.1A LO NOISE HI-GAIN PRE-AMP
  
  型号：NTE199
  仓库库存编号：70214932
  
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• Triad Magnetics
  Transformer; Isolation; Pri:115 to 230VAC, Sec:115VAC; 50/60Hz; 50VA; 1500Vrms
  
  型号：N-68X
  仓库库存编号：70218526
  
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Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Complement to PNP  NTE Electronics, Inc. Complement to PNP  Bipolar Transistors Complement to PNP  NTE Electronics, Inc. Bipolar Transistors Complement to PNP   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 5 A  NTE Electronics, Inc. Current, Collector 5 A  Bipolar Transistors Current, Collector 5 A  NTE Electronics, Inc. Bipolar Transistors Current, Collector 5 A   Current, Gain 8  NTE Electronics, Inc. Current, Gain 8  Bipolar Transistors Current, Gain 8  NTE Electronics, Inc. Bipolar Transistors Current, Gain 8   Device Dissipation 175 W  NTE Electronics, Inc. Device Dissipation 175 W  Bipolar Transistors Device Dissipation 175 W  NTE Electronics, Inc. Bipolar Transistors Device Dissipation 175 W   Diameter 22.2 mm  NTE Electronics, Inc. Diameter 22.2 mm  Bipolar Transistors Diameter 22.2 mm  NTE Electronics, Inc. Bipolar Transistors Diameter 22.2 mm   Dimensions 22.2 Dia. x 8.89 H mm  NTE Electronics, Inc. Dimensions 22.2 Dia. x 8.89 H mm  Bipolar Transistors Dimensions 22.2 Dia. x 8.89 H mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 22.2 Dia. x 8.89 H mm   Gain, DC Current, Minimum 8  NTE Electronics, Inc. Gain, DC Current, Minimum 8  Bipolar Transistors Gain, DC Current, Minimum 8  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 8   Height 0.35" (8.89mm)  NTE Electronics, Inc. Height 0.35" (8.89mm)  Bipolar Transistors Height 0.35" (8.89mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.35" (8.89mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Material Type Silicon  NTE Electronics, Inc. Material Type Silicon  Bipolar Transistors Material Type Silicon  NTE Electronics, Inc. Bipolar Transistors Material Type Silicon   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-3  NTE Electronics, Inc. Package Type TO-3  Bipolar Transistors Package Type TO-3  NTE Electronics, Inc. Bipolar Transistors Package Type TO-3   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 175 W  NTE Electronics, Inc. Power Dissipation 175 W  Bipolar Transistors Power Dissipation 175 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 175 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 1 °C/W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 1 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 1 °C/W  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Case 1 °C/W   Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +200 °C  Bipolar Transistors Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +200 °C   Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Temperature, Operating, Range -65 to +200 °C  Bipolar Transistors Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -65 to +200 °C   Transistor Polarity NPN  NTE Electronics, Inc. Transistor Polarity NPN  Bipolar Transistors Transistor Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Polarity NPN   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type Audio Amplifier, Power  NTE Electronics, Inc. Type Audio Amplifier, Power  Bipolar Transistors Type Audio Amplifier, Power  NTE Electronics, Inc. Bipolar Transistors Type Audio Amplifier, Power   Voltage, Breakdown, Collector to Emitter 400 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 400 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 400 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 400 V   Voltage, Collector to Emitter 400 V  NTE Electronics, Inc. Voltage, Collector to Emitter 400 V  Bipolar Transistors Voltage, Collector to Emitter 400 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 400 V   Voltage, Collector to Emitter, Saturation 2 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 2 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 2 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 2 V   Voltage, Emitter to Base 7 V  NTE Electronics, Inc. Voltage, Emitter to Base 7 V  Bipolar Transistors Voltage, Emitter to Base 7 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 7 V   Voltage, Saturation, Base to Emitter 1.6 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 1.6 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 1.6 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 1.6 V   Voltage, Saturation, Collector to Emitter 1.5 V  NTE Electronics, Inc. Voltage, Saturation, Collector to Emitter 1.5 V  Bipolar Transistors Voltage, Saturation, Collector to Emitter 1.5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Collector to Emitter 1.5 V