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Silicon Complementary Transistors, -65 to +150°C Operating Junction Temperature

Brand/Series	Transistor Series
Configuration	Common Base
Current, Collector	25 A
Current, Gain	75
Device Dissipation	125 W
Dimensions	15.24 x 4.4 x 13.97 mm
Frequency, Operating	3 MHz
Gain, DC Current, Maximum	75
Gain, DC Current, Minimum	15
Height	0.55" (13.97mm)
Length	0.6" (15.24mm)
Material	Si
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	3
Package Type	TO-218
Polarity	NPN
Power Dissipation	125 W
Primary Type	Si
Resistance, Thermal, Junction to Case	1 °C/W
Temperature, Junction, Operating	-65 to 150 °C
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-65 °C
Temperature, Operating, Range	-65 to +150 °C
Thermal Resistance, Junction to Ambient	35.7 °C⁄W
Transistor Polarity	NPN
Transistor Type	NPN
Type	Amplifier, Power
Voltage, Breakdown, Collector to Emitter	100 V
Voltage, Collector to Base	100 V
Voltage, Collector to Emitter	100 V
Voltage, Collector to Emitter, Saturation	4 V
Voltage, Emitter to Base	5 V
Width	0.173" (4.4mm)
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• Siliconix / Vishay
  MOSFET; N-Ch; VDSS 40V; RDS(ON) 0.0075Ohm; ID 40A; TO-252; PD 71W; VGS +/-20V; gFS 40S
  
  型号：SUD40N04-10A-E3
  仓库库存编号：70026132
  
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• L-com Connectivity
  Adapter; USB Type B - Type A A; USB; EMI/RFI
  
  型号：ECF504-BAS
  仓库库存编号：70126196
  
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• NTE Electronics, Inc.
  TRANSISTOR PNP SILICON 90V IC=4A TO-220AUDIO POWER AMP MEDIUM SPEED SWITCH
  
  型号：NTE153
  仓库库存编号：70214891
  
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• NTE Electronics, Inc.
  TRANSISTOR NPN SILICON 100V IC=15A TO-220 CASE COMP'L TO NTE332 AUDIO POWER AMP
  
  型号：NTE331
  仓库库存编号：70215760
  
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• NTE Electronics, Inc.
  T-PNP SI PWR AMP
  
  型号：NTE393
  仓库库存编号：70215901
  
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Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 25 A  NTE Electronics, Inc. Current, Collector 25 A  Bipolar Transistors Current, Collector 25 A  NTE Electronics, Inc. Bipolar Transistors Current, Collector 25 A   Current, Gain 75  NTE Electronics, Inc. Current, Gain 75  Bipolar Transistors Current, Gain 75  NTE Electronics, Inc. Bipolar Transistors Current, Gain 75   Device Dissipation 125 W  NTE Electronics, Inc. Device Dissipation 125 W  Bipolar Transistors Device Dissipation 125 W  NTE Electronics, Inc. Bipolar Transistors Device Dissipation 125 W   Dimensions 15.24 x 4.4 x 13.97 mm  NTE Electronics, Inc. Dimensions 15.24 x 4.4 x 13.97 mm  Bipolar Transistors Dimensions 15.24 x 4.4 x 13.97 mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 15.24 x 4.4 x 13.97 mm   Frequency, Operating 3 MHz  NTE Electronics, Inc. Frequency, Operating 3 MHz  Bipolar Transistors Frequency, Operating 3 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 3 MHz   Gain, DC Current, Maximum 75  NTE Electronics, Inc. Gain, DC Current, Maximum 75  Bipolar Transistors Gain, DC Current, Maximum 75  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Maximum 75   Gain, DC Current, Minimum 15  NTE Electronics, Inc. Gain, DC Current, Minimum 15  Bipolar Transistors Gain, DC Current, Minimum 15  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 15   Height 0.55" (13.97mm)  NTE Electronics, Inc. Height 0.55" (13.97mm)  Bipolar Transistors Height 0.55" (13.97mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.55" (13.97mm)   Length 0.6" (15.24mm)  NTE Electronics, Inc. Length 0.6" (15.24mm)  Bipolar Transistors Length 0.6" (15.24mm)  NTE Electronics, Inc. Bipolar Transistors Length 0.6" (15.24mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-218  NTE Electronics, Inc. Package Type TO-218  Bipolar Transistors Package Type TO-218  NTE Electronics, Inc. Bipolar Transistors Package Type TO-218   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 125 W  NTE Electronics, Inc. Power Dissipation 125 W  Bipolar Transistors Power Dissipation 125 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 125 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 1 °C/W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 1 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 1 °C/W  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Case 1 °C/W   Temperature, Junction, Operating -65 to 150 °C  NTE Electronics, Inc. Temperature, Junction, Operating -65 to 150 °C  Bipolar Transistors Temperature, Junction, Operating -65 to 150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Junction, Operating -65 to 150 °C   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +150 °C  NTE Electronics, Inc. Temperature, Operating, Range -65 to +150 °C  Bipolar Transistors Temperature, Operating, Range -65 to +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -65 to +150 °C   Thermal Resistance, Junction to Ambient 35.7 °C⁄W  NTE Electronics, Inc. Thermal Resistance, Junction to Ambient 35.7 °C⁄W  Bipolar Transistors Thermal Resistance, Junction to Ambient 35.7 °C⁄W  NTE Electronics, Inc. Bipolar Transistors Thermal Resistance, Junction to Ambient 35.7 °C⁄W   Transistor Polarity NPN  NTE Electronics, Inc. Transistor Polarity NPN  Bipolar Transistors Transistor Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Polarity NPN   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type Amplifier, Power  NTE Electronics, Inc. Type Amplifier, Power  Bipolar Transistors Type Amplifier, Power  NTE Electronics, Inc. Bipolar Transistors Type Amplifier, Power   Voltage, Breakdown, Collector to Emitter 100 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 100 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 100 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 100 V   Voltage, Collector to Base 100 V  NTE Electronics, Inc. Voltage, Collector to Base 100 V  Bipolar Transistors Voltage, Collector to Base 100 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 100 V   Voltage, Collector to Emitter 100 V  NTE Electronics, Inc. Voltage, Collector to Emitter 100 V  Bipolar Transistors Voltage, Collector to Emitter 100 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 100 V   Voltage, Collector to Emitter, Saturation 4 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 4 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 4 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 4 V   Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Voltage, Emitter to Base 5 V  Bipolar Transistors Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 5 V   Width 0.173" (4.4mm)  NTE Electronics, Inc. Width 0.173" (4.4mm)  Bipolar Transistors Width 0.173" (4.4mm)  NTE Electronics, Inc. Bipolar Transistors Width 0.173" (4.4mm)