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NTE490 - 

MOSFET N-CHAN ENHANC

NTE Electronics, Inc. NTE490
声明：图片仅供参考，请以实物为准！
制造商产品编号：
NTE490
仓库库存编号：
70214821
技术数据表：
View NTE490 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

NTE490产品概述

N-Channel Enhancement Mode Power MOSFET, Drain-Source Breakdown Voltage 60 V (Min.)
  • 500 mA drain current
  • -55 to +150 °C operating and storage temperature
    0.500 in. (Min.) lead length, 0.021 in. maximum lead diameter and 350 mW power dissipation at +25 °C.

    • NTE490产品信息

      Brand/Series  MOSFET Series  
      Capacitance, Input  Maximum of 60 pF @ 10 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  500 mA  
      Dimensions  5.2 x 4.2 x 5.33 mm  
      Height  0.21" (5.33mm)  
      Length  0.204" (5.2mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  -55 to +150 °C  
      Package Type  TO-92  
      Polarization  N-Channel  
      Power Dissipation  350 mW  
      Resistance, Drain to Source On  5 Ω  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Time, Turn-Off Delay  4 ns  
      Time, Turn-On Delay  4 ns  
      Transconductance, Forward  200 S  
      Voltage, Breakdown, Drain to Source  90 V  
      Voltage, Drain to Source  90 V  
      Voltage, Gate to Source  ±20 V  
      Width  0.165" (4.2mm)  
    关键词         

    NTE490相关搜索

    Brand/Series MOSFET Series  NTE Electronics, Inc. Brand/Series MOSFET Series  MOSFET Transistors Brand/Series MOSFET Series  NTE Electronics, Inc. MOSFET Transistors Brand/Series MOSFET Series   Capacitance, Input Maximum of 60 pF @ 10 V  NTE Electronics, Inc. Capacitance, Input Maximum of 60 pF @ 10 V  MOSFET Transistors Capacitance, Input Maximum of 60 pF @ 10 V  NTE Electronics, Inc. MOSFET Transistors Capacitance, Input Maximum of 60 pF @ 10 V   Channel Mode Enhancement  NTE Electronics, Inc. Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  NTE Electronics, Inc. MOSFET Transistors Channel Mode Enhancement   Channel Type N  NTE Electronics, Inc. Channel Type N  MOSFET Transistors Channel Type N  NTE Electronics, Inc. MOSFET Transistors Channel Type N   Configuration Single  NTE Electronics, Inc. Configuration Single  MOSFET Transistors Configuration Single  NTE Electronics, Inc. MOSFET Transistors Configuration Single   Current, Drain 500 mA  NTE Electronics, Inc. Current, Drain 500 mA  MOSFET Transistors Current, Drain 500 mA  NTE Electronics, Inc. MOSFET Transistors Current, Drain 500 mA   Dimensions 5.2 x 4.2 x 5.33 mm  NTE Electronics, Inc. Dimensions 5.2 x 4.2 x 5.33 mm  MOSFET Transistors Dimensions 5.2 x 4.2 x 5.33 mm  NTE Electronics, Inc. MOSFET Transistors Dimensions 5.2 x 4.2 x 5.33 mm   Height 0.21" (5.33mm)  NTE Electronics, Inc. Height 0.21" (5.33mm)  MOSFET Transistors Height 0.21" (5.33mm)  NTE Electronics, Inc. MOSFET Transistors Height 0.21" (5.33mm)   Length 0.204" (5.2mm)  NTE Electronics, Inc. Length 0.204" (5.2mm)  MOSFET Transistors Length 0.204" (5.2mm)  NTE Electronics, Inc. MOSFET Transistors Length 0.204" (5.2mm)   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  NTE Electronics, Inc. MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  NTE Electronics, Inc. MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  MOSFET Transistors Number of Pins 3  NTE Electronics, Inc. MOSFET Transistors Number of Pins 3   Operating and Storage Temperature -55 to +150 °C  NTE Electronics, Inc. Operating and Storage Temperature -55 to +150 °C  MOSFET Transistors Operating and Storage Temperature -55 to +150 °C  NTE Electronics, Inc. MOSFET Transistors Operating and Storage Temperature -55 to +150 °C   Package Type TO-92  NTE Electronics, Inc. Package Type TO-92  MOSFET Transistors Package Type TO-92  NTE Electronics, Inc. MOSFET Transistors Package Type TO-92   Polarization N-Channel  NTE Electronics, Inc. Polarization N-Channel  MOSFET Transistors Polarization N-Channel  NTE Electronics, Inc. MOSFET Transistors Polarization N-Channel   Power Dissipation 350 mW  NTE Electronics, Inc. Power Dissipation 350 mW  MOSFET Transistors Power Dissipation 350 mW  NTE Electronics, Inc. MOSFET Transistors Power Dissipation 350 mW   Resistance, Drain to Source On 5 Ω  NTE Electronics, Inc. Resistance, Drain to Source On 5 Ω  MOSFET Transistors Resistance, Drain to Source On 5 Ω  NTE Electronics, Inc. MOSFET Transistors Resistance, Drain to Source On 5 Ω   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 4 ns  NTE Electronics, Inc. Time, Turn-Off Delay 4 ns  MOSFET Transistors Time, Turn-Off Delay 4 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-Off Delay 4 ns   Time, Turn-On Delay 4 ns  NTE Electronics, Inc. Time, Turn-On Delay 4 ns  MOSFET Transistors Time, Turn-On Delay 4 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-On Delay 4 ns   Transconductance, Forward 200 S  NTE Electronics, Inc. Transconductance, Forward 200 S  MOSFET Transistors Transconductance, Forward 200 S  NTE Electronics, Inc. MOSFET Transistors Transconductance, Forward 200 S   Voltage, Breakdown, Drain to Source 90 V  NTE Electronics, Inc. Voltage, Breakdown, Drain to Source 90 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 90 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Breakdown, Drain to Source 90 V   Voltage, Drain to Source 90 V  NTE Electronics, Inc. Voltage, Drain to Source 90 V  MOSFET Transistors Voltage, Drain to Source 90 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Drain to Source 90 V   Voltage, Gate to Source ±20 V  NTE Electronics, Inc. Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.165" (4.2mm)  NTE Electronics, Inc. Width 0.165" (4.2mm)  MOSFET Transistors Width 0.165" (4.2mm)  NTE Electronics, Inc. MOSFET Transistors Width 0.165" (4.2mm)  
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