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NTE98 - 

T-NPN SI-PWR DARL HV AMP

NTE Electronics, Inc. NTE98
声明：图片仅供参考，请以实物为准！
制造商产品编号：
NTE98
仓库库存编号：
70214643
技术数据表：
View NTE98 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

NTE98产品概述

Silicon NPN Transistors

NTE98产品信息

  Configuration  Common Base  
  Current, Collector  20 A  
  Current, Continuous Collector  20 A  
  Current, Gain  30  
  Current, Output  20 A  
  Device Dissipation  175 W  
  Diameter  22.2 mm  
  Dimensions  22.2 Dia. x 8.89 H mm  
  Gain, DC Current, Maximum  400  
  Gain, DC Current, Minimum  40  
  Height  0.35" (8.89mm)  
  Input Voltage  8 V  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  2  
  Number of Pins  3  
  Package Type  TO-3  
  Polarity  NPN  
  Power Dissipation  175 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Ambient  1 °C/W  
  Resistance, Thermal, Junction to Case  1 °C⁄W  
  Temperature Range, Junction, Operating  -65 to 200 °C  
  Temperature, Operating, Maximum  +200 °C  
  Temperature, Operating, Minimum  -65 °C  
  Temperature, Operating, Range  -65 to +200 °C  
  Transistor Polarity  NPN  
  Transistor Type  NPN  
  Type  High Voltage, Power  
  Voltage, Breakdown, Collector to Emitter  500 V  
  Voltage, Collector to Emitter  500 V  
  Voltage, Collector to Emitter, Saturation  3.5 V  
  Voltage, Emitter to Base  8 V  
  Voltage, Output  700 V  
  Voltage, Saturation, Base to Emitter  2.5 V  
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(8.89mm)  Bipolar Transistors Height 0.35" (8.89mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.35" (8.89mm)   Input Voltage 8 V  NTE Electronics, Inc. Input Voltage 8 V  Bipolar Transistors Input Voltage 8 V  NTE Electronics, Inc. Bipolar Transistors Input Voltage 8 V   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 2  NTE Electronics, Inc. Number of Elements per Chip 2  Bipolar Transistors Number of Elements per Chip 2  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 2   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-3  NTE Electronics, Inc. Package Type TO-3  Bipolar Transistors Package Type TO-3  NTE Electronics, Inc. Bipolar Transistors Package Type TO-3   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 175 W  NTE Electronics, Inc. Power Dissipation 175 W  Bipolar Transistors Power Dissipation 175 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 175 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Ambient 1 °C/W  NTE Electronics, Inc. Resistance, Thermal, Junction to Ambient 1 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Ambient 1 °C/W  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Ambient 1 °C/W   Resistance, Thermal, Junction to Case 1 °C⁄W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 1 °C⁄W  Bipolar Transistors Resistance, Thermal, Junction to Case 1 °C⁄W  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Case 1 °C⁄W   Temperature Range, Junction, Operating -65 to 200 °C  NTE Electronics, Inc. Temperature Range, Junction, Operating -65 to 200 °C  Bipolar Transistors Temperature Range, Junction, Operating -65 to 200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature Range, Junction, Operating -65 to 200 °C   Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +200 °C  Bipolar Transistors Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +200 °C   Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, 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Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 500 V   Voltage, Collector to Emitter 500 V  NTE Electronics, Inc. Voltage, Collector to Emitter 500 V  Bipolar Transistors Voltage, Collector to Emitter 500 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 500 V   Voltage, Collector to Emitter, Saturation 3.5 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 3.5 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 3.5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 3.5 V   Voltage, Emitter to Base 8 V  NTE Electronics, Inc. Voltage, Emitter to Base 8 V  Bipolar Transistors Voltage, Emitter to Base 8 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 8 V   Voltage, Output 700 V  NTE Electronics, Inc. Voltage, Output 700 V  Bipolar Transistors Voltage, Output 700 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Output 700 V   Voltage, Saturation, Base to Emitter 2.5 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 2.5 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 2.5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 2.5 V  
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