amphenol代理商
专业销售Amphenol（安费诺）全系列产品-英国2号仓库
库存查询
美国1号分类选型新加坡2号分类选型英国10号分类选型英国2号分类选型日本5号分类选型

在本站结果里搜索：    
热门搜索词:  Connectors  8910DPA43V02  Amphenol  UVZSeries 160VDC  70084122  IM21-14-CDTRI

2N5551G - 

SS T092 RF XSTR NPN 160V -LEAD FREE

ON Semiconductor 2N5551G
声明：图片仅供参考，请以实物为准！
制造商产品编号：
2N5551G
仓库库存编号：
70099762
技术数据表：
View 2N5551G Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

2N5551G产品信息

  Brand/Series  2N Bipolar Series  
  Configuration  Common Base  
  Current, Collector  600 mA  
  Current, Gain  20  
  Dimensions  5.20 x 4.19 x 5.33 mm  
  Frequency, Operating  300 MHz  
  Height  0.21" (5.33mm)  
  Length  0.204" (5.2mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-92  
  Polarity  NPN  
  Power Dissipation  625 mW  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  83.3 °C/W  
  Temperature, Operating, Maximum  +200 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +200 °C  
  Transistor Type  NPN  
  Type  Amplifier  
  Voltage, Breakdown, Collector to Emitter  160 V  
  Voltage, Collector to Base  180 V  
  Voltage, Collector to Emitter  160 V  
  Voltage, Collector to Emitter, Saturation  0.25 V  
  Voltage, Emitter to Base  6 V  
  Voltage, Saturation, Base to Emitter  1.2 V  
  Width  0.165" (4.19mm)  
关键词         

2N5551G客户还搜索了

  • 参考图片
  • 制造商 / 说明 / 型号 / 仓库库存编号
  • PDF
  • 操作

2N5551G相关搜索

Brand/Series 2N Bipolar Series  ON Semiconductor Brand/Series 2N Bipolar Series  Bipolar Transistors Brand/Series 2N Bipolar Series  ON Semiconductor Bipolar Transistors Brand/Series 2N Bipolar Series   Configuration Common Base  ON Semiconductor Configuration Common Base  Bipolar Transistors Configuration Common Base  ON Semiconductor Bipolar Transistors Configuration Common Base   Current, Collector 600 mA  ON Semiconductor Current, Collector 600 mA  Bipolar Transistors Current, Collector 600 mA  ON Semiconductor Bipolar Transistors Current, Collector 600 mA   Current, Gain 20  ON Semiconductor Current, Gain 20  Bipolar Transistors Current, Gain 20  ON Semiconductor Bipolar Transistors Current, Gain 20   Dimensions 5.20 x 4.19 x 5.33 mm  ON Semiconductor Dimensions 5.20 x 4.19 x 5.33 mm  Bipolar Transistors Dimensions 5.20 x 4.19 x 5.33 mm  ON Semiconductor Bipolar Transistors Dimensions 5.20 x 4.19 x 5.33 mm   Frequency, Operating 300 MHz  ON Semiconductor Frequency, Operating 300 MHz  Bipolar Transistors Frequency, Operating 300 MHz  ON Semiconductor Bipolar Transistors Frequency, Operating 300 MHz   Height 0.21" (5.33mm)  ON Semiconductor Height 0.21" (5.33mm)  Bipolar Transistors Height 0.21" (5.33mm)  ON Semiconductor Bipolar Transistors Height 0.21" (5.33mm)   Length 0.204" (5.2mm)  ON Semiconductor Length 0.204" (5.2mm)  Bipolar Transistors Length 0.204" (5.2mm)  ON Semiconductor Bipolar Transistors Length 0.204" (5.2mm)   Material Si  ON Semiconductor Material Si  Bipolar Transistors Material Si  ON Semiconductor Bipolar Transistors Material Si   Mounting Type Through Hole  ON Semiconductor Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  ON Semiconductor Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  ON Semiconductor Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  Bipolar Transistors Number of Pins 3  ON Semiconductor Bipolar Transistors Number of Pins 3   Package Type TO-92  ON Semiconductor Package Type TO-92  Bipolar Transistors Package Type TO-92  ON Semiconductor Bipolar Transistors Package Type TO-92   Polarity NPN  ON Semiconductor Polarity NPN  Bipolar Transistors Polarity NPN  ON Semiconductor Bipolar Transistors Polarity NPN   Power Dissipation 625 mW  ON Semiconductor Power Dissipation 625 mW  Bipolar Transistors Power Dissipation 625 mW  ON Semiconductor Bipolar Transistors Power Dissipation 625 mW   Primary Type Si  ON Semiconductor Primary Type Si  Bipolar Transistors Primary Type Si  ON Semiconductor Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 83.3 °C/W  ON Semiconductor Resistance, Thermal, Junction to Case 83.3 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 83.3 °C/W  ON Semiconductor Bipolar Transistors Resistance, Thermal, Junction to Case 83.3 °C/W   Temperature, Operating, Maximum +200 °C  ON Semiconductor Temperature, Operating, Maximum +200 °C  Bipolar Transistors Temperature, Operating, Maximum +200 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Maximum +200 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  Bipolar Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +200 °C  ON Semiconductor Temperature, Operating, Range -55 to +200 °C  Bipolar Transistors Temperature, Operating, Range -55 to +200 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Range -55 to +200 °C   Transistor Type NPN  ON Semiconductor Transistor Type NPN  Bipolar Transistors Transistor Type NPN  ON Semiconductor Bipolar Transistors Transistor Type NPN   Type Amplifier  ON Semiconductor Type Amplifier  Bipolar Transistors Type Amplifier  ON Semiconductor Bipolar Transistors Type Amplifier   Voltage, Breakdown, Collector to Emitter 160 V  ON Semiconductor Voltage, Breakdown, Collector to Emitter 160 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 160 V  ON Semiconductor Bipolar Transistors Voltage, Breakdown, Collector to Emitter 160 V   Voltage, Collector to Base 180 V  ON Semiconductor Voltage, Collector to Base 180 V  Bipolar Transistors Voltage, Collector to Base 180 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Base 180 V   Voltage, Collector to Emitter 160 V  ON Semiconductor Voltage, Collector to Emitter 160 V  Bipolar Transistors Voltage, Collector to Emitter 160 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter 160 V   Voltage, Collector to Emitter, Saturation 0.25 V  ON Semiconductor Voltage, Collector to Emitter, Saturation 0.25 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.25 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.25 V   Voltage, Emitter to Base 6 V  ON Semiconductor Voltage, Emitter to Base 6 V  Bipolar Transistors Voltage, Emitter to Base 6 V  ON Semiconductor Bipolar Transistors Voltage, Emitter to Base 6 V   Voltage, Saturation, Base to Emitter 1.2 V  ON Semiconductor Voltage, Saturation, Base to Emitter 1.2 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 1.2 V  ON Semiconductor Bipolar Transistors Voltage, Saturation, Base to Emitter 1.2 V   Width 0.165" (4.19mm)  ON Semiconductor Width 0.165" (4.19mm)  Bipolar Transistors Width 0.165" (4.19mm)  ON Semiconductor Bipolar Transistors Width 0.165" (4.19mm)  
电话:400-900-3095
QQ:800152669
关于我们 | Amphenol简介 | Amphenol产品 | Amphenol产品应用 | Amphenol动态 | 按系列选型 | 按产品规格选型 | Amphenol选型手册 | 付款方式 | 联系我们
Copyright © 2017 www.amphenol-connect.com All Rights Reserved. 技术支持：电子元器件 ICP备案证书号:粤ICP备11103613号