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2N6027G - 

Transistor, Programmable Unijunction, 40 V, TO-92, Pb-Free

ON Semiconductor 2N6027G
声明：图片仅供参考，请以实物为准！
制造商产品编号：
2N6027G
仓库库存编号：
70099675
技术数据表：
View 2N6027G Datasheet Datasheet
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由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

2N6027G产品信息

  Brand/Series  2N Bipolar Series  
  Current, Gate  10 nA  
  Current, Non-Repetitive Peak Forward  5 A  
  Current, Peak  2 μA  
  Current, Valley  50 μA  
  Device Dissipation  300 mW  
  Dimensions  5.20 x 0.533 x 5.33 mm  
  Height  0.21" (5.33mm)  
  Length  0.204" (5.2mm)  
  Mounting Type  Through Hole  
  Number of Pins  3  
  Package Type  TO-92  
  Power Dissipation  300 mW  
  Resistance, Thermal, Junction to Case  75 °C/W  
  Temperature Range, Junction, Operating  –50 to +125 °C  
  Temperature, Operating, Maximum  +100 °C  
  Temperature, Operating, Minimum  -50 °C  
  Temperature, Operating, Range  -50 to +100 °C  
  Thermal Resistance, Junction to Ambient  200 °C/W  
  Transistor Type  Unijunction  
  Voltage, Reverse  40 V  
  Width  0.021" (0.533mm)  
关键词         

2N6027G相关搜索

Brand/Series 2N Bipolar Series  ON Semiconductor Brand/Series 2N Bipolar Series  UJT Transistors Brand/Series 2N Bipolar Series  ON Semiconductor UJT Transistors Brand/Series 2N Bipolar Series   Current, Gate 10 nA  ON Semiconductor Current, Gate 10 nA  UJT Transistors Current, Gate 10 nA  ON Semiconductor UJT Transistors Current, Gate 10 nA   Current, Non-Repetitive Peak Forward 5 A  ON Semiconductor Current, Non-Repetitive Peak Forward 5 A  UJT Transistors Current, Non-Repetitive Peak Forward 5 A  ON Semiconductor UJT Transistors Current, Non-Repetitive Peak Forward 5 A   Current, Peak 2 μA  ON Semiconductor Current, Peak 2 μA  UJT Transistors Current, Peak 2 μA  ON Semiconductor UJT Transistors Current, Peak 2 μA   Current, Valley 50 μA  ON Semiconductor Current, Valley 50 μA  UJT Transistors Current, Valley 50 μA  ON Semiconductor UJT Transistors Current, Valley 50 μA   Device Dissipation 300 mW  ON Semiconductor Device Dissipation 300 mW  UJT Transistors Device Dissipation 300 mW  ON Semiconductor UJT Transistors Device Dissipation 300 mW   Dimensions 5.20 x 0.533 x 5.33 mm  ON Semiconductor Dimensions 5.20 x 0.533 x 5.33 mm  UJT Transistors Dimensions 5.20 x 0.533 x 5.33 mm  ON Semiconductor UJT Transistors Dimensions 5.20 x 0.533 x 5.33 mm   Height 0.21" (5.33mm)  ON Semiconductor Height 0.21" (5.33mm)  UJT Transistors Height 0.21" (5.33mm)  ON Semiconductor UJT Transistors Height 0.21" (5.33mm)   Length 0.204" (5.2mm)  ON Semiconductor Length 0.204" (5.2mm)  UJT Transistors Length 0.204" (5.2mm)  ON Semiconductor UJT Transistors Length 0.204" (5.2mm)   Mounting Type Through Hole  ON Semiconductor Mounting Type Through Hole  UJT Transistors Mounting Type Through Hole  ON Semiconductor UJT Transistors Mounting Type Through Hole   Number of Pins 3  ON Semiconductor Number of Pins 3  UJT Transistors Number of Pins 3  ON Semiconductor UJT Transistors Number of Pins 3   Package Type TO-92  ON Semiconductor Package Type TO-92  UJT Transistors Package Type TO-92  ON Semiconductor UJT Transistors Package Type TO-92   Power Dissipation 300 mW  ON Semiconductor Power Dissipation 300 mW  UJT Transistors Power Dissipation 300 mW  ON Semiconductor UJT Transistors Power Dissipation 300 mW   Resistance, Thermal, Junction to Case 75 °C/W  ON Semiconductor Resistance, Thermal, Junction to Case 75 °C/W  UJT Transistors Resistance, Thermal, Junction to Case 75 °C/W  ON Semiconductor UJT Transistors Resistance, Thermal, Junction to Case 75 °C/W   Temperature Range, Junction, Operating –50 to +125 °C  ON Semiconductor Temperature Range, Junction, Operating –50 to +125 °C  UJT Transistors Temperature Range, Junction, Operating –50 to +125 °C  ON Semiconductor UJT Transistors Temperature Range, Junction, Operating –50 to +125 °C   Temperature, Operating, Maximum +100 °C  ON Semiconductor Temperature, Operating, Maximum +100 °C  UJT Transistors Temperature, Operating, Maximum +100 °C  ON Semiconductor UJT Transistors Temperature, Operating, Maximum +100 °C   Temperature, Operating, Minimum -50 °C  ON Semiconductor Temperature, Operating, Minimum -50 °C  UJT Transistors Temperature, Operating, Minimum -50 °C  ON Semiconductor UJT Transistors Temperature, Operating, Minimum -50 °C   Temperature, Operating, Range -50 to +100 °C  ON Semiconductor Temperature, Operating, Range -50 to +100 °C  UJT Transistors Temperature, Operating, Range -50 to +100 °C  ON Semiconductor UJT Transistors Temperature, Operating, Range -50 to +100 °C   Thermal Resistance, Junction to Ambient 200 °C/W  ON Semiconductor Thermal Resistance, Junction to Ambient 200 °C/W  UJT Transistors Thermal Resistance, Junction to Ambient 200 °C/W  ON Semiconductor UJT Transistors Thermal Resistance, Junction to Ambient 200 °C/W   Transistor Type Unijunction  ON Semiconductor Transistor Type Unijunction  UJT Transistors Transistor Type Unijunction  ON Semiconductor UJT Transistors Transistor Type Unijunction   Voltage, Reverse 40 V  ON Semiconductor Voltage, Reverse 40 V  UJT Transistors Voltage, Reverse 40 V  ON Semiconductor UJT Transistors Voltage, Reverse 40 V   Width 0.021" (0.533mm)  ON Semiconductor Width 0.021" (0.533mm)  UJT Transistors Width 0.021" (0.533mm)  ON Semiconductor UJT Transistors Width 0.021" (0.533mm)  
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