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2N7000G - 

MOSFET; N-Ch; VDSS 60VDC; RDS(ON) 5 Ohms; ID 200mA; TO-92 (TO-226); PD 350mW; -55degc

ON Semiconductor 2N7000G
声明:图片仅供参考,请以实物为准!
制造商产品编号:
2N7000G
仓库库存编号:
70520430
技术数据表:
View 2N7000G Datasheet Datasheet
订购热线: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!

2N7000G产品概述

Features:
  • AEC Qualified
  • PPAP Capable
  • This is a Pb-Free Device
  • 2N7000G产品信息

      Brand/Series  MOSFET Series  
      Capacitance, Input  60 pF  
      Channel Type  N  
      Current, Drain  200 mA  
      Dimensions  5.2 x 3.43 x 5.33 mm  
      Height  0.21" (5.33mm)  
      Length  0.204" (5.2mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Package Type  TO-92  
      Power Dissipation  350 mW  
      Resistance, Drain to Source On  5 Ohms  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Time, Turn-Off Delay  10 ns  
      Time, Turn-On Delay  10 ns  
      Transconductance, Forward  100 μmhos  
      Voltage, Drain to Source  60 V  
      Voltage, Gate to Source  ±20 V  
      Width  0.135" (3.43mm)  
    关键词         

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    2N7000G相关搜索

    Brand/Series MOSFET Series  ON Semiconductor Brand/Series MOSFET Series  Uncategorized Brand/Series MOSFET Series  ON Semiconductor Uncategorized Brand/Series MOSFET Series   Capacitance, Input 60 pF  ON Semiconductor Capacitance, Input 60 pF  Uncategorized Capacitance, Input 60 pF  ON Semiconductor Uncategorized Capacitance, Input 60 pF   Channel Type N  ON Semiconductor Channel Type N  Uncategorized Channel Type N  ON Semiconductor Uncategorized Channel Type N   Current, Drain 200 mA  ON Semiconductor Current, Drain 200 mA  Uncategorized Current, Drain 200 mA  ON Semiconductor Uncategorized Current, Drain 200 mA   Dimensions 5.2 x 3.43 x 5.33 mm  ON Semiconductor Dimensions 5.2 x 3.43 x 5.33 mm  Uncategorized Dimensions 5.2 x 3.43 x 5.33 mm  ON Semiconductor Uncategorized Dimensions 5.2 x 3.43 x 5.33 mm   Height 0.21" (5.33mm)  ON Semiconductor Height 0.21" (5.33mm)  Uncategorized Height 0.21" (5.33mm)  ON Semiconductor Uncategorized Height 0.21" (5.33mm)   Length 0.204" (5.2mm)  ON Semiconductor Length 0.204" (5.2mm)  Uncategorized Length 0.204" (5.2mm)  ON Semiconductor Uncategorized Length 0.204" (5.2mm)   Mounting Type Through Hole  ON Semiconductor Mounting Type Through Hole  Uncategorized Mounting Type Through Hole  ON Semiconductor Uncategorized Mounting Type Through Hole   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  Uncategorized Number of Elements per Chip 1  ON Semiconductor Uncategorized Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  Uncategorized Number of Pins 3  ON Semiconductor Uncategorized Number of Pins 3   Package Type TO-92  ON Semiconductor Package Type TO-92  Uncategorized Package Type TO-92  ON Semiconductor Uncategorized Package Type TO-92   Power Dissipation 350 mW  ON Semiconductor Power Dissipation 350 mW  Uncategorized Power Dissipation 350 mW  ON Semiconductor Uncategorized Power Dissipation 350 mW   Resistance, Drain to Source On 5 Ohms  ON Semiconductor Resistance, Drain to Source On 5 Ohms  Uncategorized Resistance, Drain to Source On 5 Ohms  ON Semiconductor Uncategorized Resistance, Drain to Source On 5 Ohms   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  Uncategorized Temperature, Operating, Maximum +150 °C  ON Semiconductor Uncategorized Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  Uncategorized Temperature, Operating, Minimum -55 °C  ON Semiconductor Uncategorized Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  Uncategorized Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Uncategorized Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 10 ns  ON Semiconductor Time, Turn-Off Delay 10 ns  Uncategorized Time, Turn-Off Delay 10 ns  ON Semiconductor Uncategorized Time, Turn-Off Delay 10 ns   Time, Turn-On Delay 10 ns  ON Semiconductor Time, Turn-On Delay 10 ns  Uncategorized Time, Turn-On Delay 10 ns  ON Semiconductor Uncategorized Time, Turn-On Delay 10 ns   Transconductance, Forward 100 μmhos  ON Semiconductor Transconductance, Forward 100 μmhos  Uncategorized Transconductance, Forward 100 μmhos  ON Semiconductor Uncategorized Transconductance, Forward 100 μmhos   Voltage, Drain to Source 60 V  ON Semiconductor Voltage, Drain to Source 60 V  Uncategorized Voltage, Drain to Source 60 V  ON Semiconductor Uncategorized Voltage, Drain to Source 60 V   Voltage, Gate to Source ±20 V  ON Semiconductor Voltage, Gate to Source ±20 V  Uncategorized Voltage, Gate to Source ±20 V  ON Semiconductor Uncategorized Voltage, Gate to Source ±20 V   Width 0.135" (3.43mm)  ON Semiconductor Width 0.135" (3.43mm)  Uncategorized Width 0.135" (3.43mm)  ON Semiconductor Uncategorized Width 0.135" (3.43mm)  
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