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2N7000RLRAG - 

MOSFET; N-Ch; VDSS 60VDC; RDS(ON) 5 Ohms; ID 200mA; TO-92 (TO-226); PD 350mW; -55degc

ON Semiconductor 2N7000RLRAG
声明：图片仅供参考，请以实物为准！
制造商产品编号：
2N7000RLRAG
仓库库存编号：
70100110
技术数据表：
View 2N7000RLRAG Datasheet Datasheet
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由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

2N7000RLRAG产品信息

  Brand/Series  MOSFET Series  
  Capacitance, Input  Maximum of 60 pF @ 25 V  
  Channel Mode  Enhancement  
  Channel Type  N  
  Configuration  Single  
  Current, Drain  200 mA  
  Dimensions  4.45 x 3.18 x 4.32 mm  
  Height  0.17" (4.32mm)  
  Length  0.175" (4.45mm)  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-92  
  Polarization  N-Channel  
  Power Dissipation  350 mW  
  Resistance, Drain to Source On  6 Ω  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Time, Turn-Off Delay  10 ns  
  Time, Turn-On Delay  10 ns  
  Transconductance, Forward  100 μS  
  Voltage, Breakdown, Drain to Source  60 V  
  Voltage, Drain to Source  60 V  
  Voltage, Gate to Source  ±20 V  
  Width  0.125" <1/8> (3.2mm)  
关键词         

2N7000RLRAG相关搜索

Brand/Series MOSFET Series  ON Semiconductor Brand/Series MOSFET Series  MOSFET Transistors Brand/Series MOSFET Series  ON Semiconductor MOSFET Transistors Brand/Series MOSFET Series   Capacitance, Input Maximum of 60 pF @ 25 V  ON Semiconductor Capacitance, Input Maximum of 60 pF @ 25 V  MOSFET Transistors Capacitance, Input Maximum of 60 pF @ 25 V  ON Semiconductor MOSFET Transistors Capacitance, Input Maximum of 60 pF @ 25 V   Channel Mode Enhancement  ON Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  ON Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  ON Semiconductor Channel Type N  MOSFET Transistors Channel Type N  ON Semiconductor MOSFET Transistors Channel Type N   Configuration Single  ON Semiconductor Configuration Single  MOSFET Transistors Configuration Single  ON Semiconductor MOSFET Transistors Configuration Single   Current, Drain 200 mA  ON Semiconductor Current, Drain 200 mA  MOSFET Transistors Current, Drain 200 mA  ON Semiconductor MOSFET Transistors Current, Drain 200 mA   Dimensions 4.45 x 3.18 x 4.32 mm  ON Semiconductor Dimensions 4.45 x 3.18 x 4.32 mm  MOSFET Transistors Dimensions 4.45 x 3.18 x 4.32 mm  ON Semiconductor MOSFET Transistors Dimensions 4.45 x 3.18 x 4.32 mm   Height 0.17" (4.32mm)  ON Semiconductor Height 0.17" (4.32mm)  MOSFET Transistors Height 0.17" (4.32mm)  ON Semiconductor MOSFET Transistors Height 0.17" (4.32mm)   Length 0.175" (4.45mm)  ON Semiconductor Length 0.175" (4.45mm)  MOSFET Transistors Length 0.175" (4.45mm)  ON Semiconductor MOSFET Transistors Length 0.175" (4.45mm)   Mounting Type Through Hole  ON Semiconductor Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  ON Semiconductor MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  ON Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  ON Semiconductor MOSFET Transistors Number of Pins 3   Package Type TO-92  ON Semiconductor Package Type TO-92  MOSFET Transistors Package Type TO-92  ON Semiconductor MOSFET Transistors Package Type TO-92   Polarization N-Channel  ON Semiconductor Polarization N-Channel  MOSFET Transistors Polarization N-Channel  ON Semiconductor MOSFET Transistors Polarization N-Channel   Power Dissipation 350 mW  ON Semiconductor Power Dissipation 350 mW  MOSFET Transistors Power Dissipation 350 mW  ON Semiconductor MOSFET Transistors Power Dissipation 350 mW   Resistance, Drain to Source On 6 Ω  ON Semiconductor Resistance, Drain to Source On 6 Ω  MOSFET Transistors Resistance, Drain to Source On 6 Ω  ON Semiconductor MOSFET Transistors Resistance, Drain to Source On 6 Ω   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 10 ns  ON Semiconductor Time, Turn-Off Delay 10 ns  MOSFET Transistors Time, Turn-Off Delay 10 ns  ON Semiconductor MOSFET Transistors Time, Turn-Off Delay 10 ns   Time, Turn-On Delay 10 ns  ON Semiconductor Time, Turn-On Delay 10 ns  MOSFET Transistors Time, Turn-On Delay 10 ns  ON Semiconductor MOSFET Transistors Time, Turn-On Delay 10 ns   Transconductance, Forward 100 μS  ON Semiconductor Transconductance, Forward 100 μS  MOSFET Transistors Transconductance, Forward 100 μS  ON Semiconductor MOSFET Transistors Transconductance, Forward 100 μS   Voltage, Breakdown, Drain to Source 60 V  ON Semiconductor Voltage, Breakdown, Drain to Source 60 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 60 V  ON Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 60 V   Voltage, Drain to Source 60 V  ON Semiconductor Voltage, Drain to Source 60 V  MOSFET Transistors Voltage, Drain to Source 60 V  ON Semiconductor MOSFET Transistors Voltage, Drain to Source 60 V   Voltage, Gate to Source ±20 V  ON Semiconductor Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  ON Semiconductor MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.125" <1/8> (3.2mm)  ON Semiconductor Width 0.125" <1/8> (3.2mm)  MOSFET Transistors Width 0.125" <1/8> (3.2mm)  ON Semiconductor MOSFET Transistors Width 0.125" <1/8> (3.2mm)  
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