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BD135G - 

ON Semi BD135G NPN Bipolar Transistor, 1.5 A, 45 V, 3-Pin TO-225

ON Semiconductor BD135G
声明:图片仅供参考,请以实物为准!
制造商产品编号:
BD135G
仓库库存编号:
70100373
技术数据表:
View BD135G Datasheet Datasheet
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BD135G产品信息

  Brand/Series  BD Series  
  Configuration  Common Base  
  Current, Collector  1.5 A  
  Current, Gain  25  
  Dimensions  7.80 x 3.00 x 11.10 mm  
  Height  0.437" (11.1mm)  
  Length  0.307" (7.8mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-225  
  Polarity  NPN  
  Power Dissipation  12.5 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  10 °C/W  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Transistor Type  NPN  
  Type  Medium Power  
  Voltage, Breakdown, Collector to Emitter  45 V  
  Voltage, Collector to Base  45 V  
  Voltage, Collector to Emitter  45 V  
  Voltage, Collector to Emitter, Saturation  0.5 V  
  Voltage, Emitter to Base  5 V  
  Width  0.118" (3mm)  
关键词         

BD135G相关搜索

Brand/Series BD Series  ON Semiconductor Brand/Series BD Series  Bipolar Transistors Brand/Series BD Series  ON Semiconductor Bipolar Transistors Brand/Series BD Series   Configuration Common Base  ON Semiconductor Configuration Common Base  Bipolar Transistors Configuration Common Base  ON Semiconductor Bipolar Transistors Configuration Common Base   Current, Collector 1.5 A  ON Semiconductor Current, Collector 1.5 A  Bipolar Transistors Current, Collector 1.5 A  ON Semiconductor Bipolar Transistors Current, Collector 1.5 A   Current, Gain 25  ON Semiconductor Current, Gain 25  Bipolar Transistors Current, Gain 25  ON Semiconductor Bipolar Transistors Current, Gain 25   Dimensions 7.80 x 3.00 x 11.10 mm  ON Semiconductor Dimensions 7.80 x 3.00 x 11.10 mm  Bipolar Transistors Dimensions 7.80 x 3.00 x 11.10 mm  ON Semiconductor Bipolar Transistors Dimensions 7.80 x 3.00 x 11.10 mm   Height 0.437" (11.1mm)  ON Semiconductor Height 0.437" (11.1mm)  Bipolar Transistors Height 0.437" (11.1mm)  ON Semiconductor Bipolar Transistors Height 0.437" (11.1mm)   Length 0.307" (7.8mm)  ON Semiconductor Length 0.307" (7.8mm)  Bipolar Transistors Length 0.307" (7.8mm)  ON Semiconductor Bipolar Transistors Length 0.307" (7.8mm)   Material Si  ON Semiconductor Material Si  Bipolar Transistors Material Si  ON Semiconductor Bipolar Transistors Material Si   Mounting Type Through Hole  ON Semiconductor Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  ON Semiconductor Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  ON Semiconductor Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  Bipolar Transistors Number of Pins 3  ON Semiconductor Bipolar Transistors Number of Pins 3   Package Type TO-225  ON Semiconductor Package Type TO-225  Bipolar Transistors Package Type TO-225  ON Semiconductor Bipolar Transistors Package Type TO-225   Polarity NPN  ON Semiconductor Polarity NPN  Bipolar Transistors Polarity NPN  ON Semiconductor Bipolar Transistors Polarity NPN   Power Dissipation 12.5 W  ON Semiconductor Power Dissipation 12.5 W  Bipolar Transistors Power Dissipation 12.5 W  ON Semiconductor Bipolar Transistors Power Dissipation 12.5 W   Primary Type Si  ON Semiconductor Primary Type Si  Bipolar Transistors Primary Type Si  ON Semiconductor Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 10 °C/W  ON Semiconductor Resistance, Thermal, Junction to Case 10 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 10 °C/W  ON Semiconductor Bipolar Transistors Resistance, Thermal, Junction to Case 10 °C/W   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  Bipolar Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  Bipolar Transistors Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Range -55 to +150 °C   Transistor Type NPN  ON Semiconductor Transistor Type NPN  Bipolar Transistors Transistor Type NPN  ON Semiconductor Bipolar Transistors Transistor Type NPN   Type Medium Power  ON Semiconductor Type Medium Power  Bipolar Transistors Type Medium Power  ON Semiconductor Bipolar Transistors Type Medium Power   Voltage, Breakdown, Collector to Emitter 45 V  ON Semiconductor Voltage, Breakdown, Collector to Emitter 45 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 45 V  ON Semiconductor Bipolar Transistors Voltage, Breakdown, Collector to Emitter 45 V   Voltage, Collector to Base 45 V  ON Semiconductor Voltage, Collector to Base 45 V  Bipolar Transistors Voltage, Collector to Base 45 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Base 45 V   Voltage, Collector to Emitter 45 V  ON Semiconductor Voltage, Collector to Emitter 45 V  Bipolar Transistors Voltage, Collector to Emitter 45 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter 45 V   Voltage, Collector to Emitter, Saturation 0.5 V  ON Semiconductor Voltage, Collector to Emitter, Saturation 0.5 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.5 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.5 V   Voltage, Emitter to Base 5 V  ON Semiconductor Voltage, Emitter to Base 5 V  Bipolar Transistors Voltage, Emitter to Base 5 V  ON Semiconductor Bipolar Transistors Voltage, Emitter to Base 5 V   Width 0.118" (3mm)  ON Semiconductor Width 0.118" (3mm)  Bipolar Transistors Width 0.118" (3mm)  ON Semiconductor Bipolar Transistors Width 0.118" (3mm)  
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