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BS170G - 

MOSFET; N-Ch; VDSS 90VDC; RDS(ON) 1.8 Ohms; ID 0.5A; TO-92 (TO-226); PD 350mW; -55degc

ON Semiconductor BS170G
声明：图片仅供参考，请以实物为准！
制造商产品编号：
BS170G
仓库库存编号：
70099793
技术数据表：
View BS170G Datasheet Datasheet
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由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

BS170G产品信息

  Brand/Series  BS Series  
  Capacitance, Input  Maximum of 60 pF @ 25 V  
  Channel Mode  Enhancement  
  Channel Type  N  
  Configuration  Single  
  Current, Drain  0.5 A  
  Dimensions  4.45 x 3.18 x 4.32 mm  
  Height  0.17" (4.32mm)  
  Length  0.175" (4.45mm)  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-92  
  Polarization  N-Channel  
  Power Dissipation  350 mW  
  Resistance, Drain to Source On  5 Ω  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Time, Turn-Off Delay  4 ns  
  Time, Turn-On Delay  4 ns  
  Transconductance, Forward  200 mS  
  Voltage, Breakdown, Drain to Source  90 V  
  Voltage, Drain to Source  90 V  
  Voltage, Gate to Source  ±20 V  
  Width  0.125" <1/8> (3.2mm)  
关键词         

BS170G相关搜索

Brand/Series BS Series  ON Semiconductor Brand/Series BS Series  MOSFET Transistors Brand/Series BS Series  ON Semiconductor MOSFET Transistors Brand/Series BS Series   Capacitance, Input Maximum of 60 pF @ 25 V  ON Semiconductor Capacitance, Input Maximum of 60 pF @ 25 V  MOSFET Transistors Capacitance, Input Maximum of 60 pF @ 25 V  ON Semiconductor MOSFET Transistors Capacitance, Input Maximum of 60 pF @ 25 V   Channel Mode Enhancement  ON Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  ON Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  ON Semiconductor Channel Type N  MOSFET Transistors Channel Type N  ON Semiconductor MOSFET Transistors Channel Type N   Configuration Single  ON Semiconductor Configuration Single  MOSFET Transistors Configuration Single  ON Semiconductor MOSFET Transistors Configuration Single   Current, Drain 0.5 A  ON Semiconductor Current, Drain 0.5 A  MOSFET Transistors Current, Drain 0.5 A  ON Semiconductor MOSFET Transistors Current, Drain 0.5 A   Dimensions 4.45 x 3.18 x 4.32 mm  ON Semiconductor Dimensions 4.45 x 3.18 x 4.32 mm  MOSFET Transistors Dimensions 4.45 x 3.18 x 4.32 mm  ON Semiconductor MOSFET Transistors Dimensions 4.45 x 3.18 x 4.32 mm   Height 0.17" (4.32mm)  ON Semiconductor Height 0.17" (4.32mm)  MOSFET Transistors Height 0.17" (4.32mm)  ON Semiconductor MOSFET Transistors Height 0.17" (4.32mm)   Length 0.175" (4.45mm)  ON Semiconductor Length 0.175" (4.45mm)  MOSFET Transistors Length 0.175" (4.45mm)  ON Semiconductor MOSFET Transistors Length 0.175" (4.45mm)   Mounting Type Through Hole  ON Semiconductor Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  ON Semiconductor MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  ON Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  ON Semiconductor MOSFET Transistors Number of Pins 3   Package Type TO-92  ON Semiconductor Package Type TO-92  MOSFET Transistors Package Type TO-92  ON Semiconductor MOSFET Transistors Package Type TO-92   Polarization N-Channel  ON Semiconductor Polarization N-Channel  MOSFET Transistors Polarization N-Channel  ON Semiconductor MOSFET Transistors Polarization N-Channel   Power Dissipation 350 mW  ON Semiconductor Power Dissipation 350 mW  MOSFET Transistors Power Dissipation 350 mW  ON Semiconductor MOSFET Transistors Power Dissipation 350 mW   Resistance, Drain to Source On 5 Ω  ON Semiconductor Resistance, Drain to Source On 5 Ω  MOSFET Transistors Resistance, Drain to Source On 5 Ω  ON Semiconductor MOSFET Transistors Resistance, Drain to Source On 5 Ω   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 4 ns  ON Semiconductor Time, Turn-Off Delay 4 ns  MOSFET Transistors Time, Turn-Off Delay 4 ns  ON Semiconductor MOSFET Transistors Time, Turn-Off Delay 4 ns   Time, Turn-On Delay 4 ns  ON Semiconductor Time, Turn-On Delay 4 ns  MOSFET Transistors Time, Turn-On Delay 4 ns  ON Semiconductor MOSFET Transistors Time, Turn-On Delay 4 ns   Transconductance, Forward 200 mS  ON Semiconductor Transconductance, Forward 200 mS  MOSFET Transistors Transconductance, Forward 200 mS  ON Semiconductor MOSFET Transistors Transconductance, Forward 200 mS   Voltage, Breakdown, Drain to Source 90 V  ON Semiconductor Voltage, Breakdown, Drain to Source 90 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 90 V  ON Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 90 V   Voltage, Drain to Source 90 V  ON Semiconductor Voltage, Drain to Source 90 V  MOSFET Transistors Voltage, Drain to Source 90 V  ON Semiconductor MOSFET Transistors Voltage, Drain to Source 90 V   Voltage, Gate to Source ±20 V  ON Semiconductor Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  ON Semiconductor MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.125" <1/8> (3.2mm)  ON Semiconductor Width 0.125" <1/8> (3.2mm)  MOSFET Transistors Width 0.125" <1/8> (3.2mm)  ON Semiconductor MOSFET Transistors Width 0.125" <1/8> (3.2mm)  
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