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BSS84LT1G - 

MOSFET, Power; P-Ch; VDSS 50VDC; RDS(ON) 5Ohms; ID 130mA; SOT-23 (TO-236); PD 225mW

ON Semiconductor BSS84LT1G
声明：图片仅供参考，请以实物为准！
制造商产品编号：
BSS84LT1G
仓库库存编号：
70100186
技术数据表：
View BSS84LT1G Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

BSS84LT1G产品信息

  Brand/Series  BSS Series  
  Capacitance, Input  36 pF @ 5 V  
  Channel Mode  Enhancement  
  Channel Type  P  
  Configuration  Single  
  Current, Drain  130 mA  
  Dimensions  3.04 x 1.4 x 1.01 mm  
  Gate Charge, Total  6000 pC  
  Height  0.04" (1.01mm)  
  Length  0.119" (3.04mm)  
  Mounting Type  Surface Mount  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  SOT-23  
  Polarization  P-Channel  
  Power Dissipation  225 mW  
  Resistance, Drain to Source On  10 Ω  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Time, Turn-Off Delay  12 ns  
  Time, Turn-On Delay  3.6 ns  
  Transconductance, Forward  50 mS  
  Typical Gate Charge @ Vgs  2.2 nC @ -10 V  
  Voltage, Breakdown, Drain to Source  50 V  
  Voltage, Drain to Source  -50 V  
  Voltage, Forward, Diode  2.2 V  
  Voltage, Gate to Source  ±20 V  
  Width  0.055" (1.4mm)  
关键词         

BSS84LT1G相关搜索

Brand/Series BSS Series  ON Semiconductor Brand/Series BSS Series  MOSFET Transistors Brand/Series BSS Series  ON Semiconductor MOSFET Transistors Brand/Series BSS Series   Capacitance, Input 36 pF @ 5 V  ON Semiconductor Capacitance, Input 36 pF @ 5 V  MOSFET Transistors Capacitance, Input 36 pF @ 5 V  ON Semiconductor MOSFET Transistors Capacitance, Input 36 pF @ 5 V   Channel Mode Enhancement  ON Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  ON Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type P  ON Semiconductor Channel Type P  MOSFET Transistors Channel Type P  ON Semiconductor MOSFET Transistors Channel Type P   Configuration Single  ON Semiconductor Configuration Single  MOSFET Transistors Configuration Single  ON Semiconductor MOSFET Transistors Configuration Single   Current, Drain 130 mA  ON Semiconductor Current, Drain 130 mA  MOSFET Transistors Current, Drain 130 mA  ON Semiconductor MOSFET Transistors Current, Drain 130 mA   Dimensions 3.04 x 1.4 x 1.01 mm  ON Semiconductor Dimensions 3.04 x 1.4 x 1.01 mm  MOSFET Transistors Dimensions 3.04 x 1.4 x 1.01 mm  ON Semiconductor MOSFET Transistors Dimensions 3.04 x 1.4 x 1.01 mm   Gate Charge, Total 6000 pC  ON Semiconductor Gate Charge, Total 6000 pC  MOSFET Transistors Gate Charge, Total 6000 pC  ON Semiconductor MOSFET Transistors Gate Charge, Total 6000 pC   Height 0.04" (1.01mm)  ON Semiconductor Height 0.04" (1.01mm)  MOSFET Transistors Height 0.04" (1.01mm)  ON Semiconductor MOSFET Transistors Height 0.04" (1.01mm)   Length 0.119" (3.04mm)  ON Semiconductor Length 0.119" (3.04mm)  MOSFET Transistors Length 0.119" (3.04mm)  ON Semiconductor MOSFET Transistors Length 0.119" (3.04mm)   Mounting Type Surface Mount  ON Semiconductor Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  ON Semiconductor MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  ON Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  ON Semiconductor MOSFET Transistors Number of Pins 3   Package Type SOT-23  ON Semiconductor Package Type SOT-23  MOSFET Transistors Package Type SOT-23  ON Semiconductor MOSFET Transistors Package Type SOT-23   Polarization P-Channel  ON Semiconductor Polarization P-Channel  MOSFET Transistors Polarization P-Channel  ON Semiconductor MOSFET Transistors Polarization P-Channel   Power Dissipation 225 mW  ON Semiconductor Power Dissipation 225 mW  MOSFET Transistors Power Dissipation 225 mW  ON Semiconductor MOSFET Transistors Power Dissipation 225 mW   Resistance, Drain to Source On 10 Ω  ON Semiconductor Resistance, Drain to Source On 10 Ω  MOSFET Transistors Resistance, Drain to Source On 10 Ω  ON Semiconductor MOSFET Transistors Resistance, Drain to Source On 10 Ω   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 12 ns  ON Semiconductor Time, Turn-Off Delay 12 ns  MOSFET Transistors Time, Turn-Off Delay 12 ns  ON Semiconductor MOSFET Transistors Time, Turn-Off Delay 12 ns   Time, Turn-On Delay 3.6 ns  ON Semiconductor Time, Turn-On Delay 3.6 ns  MOSFET Transistors Time, Turn-On Delay 3.6 ns  ON Semiconductor MOSFET Transistors Time, Turn-On Delay 3.6 ns   Transconductance, Forward 50 mS  ON Semiconductor Transconductance, Forward 50 mS  MOSFET Transistors Transconductance, Forward 50 mS  ON Semiconductor MOSFET Transistors Transconductance, Forward 50 mS   Typical Gate Charge @ Vgs 2.2 nC @ -10 V  ON Semiconductor Typical Gate Charge @ Vgs 2.2 nC @ -10 V  MOSFET Transistors Typical Gate Charge @ Vgs 2.2 nC @ -10 V  ON Semiconductor MOSFET Transistors Typical Gate Charge @ Vgs 2.2 nC @ -10 V   Voltage, Breakdown, Drain to Source 50 V  ON Semiconductor Voltage, Breakdown, Drain to Source 50 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 50 V  ON Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 50 V   Voltage, Drain to Source -50 V  ON Semiconductor Voltage, Drain to Source -50 V  MOSFET Transistors Voltage, Drain to Source -50 V  ON Semiconductor MOSFET Transistors Voltage, Drain to Source -50 V   Voltage, Forward, Diode 2.2 V  ON Semiconductor Voltage, Forward, Diode 2.2 V  MOSFET Transistors Voltage, Forward, Diode 2.2 V  ON Semiconductor MOSFET Transistors Voltage, Forward, Diode 2.2 V   Voltage, Gate to Source ±20 V  ON Semiconductor Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  ON Semiconductor MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.055" (1.4mm)  ON Semiconductor Width 0.055" (1.4mm)  MOSFET Transistors Width 0.055" (1.4mm)  ON Semiconductor MOSFET Transistors Width 0.055" (1.4mm)  
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