amphenol代理商
专业销售Amphenol（安费诺）全系列产品-英国2号仓库
库存查询
美国1号分类选型新加坡2号分类选型英国10号分类选型英国2号分类选型日本5号分类选型

在本站结果里搜索：    
热门搜索词:  Connectors  8910DPA43V02  Amphenol  UVZSeries 160VDC  70084122  IM21-14-CDTRI

MGSF1N03LT1G - 

MOSFET, Power; Single N-Ch; VDSS 30VDC; RDS(ON) 0.08Ohm; ID 1.6A; SOT-23 (TO-236)

ON Semiconductor MGSF1N03LT1G
声明：图片仅供参考，请以实物为准！
制造商产品编号：
MGSF1N03LT1G
仓库库存编号：
70099513
技术数据表：
View MGSF1N03LT1G Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

MGSF1N03LT1G产品信息

  Brand/Series  Power MOSFET Series  
  Capacitance, Input  140 pF @ 5 V  
  Channel Mode  Enhancement  
  Channel Type  N  
  Configuration  Single  
  Current, Drain  2.1 A  
  Dimensions  3.04 x 1.4 x 1.01 mm  
  Gate Charge, Total  6000 pC  
  Height  0.04" (1.01mm)  
  Length  0.119" (3.04mm)  
  Mounting Type  Surface Mount  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  SOT-23  
  Polarization  N-Channel  
  Power Dissipation  0.69 W  
  Resistance, Drain to Source On  0.145 Ω  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Time, Turn-Off Delay  16 ns  
  Time, Turn-On Delay  2.5 ns  
  Typical Gate Charge @ Vgs  6000 nC @  
  Voltage, Breakdown, Drain to Source  30 V  
  Voltage, Drain to Source  30 V  
  Voltage, Forward, Diode  0.8 V  
  Voltage, Gate to Source  ±20 V  
  Width  0.055" (1.4mm)  
关键词         

MGSF1N03LT1G相关搜索

Brand/Series Power MOSFET Series  ON Semiconductor Brand/Series Power MOSFET Series  MOSFET Transistors Brand/Series Power MOSFET Series  ON Semiconductor MOSFET Transistors Brand/Series Power MOSFET Series   Capacitance, Input 140 pF @ 5 V  ON Semiconductor Capacitance, Input 140 pF @ 5 V  MOSFET Transistors Capacitance, Input 140 pF @ 5 V  ON Semiconductor MOSFET Transistors Capacitance, Input 140 pF @ 5 V   Channel Mode Enhancement  ON Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  ON Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  ON Semiconductor Channel Type N  MOSFET Transistors Channel Type N  ON Semiconductor MOSFET Transistors Channel Type N   Configuration Single  ON Semiconductor Configuration Single  MOSFET Transistors Configuration Single  ON Semiconductor MOSFET Transistors Configuration Single   Current, Drain 2.1 A  ON Semiconductor Current, Drain 2.1 A  MOSFET Transistors Current, Drain 2.1 A  ON Semiconductor MOSFET Transistors Current, Drain 2.1 A   Dimensions 3.04 x 1.4 x 1.01 mm  ON Semiconductor Dimensions 3.04 x 1.4 x 1.01 mm  MOSFET Transistors Dimensions 3.04 x 1.4 x 1.01 mm  ON Semiconductor MOSFET Transistors Dimensions 3.04 x 1.4 x 1.01 mm   Gate Charge, Total 6000 pC  ON Semiconductor Gate Charge, Total 6000 pC  MOSFET Transistors Gate Charge, Total 6000 pC  ON Semiconductor MOSFET Transistors Gate Charge, Total 6000 pC   Height 0.04" (1.01mm)  ON Semiconductor Height 0.04" (1.01mm)  MOSFET Transistors Height 0.04" (1.01mm)  ON Semiconductor MOSFET Transistors Height 0.04" (1.01mm)   Length 0.119" (3.04mm)  ON Semiconductor Length 0.119" (3.04mm)  MOSFET Transistors Length 0.119" (3.04mm)  ON Semiconductor MOSFET Transistors Length 0.119" (3.04mm)   Mounting Type Surface Mount  ON Semiconductor Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  ON Semiconductor MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  ON Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  ON Semiconductor MOSFET Transistors Number of Pins 3   Package Type SOT-23  ON Semiconductor Package Type SOT-23  MOSFET Transistors Package Type SOT-23  ON Semiconductor MOSFET Transistors Package Type SOT-23   Polarization N-Channel  ON Semiconductor Polarization N-Channel  MOSFET Transistors Polarization N-Channel  ON Semiconductor MOSFET Transistors Polarization N-Channel   Power Dissipation 0.69 W  ON Semiconductor Power Dissipation 0.69 W  MOSFET Transistors Power Dissipation 0.69 W  ON Semiconductor MOSFET Transistors Power Dissipation 0.69 W   Resistance, Drain to Source On 0.145 Ω  ON Semiconductor Resistance, Drain to Source On 0.145 Ω  MOSFET Transistors Resistance, Drain to Source On 0.145 Ω  ON Semiconductor MOSFET Transistors Resistance, Drain to Source On 0.145 Ω   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 16 ns  ON Semiconductor Time, Turn-Off Delay 16 ns  MOSFET Transistors Time, Turn-Off Delay 16 ns  ON Semiconductor MOSFET Transistors Time, Turn-Off Delay 16 ns   Time, Turn-On Delay 2.5 ns  ON Semiconductor Time, Turn-On Delay 2.5 ns  MOSFET Transistors Time, Turn-On Delay 2.5 ns  ON Semiconductor MOSFET Transistors Time, Turn-On Delay 2.5 ns   Typical Gate Charge @ Vgs 6000 nC @  ON Semiconductor Typical Gate Charge @ Vgs 6000 nC @  MOSFET Transistors Typical Gate Charge @ Vgs 6000 nC @  ON Semiconductor MOSFET Transistors Typical Gate Charge @ Vgs 6000 nC @   Voltage, Breakdown, Drain to Source 30 V  ON Semiconductor Voltage, Breakdown, Drain to Source 30 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V  ON Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V   Voltage, Drain to Source 30 V  ON Semiconductor Voltage, Drain to Source 30 V  MOSFET Transistors Voltage, Drain to Source 30 V  ON Semiconductor MOSFET Transistors Voltage, Drain to Source 30 V   Voltage, Forward, Diode 0.8 V  ON Semiconductor Voltage, Forward, Diode 0.8 V  MOSFET Transistors Voltage, Forward, Diode 0.8 V  ON Semiconductor MOSFET Transistors Voltage, Forward, Diode 0.8 V   Voltage, Gate to Source ±20 V  ON Semiconductor Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  ON Semiconductor MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.055" (1.4mm)  ON Semiconductor Width 0.055" (1.4mm)  MOSFET Transistors Width 0.055" (1.4mm)  ON Semiconductor MOSFET Transistors Width 0.055" (1.4mm)  
电话:400-900-3095
QQ:800152669
关于我们 | Amphenol简介 | Amphenol产品 | Amphenol产品应用 | Amphenol动态 | 按系列选型 | 按产品规格选型 | Amphenol选型手册 | 付款方式 | 联系我们
Copyright © 2017 www.amphenol-connect.com All Rights Reserved. 技术支持：电子元器件 ICP备案证书号:粤ICP备11103613号