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Brand/Series	Transistor Series
Configuration	Common Base
Current, Collector	15 A
Current, Gain	10
Dimensions	39.37 x 8.51 x 26.67 mm
Frequency, Operating	2.2 MHz
Height	1.05" (26.67mm)
Length	1.55" (39.37mm)
Material	Si
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	2
Package Type	TO-204
Polarity	PNP
Power Dissipation	180 W
Primary Type	Si
Resistance, Thermal, Junction to Case	1.52 °C/W
Temperature, Operating, Maximum	+200 °C
Temperature, Operating, Minimum	-65 °C
Temperature, Operating, Range	-65 to +200 °C
Transistor Type	PNP
Type	High Power
Voltage, Breakdown, Collector to Emitter	120 V
Voltage, Collector to Base	200 V
Voltage, Collector to Emitter	120 V
Voltage, Collector to Emitter, Saturation	5 V
Voltage, Emitter to Base	7 V
Width	0.335" (8.51mm)
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• ON Semiconductor
  TRANSISTOR; NPN; 100; 100; 7.0; 4 ADC COLLECTOR; 10 ADC IB; 15W; 15 HFE MIN.
  
  型号：MJE243G
  仓库库存编号：70099519
  
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• ON Semiconductor
  PNP-SI, TRANSISTOR; PNP; 100VDC; 100VDC; 7VDC; 4 ADC COLLECTOR; 10 ADC IB; 15W
  
  型号：MJE253G
  仓库库存编号：70099634
  
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• ON Semiconductor
  ON Semi MJ15015G NPN Bipolar Transistor, 15 A, 120 V, 2-Pin TO-204AA
  
  型号：MJ15015G
  仓库库存编号：70099993
  
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• Excelitas Technologies Sensors
  Optocoupler; Analog; Axial; Photocell; Vactrol; 40 mA (LED)
  
  型号：VTL5C1
  仓库库存编号：70219695
  
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Brand/Series Transistor Series  ON Semiconductor Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  ON Semiconductor Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  ON Semiconductor Configuration Common Base  Bipolar Transistors Configuration Common Base  ON Semiconductor Bipolar Transistors Configuration Common Base   Current, Collector 15 A  ON Semiconductor Current, Collector 15 A  Bipolar Transistors Current, Collector 15 A  ON Semiconductor Bipolar Transistors Current, Collector 15 A   Current, Gain 10  ON Semiconductor Current, Gain 10  Bipolar Transistors Current, Gain 10  ON Semiconductor Bipolar Transistors Current, Gain 10   Dimensions 39.37 x 8.51 x 26.67 mm  ON Semiconductor Dimensions 39.37 x 8.51 x 26.67 mm  Bipolar Transistors Dimensions 39.37 x 8.51 x 26.67 mm  ON Semiconductor Bipolar Transistors Dimensions 39.37 x 8.51 x 26.67 mm   Frequency, Operating 2.2 MHz  ON Semiconductor Frequency, Operating 2.2 MHz  Bipolar Transistors Frequency, Operating 2.2 MHz  ON Semiconductor Bipolar Transistors Frequency, Operating 2.2 MHz   Height 1.05" (26.67mm)  ON Semiconductor Height 1.05" (26.67mm)  Bipolar Transistors Height 1.05" (26.67mm)  ON Semiconductor Bipolar Transistors Height 1.05" (26.67mm)   Length 1.55" (39.37mm)  ON Semiconductor Length 1.55" (39.37mm)  Bipolar Transistors Length 1.55" (39.37mm)  ON Semiconductor Bipolar Transistors Length 1.55" (39.37mm)   Material Si  ON Semiconductor Material Si  Bipolar Transistors Material Si  ON Semiconductor Bipolar Transistors Material Si   Mounting Type Through Hole  ON Semiconductor Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  ON Semiconductor Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  ON Semiconductor Bipolar Transistors Number of Elements per Chip 1   Number of Pins 2  ON Semiconductor Number of Pins 2  Bipolar Transistors Number of Pins 2  ON Semiconductor Bipolar Transistors Number of Pins 2   Package Type TO-204  ON Semiconductor Package Type TO-204  Bipolar Transistors Package Type TO-204  ON Semiconductor Bipolar Transistors Package Type TO-204   Polarity PNP  ON Semiconductor Polarity PNP  Bipolar Transistors Polarity PNP  ON Semiconductor Bipolar Transistors Polarity PNP   Power Dissipation 180 W  ON Semiconductor Power Dissipation 180 W  Bipolar Transistors Power Dissipation 180 W  ON Semiconductor Bipolar Transistors Power Dissipation 180 W   Primary Type Si  ON Semiconductor Primary Type Si  Bipolar Transistors Primary Type Si  ON Semiconductor Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 1.52 °C/W  ON Semiconductor Resistance, Thermal, Junction to Case 1.52 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 1.52 °C/W  ON Semiconductor Bipolar Transistors Resistance, Thermal, Junction to Case 1.52 °C/W   Temperature, Operating, Maximum +200 °C  ON Semiconductor Temperature, Operating, Maximum +200 °C  Bipolar Transistors Temperature, Operating, Maximum +200 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Maximum +200 °C   Temperature, Operating, Minimum -65 °C  ON Semiconductor Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +200 °C  ON Semiconductor Temperature, Operating, Range -65 to +200 °C  Bipolar Transistors Temperature, Operating, Range -65 to +200 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Range -65 to +200 °C   Transistor Type PNP  ON Semiconductor Transistor Type PNP  Bipolar Transistors Transistor Type PNP  ON Semiconductor Bipolar Transistors Transistor Type PNP   Type High Power  ON Semiconductor Type High Power  Bipolar Transistors Type High Power  ON Semiconductor Bipolar Transistors Type High Power   Voltage, Breakdown, Collector to Emitter 120 V  ON Semiconductor Voltage, Breakdown, Collector to Emitter 120 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 120 V  ON Semiconductor Bipolar Transistors Voltage, Breakdown, Collector to Emitter 120 V   Voltage, Collector to Base 200 V  ON Semiconductor Voltage, Collector to Base 200 V  Bipolar Transistors Voltage, Collector to Base 200 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Base 200 V   Voltage, Collector to Emitter 120 V  ON Semiconductor Voltage, Collector to Emitter 120 V  Bipolar Transistors Voltage, Collector to Emitter 120 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter 120 V   Voltage, Collector to Emitter, Saturation 5 V  ON Semiconductor Voltage, Collector to Emitter, Saturation 5 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 5 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation 5 V   Voltage, Emitter to Base 7 V  ON Semiconductor Voltage, Emitter to Base 7 V  Bipolar Transistors Voltage, Emitter to Base 7 V  ON Semiconductor Bipolar Transistors Voltage, Emitter to Base 7 V   Width 0.335" (8.51mm)  ON Semiconductor Width 0.335" (8.51mm)  Bipolar Transistors Width 0.335" (8.51mm)  ON Semiconductor Bipolar Transistors Width 0.335" (8.51mm)