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NPN Power Transistors, ON Semiconductor
These ON Semiconductor transistors can amplify analog or digital signals. They can also switch DC or function as an oscillator.

Brand/Series	Transistor Series
Configuration	Common Base
Current, Collector	16 A
Current, Gain	8
Dimensions	39.37 x 8.51 x 26.67 mm
Frequency, Operating	4 MHz
Height	1.05" (26.67mm)
Length	1.55" (39.37mm)
Material	Si
Mounting Type	Through Hole
Number of Elements per Chip	2
Number of Pins	2
Package Type	TO-3
Polarity	NPN
Power Dissipation	250 W
Primary Type	Si
Resistance, Thermal, Junction to Case	0.7 °C/W
Temperature, Operating, Maximum	+200 °C
Temperature, Operating, Minimum	-65 °C
Temperature, Operating, Range	-65 to +200 °C
Transistor Type	NPN
Type	Power
Voltage, Breakdown, Collector to Emitter	250 V
Voltage, Collector to Base	400 V
Voltage, Collector to Emitter	250 V
Voltage, Collector to Emitter, Saturation	4 V
Voltage, Emitter to Base	5 V
Width	0.335" (8.51mm)
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• ON Semiconductor
  ON Semi MJ21193G PNP Bipolar Transistor, 16 A, 250 V, 2-Pin TO-204AA
  
  型号：MJ21193G
  仓库库存编号：70099998
  
• 
  
  
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Brand/Series Transistor Series  ON Semiconductor Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  ON Semiconductor Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  ON Semiconductor Configuration Common Base  Bipolar Transistors Configuration Common Base  ON Semiconductor Bipolar Transistors Configuration Common Base   Current, Collector 16 A  ON Semiconductor Current, Collector 16 A  Bipolar Transistors Current, Collector 16 A  ON Semiconductor Bipolar Transistors Current, Collector 16 A   Current, Gain 8  ON Semiconductor Current, Gain 8  Bipolar Transistors Current, Gain 8  ON Semiconductor Bipolar Transistors Current, Gain 8   Dimensions 39.37 x 8.51 x 26.67 mm  ON Semiconductor Dimensions 39.37 x 8.51 x 26.67 mm  Bipolar Transistors Dimensions 39.37 x 8.51 x 26.67 mm  ON Semiconductor Bipolar Transistors Dimensions 39.37 x 8.51 x 26.67 mm   Frequency, Operating 4 MHz  ON Semiconductor Frequency, Operating 4 MHz  Bipolar Transistors Frequency, Operating 4 MHz  ON Semiconductor Bipolar Transistors Frequency, Operating 4 MHz   Height 1.05" (26.67mm)  ON Semiconductor Height 1.05" (26.67mm)  Bipolar Transistors Height 1.05" (26.67mm)  ON Semiconductor Bipolar Transistors Height 1.05" (26.67mm)   Length 1.55" (39.37mm)  ON Semiconductor Length 1.55" (39.37mm)  Bipolar Transistors Length 1.55" (39.37mm)  ON Semiconductor Bipolar Transistors Length 1.55" (39.37mm)   Material Si  ON Semiconductor Material Si  Bipolar Transistors Material Si  ON Semiconductor Bipolar Transistors Material Si   Mounting Type Through Hole  ON Semiconductor Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  ON Semiconductor Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 2  ON Semiconductor Number of Elements per Chip 2  Bipolar Transistors Number of Elements per Chip 2  ON Semiconductor Bipolar Transistors Number of Elements per Chip 2   Number of Pins 2  ON Semiconductor Number of Pins 2  Bipolar Transistors Number of Pins 2  ON Semiconductor Bipolar Transistors Number of Pins 2   Package Type TO-3  ON Semiconductor Package Type TO-3  Bipolar Transistors Package Type TO-3  ON Semiconductor Bipolar Transistors Package Type TO-3   Polarity NPN  ON Semiconductor Polarity NPN  Bipolar Transistors Polarity NPN  ON Semiconductor Bipolar Transistors Polarity NPN   Power Dissipation 250 W  ON Semiconductor Power Dissipation 250 W  Bipolar Transistors Power Dissipation 250 W  ON Semiconductor Bipolar Transistors Power Dissipation 250 W   Primary Type Si  ON Semiconductor Primary Type Si  Bipolar Transistors Primary Type Si  ON Semiconductor Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 0.7 °C/W  ON Semiconductor Resistance, Thermal, Junction to Case 0.7 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 0.7 °C/W  ON Semiconductor Bipolar Transistors Resistance, Thermal, Junction to Case 0.7 °C/W   Temperature, Operating, Maximum +200 °C  ON Semiconductor Temperature, Operating, Maximum +200 °C  Bipolar Transistors Temperature, Operating, Maximum +200 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Maximum +200 °C   Temperature, Operating, Minimum -65 °C  ON Semiconductor Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +200 °C  ON Semiconductor Temperature, Operating, Range -65 to +200 °C  Bipolar Transistors Temperature, Operating, Range -65 to +200 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Range -65 to +200 °C   Transistor Type NPN  ON Semiconductor Transistor Type NPN  Bipolar Transistors Transistor Type NPN  ON Semiconductor Bipolar Transistors Transistor Type NPN   Type Power  ON Semiconductor Type Power  Bipolar Transistors Type Power  ON Semiconductor Bipolar Transistors Type Power   Voltage, Breakdown, Collector to Emitter 250 V  ON Semiconductor Voltage, Breakdown, Collector to Emitter 250 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 250 V  ON Semiconductor Bipolar Transistors Voltage, Breakdown, Collector to Emitter 250 V   Voltage, Collector to Base 400 V  ON Semiconductor Voltage, Collector to Base 400 V  Bipolar Transistors Voltage, Collector to Base 400 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Base 400 V   Voltage, Collector to Emitter 250 V  ON Semiconductor Voltage, Collector to Emitter 250 V  Bipolar Transistors Voltage, Collector to Emitter 250 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter 250 V   Voltage, Collector to Emitter, Saturation 4 V  ON Semiconductor Voltage, Collector to Emitter, Saturation 4 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 4 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation 4 V   Voltage, Emitter to Base 5 V  ON Semiconductor Voltage, Emitter to Base 5 V  Bipolar Transistors Voltage, Emitter to Base 5 V  ON Semiconductor Bipolar Transistors Voltage, Emitter to Base 5 V   Width 0.335" (8.51mm)  ON Semiconductor Width 0.335" (8.51mm)  Bipolar Transistors Width 0.335" (8.51mm)  ON Semiconductor Bipolar Transistors Width 0.335" (8.51mm)