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NPN Power Transistors, ON Semiconductor
These ON Semiconductor transistors can amplify analog or digital signals. They can also switch DC or function as an oscillator.

Brand/Series	Transistor Series
Configuration	Common Base
Current, Collector	30 A
Current, Gain	25
Dimensions	39.37 x 8.51 x 26.67 mm
Frequency, Operating	2 MHz
Height	1.05" (26.67mm)
Length	1.55" (39.37mm)
Material	Si
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	2
Package Type	TO-204AA
Polarity	NPN
Power Dissipation	200 W
Primary Type	Si
Resistance, Thermal, Junction to Case	0.875 °C/W
Temperature, Operating, Maximum	+200 °C
Temperature, Operating, Minimum	-65 °C
Temperature, Operating, Range	-65 to +200 °C
Transistor Type	NPN
Type	High Power
Voltage, Breakdown, Collector to Emitter	100 V
Voltage, Collector to Base	100 V
Voltage, Collector to Emitter	100 V
Voltage, Collector to Emitter, Saturation	0.8 V
Voltage, Emitter to Base	4 V
Voltage, Saturation, Base to Emitter	1.3 V
Width	0.335" (8.51mm)
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• Panasonic
  Proximity Sensor; inductive; Rectangular; Front Sense 4.0mm; NO; NPN
  
  型号：GX-F12A
  仓库库存编号：70036362
  
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• ON Semiconductor
  PNP-SI, TRANSISTOR; PNP; 100VDC; 100VDC; 4VDC; 30 ADC COLLECTOR; 7.5 ADC IB
  
  型号：MJ4502G
  仓库库存编号：70100134
  
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Brand/Series Transistor Series  ON Semiconductor Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  ON Semiconductor Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  ON Semiconductor Configuration Common Base  Bipolar Transistors Configuration Common Base  ON Semiconductor Bipolar Transistors Configuration Common Base   Current, Collector 30 A  ON Semiconductor Current, Collector 30 A  Bipolar Transistors Current, Collector 30 A  ON Semiconductor Bipolar Transistors Current, Collector 30 A   Current, Gain 25  ON Semiconductor Current, Gain 25  Bipolar Transistors Current, Gain 25  ON Semiconductor Bipolar Transistors Current, Gain 25   Dimensions 39.37 x 8.51 x 26.67 mm  ON Semiconductor Dimensions 39.37 x 8.51 x 26.67 mm  Bipolar Transistors Dimensions 39.37 x 8.51 x 26.67 mm  ON Semiconductor Bipolar Transistors Dimensions 39.37 x 8.51 x 26.67 mm   Frequency, Operating 2 MHz  ON Semiconductor Frequency, Operating 2 MHz  Bipolar Transistors Frequency, Operating 2 MHz  ON Semiconductor Bipolar Transistors Frequency, Operating 2 MHz   Height 1.05" (26.67mm)  ON Semiconductor Height 1.05" (26.67mm)  Bipolar Transistors Height 1.05" (26.67mm)  ON Semiconductor Bipolar Transistors Height 1.05" (26.67mm)   Length 1.55" (39.37mm)  ON Semiconductor Length 1.55" (39.37mm)  Bipolar Transistors Length 1.55" (39.37mm)  ON Semiconductor Bipolar Transistors Length 1.55" (39.37mm)   Material Si  ON Semiconductor Material Si  Bipolar Transistors Material Si  ON Semiconductor Bipolar Transistors Material Si   Mounting Type Through Hole  ON Semiconductor Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  ON Semiconductor Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  ON Semiconductor Bipolar Transistors Number of Elements per Chip 1   Number of Pins 2  ON Semiconductor Number of Pins 2  Bipolar Transistors Number of Pins 2  ON Semiconductor Bipolar Transistors Number of Pins 2   Package Type TO-204AA  ON Semiconductor Package Type TO-204AA  Bipolar Transistors Package Type TO-204AA  ON Semiconductor Bipolar Transistors Package Type TO-204AA   Polarity NPN  ON Semiconductor Polarity NPN  Bipolar Transistors Polarity NPN  ON Semiconductor Bipolar Transistors Polarity NPN   Power Dissipation 200 W  ON Semiconductor Power Dissipation 200 W  Bipolar Transistors Power Dissipation 200 W  ON Semiconductor Bipolar Transistors Power Dissipation 200 W   Primary Type Si  ON Semiconductor Primary Type Si  Bipolar Transistors Primary Type Si  ON Semiconductor Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 0.875 °C/W  ON Semiconductor Resistance, Thermal, Junction to Case 0.875 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 0.875 °C/W  ON Semiconductor Bipolar Transistors Resistance, Thermal, Junction to Case 0.875 °C/W   Temperature, Operating, Maximum +200 °C  ON Semiconductor Temperature, Operating, Maximum +200 °C  Bipolar Transistors Temperature, Operating, Maximum +200 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Maximum +200 °C   Temperature, Operating, Minimum -65 °C  ON Semiconductor Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +200 °C  ON Semiconductor Temperature, Operating, Range -65 to +200 °C  Bipolar Transistors Temperature, Operating, Range -65 to +200 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Range -65 to +200 °C   Transistor Type NPN  ON Semiconductor Transistor Type NPN  Bipolar Transistors Transistor Type NPN  ON Semiconductor Bipolar Transistors Transistor Type NPN   Type High Power  ON Semiconductor Type High Power  Bipolar Transistors Type High Power  ON Semiconductor Bipolar Transistors Type High Power   Voltage, Breakdown, Collector to Emitter 100 V  ON Semiconductor Voltage, Breakdown, Collector to Emitter 100 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 100 V  ON Semiconductor Bipolar Transistors Voltage, Breakdown, Collector to Emitter 100 V   Voltage, Collector to Base 100 V  ON Semiconductor Voltage, Collector to Base 100 V  Bipolar Transistors Voltage, Collector to Base 100 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Base 100 V   Voltage, Collector to Emitter 100 V  ON Semiconductor Voltage, Collector to Emitter 100 V  Bipolar Transistors Voltage, Collector to Emitter 100 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter 100 V   Voltage, Collector to Emitter, Saturation 0.8 V  ON Semiconductor Voltage, Collector to Emitter, Saturation 0.8 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.8 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.8 V   Voltage, Emitter to Base 4 V  ON Semiconductor Voltage, Emitter to Base 4 V  Bipolar Transistors Voltage, Emitter to Base 4 V  ON Semiconductor Bipolar Transistors Voltage, Emitter to Base 4 V   Voltage, Saturation, Base to Emitter 1.3 V  ON Semiconductor Voltage, Saturation, Base to Emitter 1.3 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 1.3 V  ON Semiconductor Bipolar Transistors Voltage, Saturation, Base to Emitter 1.3 V   Width 0.335" (8.51mm)  ON Semiconductor Width 0.335" (8.51mm)  Bipolar Transistors Width 0.335" (8.51mm)  ON Semiconductor Bipolar Transistors Width 0.335" (8.51mm)