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MJE15032G - 

Transistor, Bipolar; NPN Bipolar; Silicon; TO-220; 250; 250; 5; 8 Adc Collector

ON Semiconductor MJE15032G
声明：图片仅供参考，请以实物为准！
制造商产品编号：
MJE15032G
仓库库存编号：
70099654
技术数据表：
View MJE15032G Datasheet Datasheet
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由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

MJE15032G产品信息

  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  16 A  
  Current, Gain  10  
  Dimensions  10.28 x 4.82 x 15.75 mm  
  Frequency, Operating  30 MHz  
  Height  0.62" (15.75mm)  
  Length  0.404" (10.28mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-220  
  Polarity  NPN  
  Power Dissipation  50 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  2.5 °C/W  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -65 °C  
  Temperature, Operating, Range  -65 to +150 °C  
  Transistor Type  NPN  
  Type  Power  
  Voltage, Breakdown, Collector to Emitter  250 V  
  Voltage, Collector to Base  250 V  
  Voltage, Collector to Emitter  250 V  
  Voltage, Collector to Emitter, Saturation  0.5 V  
  Voltage, Emitter to Base  5 V  
  Width  0.19" (4.82mm)  
关键词         

MJE15032G相关搜索

Brand/Series Transistor Series  ON Semiconductor Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  ON Semiconductor Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  ON Semiconductor Configuration Common Base  Bipolar Transistors Configuration Common Base  ON Semiconductor Bipolar Transistors Configuration Common Base   Current, Collector 16 A  ON Semiconductor Current, Collector 16 A  Bipolar Transistors Current, Collector 16 A  ON Semiconductor Bipolar Transistors Current, Collector 16 A   Current, Gain 10  ON Semiconductor Current, Gain 10  Bipolar Transistors Current, Gain 10  ON Semiconductor Bipolar Transistors Current, Gain 10   Dimensions 10.28 x 4.82 x 15.75 mm  ON Semiconductor Dimensions 10.28 x 4.82 x 15.75 mm  Bipolar Transistors Dimensions 10.28 x 4.82 x 15.75 mm  ON Semiconductor Bipolar Transistors Dimensions 10.28 x 4.82 x 15.75 mm   Frequency, Operating 30 MHz  ON Semiconductor Frequency, Operating 30 MHz  Bipolar Transistors Frequency, Operating 30 MHz  ON Semiconductor Bipolar Transistors Frequency, Operating 30 MHz   Height 0.62" (15.75mm)  ON Semiconductor Height 0.62" (15.75mm)  Bipolar Transistors Height 0.62" (15.75mm)  ON Semiconductor Bipolar Transistors Height 0.62" (15.75mm)   Length 0.404" (10.28mm)  ON Semiconductor Length 0.404" (10.28mm)  Bipolar Transistors Length 0.404" (10.28mm)  ON Semiconductor Bipolar Transistors Length 0.404" (10.28mm)   Material Si  ON Semiconductor Material Si  Bipolar Transistors Material Si  ON Semiconductor Bipolar Transistors Material Si   Mounting Type Through Hole  ON Semiconductor Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  ON Semiconductor Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  ON Semiconductor Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  Bipolar Transistors Number of Pins 3  ON Semiconductor Bipolar Transistors Number of Pins 3   Package Type TO-220  ON Semiconductor Package Type TO-220  Bipolar Transistors Package Type TO-220  ON Semiconductor Bipolar Transistors Package Type TO-220   Polarity NPN  ON Semiconductor Polarity NPN  Bipolar Transistors Polarity NPN  ON Semiconductor Bipolar Transistors Polarity NPN   Power Dissipation 50 W  ON Semiconductor Power Dissipation 50 W  Bipolar Transistors Power Dissipation 50 W  ON Semiconductor Bipolar Transistors Power Dissipation 50 W   Primary Type Si  ON Semiconductor Primary Type Si  Bipolar Transistors Primary Type Si  ON Semiconductor Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 2.5 °C/W  ON Semiconductor Resistance, Thermal, Junction to Case 2.5 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 2.5 °C/W  ON Semiconductor Bipolar Transistors Resistance, Thermal, Junction to Case 2.5 °C/W   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -65 °C  ON Semiconductor Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +150 °C  ON Semiconductor Temperature, Operating, Range -65 to +150 °C  Bipolar Transistors Temperature, Operating, Range -65 to +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Range -65 to +150 °C   Transistor Type NPN  ON Semiconductor Transistor Type NPN  Bipolar Transistors Transistor Type NPN  ON Semiconductor Bipolar Transistors Transistor Type NPN   Type Power  ON Semiconductor Type Power  Bipolar Transistors Type Power  ON Semiconductor Bipolar Transistors Type Power   Voltage, Breakdown, Collector to Emitter 250 V  ON Semiconductor Voltage, Breakdown, Collector to Emitter 250 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 250 V  ON Semiconductor Bipolar Transistors Voltage, Breakdown, Collector to Emitter 250 V   Voltage, Collector to Base 250 V  ON Semiconductor Voltage, Collector to Base 250 V  Bipolar Transistors Voltage, Collector to Base 250 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Base 250 V   Voltage, Collector to Emitter 250 V  ON Semiconductor Voltage, Collector to Emitter 250 V  Bipolar Transistors Voltage, Collector to Emitter 250 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter 250 V   Voltage, Collector to Emitter, Saturation 0.5 V  ON Semiconductor Voltage, Collector to Emitter, Saturation 0.5 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.5 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.5 V   Voltage, Emitter to Base 5 V  ON Semiconductor Voltage, Emitter to Base 5 V  Bipolar Transistors Voltage, Emitter to Base 5 V  ON Semiconductor Bipolar Transistors Voltage, Emitter to Base 5 V   Width 0.19" (4.82mm)  ON Semiconductor Width 0.19" (4.82mm)  Bipolar Transistors Width 0.19" (4.82mm)  ON Semiconductor Bipolar Transistors Width 0.19" (4.82mm)  
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