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MJE350G - 

ON Semi MJE350G PNP High Voltage Bipolar Transistor, 0.5 A, 300 V, 3-Pin TO-225

ON Semiconductor MJE350G
声明：图片仅供参考，请以实物为准！
制造商产品编号：
MJE350G
仓库库存编号：
70100015
技术数据表：
View MJE350G Datasheet Datasheet
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由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

MJE350G产品信息

  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  500 mA  
  Current, Gain  240  
  Dimensions  7.80 x 3.00 x 11.10 mm  
  Height  0.437" (11.1mm)  
  Length  0.307" (7.8mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-225  
  Polarity  PNP  
  Power Dissipation  20 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  6.25 °C/W  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -65 °C  
  Temperature, Operating, Range  -65 to +150 °C  
  Transistor Type  PNP  
  Type  Medium Power  
  Voltage, Breakdown, Collector to Emitter  300 V  
  Voltage, Collector to Emitter  300 V  
  Voltage, Emitter to Base  3 V  
  Width  0.118" (3mm)  
关键词         

MJE350G相关搜索

Brand/Series Transistor Series  ON Semiconductor Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  ON Semiconductor Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  ON Semiconductor Configuration Common Base  Bipolar Transistors Configuration Common Base  ON Semiconductor Bipolar Transistors Configuration Common Base   Current, Collector 500 mA  ON Semiconductor Current, Collector 500 mA  Bipolar Transistors Current, Collector 500 mA  ON Semiconductor Bipolar Transistors Current, Collector 500 mA   Current, Gain 240  ON Semiconductor Current, Gain 240  Bipolar Transistors Current, Gain 240  ON Semiconductor Bipolar Transistors Current, Gain 240   Dimensions 7.80 x 3.00 x 11.10 mm  ON Semiconductor Dimensions 7.80 x 3.00 x 11.10 mm  Bipolar Transistors Dimensions 7.80 x 3.00 x 11.10 mm  ON Semiconductor Bipolar Transistors Dimensions 7.80 x 3.00 x 11.10 mm   Height 0.437" (11.1mm)  ON Semiconductor Height 0.437" (11.1mm)  Bipolar Transistors Height 0.437" (11.1mm)  ON Semiconductor Bipolar Transistors Height 0.437" (11.1mm)   Length 0.307" (7.8mm)  ON Semiconductor Length 0.307" (7.8mm)  Bipolar Transistors Length 0.307" (7.8mm)  ON Semiconductor Bipolar Transistors Length 0.307" (7.8mm)   Material Si  ON Semiconductor Material Si  Bipolar Transistors Material Si  ON Semiconductor Bipolar Transistors Material Si   Mounting Type Through Hole  ON Semiconductor Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  ON Semiconductor Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  ON Semiconductor Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  Bipolar Transistors Number of Pins 3  ON Semiconductor Bipolar Transistors Number of Pins 3   Package Type TO-225  ON Semiconductor Package Type TO-225  Bipolar Transistors Package Type TO-225  ON Semiconductor Bipolar Transistors Package Type TO-225   Polarity PNP  ON Semiconductor Polarity PNP  Bipolar Transistors Polarity PNP  ON Semiconductor Bipolar Transistors Polarity PNP   Power Dissipation 20 W  ON Semiconductor Power Dissipation 20 W  Bipolar Transistors Power Dissipation 20 W  ON Semiconductor Bipolar Transistors Power Dissipation 20 W   Primary Type Si  ON Semiconductor Primary Type Si  Bipolar Transistors Primary Type Si  ON Semiconductor Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 6.25 °C/W  ON Semiconductor Resistance, Thermal, Junction to Case 6.25 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 6.25 °C/W  ON Semiconductor Bipolar Transistors Resistance, Thermal, Junction to Case 6.25 °C/W   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -65 °C  ON Semiconductor Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +150 °C  ON Semiconductor Temperature, Operating, Range -65 to +150 °C  Bipolar Transistors Temperature, Operating, Range -65 to +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Range -65 to +150 °C   Transistor Type PNP  ON Semiconductor Transistor Type PNP  Bipolar Transistors Transistor Type PNP  ON Semiconductor Bipolar Transistors Transistor Type PNP   Type Medium Power  ON Semiconductor Type Medium Power  Bipolar Transistors Type Medium Power  ON Semiconductor Bipolar Transistors Type Medium Power   Voltage, Breakdown, Collector to Emitter 300 V  ON Semiconductor Voltage, Breakdown, Collector to Emitter 300 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 300 V  ON Semiconductor Bipolar Transistors Voltage, Breakdown, Collector to Emitter 300 V   Voltage, Collector to Emitter 300 V  ON Semiconductor Voltage, Collector to Emitter 300 V  Bipolar Transistors Voltage, Collector to Emitter 300 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter 300 V   Voltage, Emitter to Base 3 V  ON Semiconductor Voltage, Emitter to Base 3 V  Bipolar Transistors Voltage, Emitter to Base 3 V  ON Semiconductor Bipolar Transistors Voltage, Emitter to Base 3 V   Width 0.118" (3mm)  ON Semiconductor Width 0.118" (3mm)  Bipolar Transistors Width 0.118" (3mm)  ON Semiconductor Bipolar Transistors Width 0.118" (3mm)  
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