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MJE4353G - 

TRANS PNP 160V 16A TO218

ON Semiconductor MJE4353G
声明:图片仅供参考,请以实物为准!
制造商产品编号:
MJE4353G
仓库库存编号:
70100017
技术数据表:
View MJE4353G Datasheet Datasheet
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MJE4353G产品信息

  Brand/Series  Transistor Series  
  Current, Collector  16 A  
  Current, Gain  15  
  Frequency  1 MHz  
  Package Type  TO-218  
  Polarity  PNP  
  Power Dissipation  125 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  1 °C/W  
  Type  High Voltage, Power  
  Voltage, Breakdown, Collector to Emitter  160 V  
  Voltage, Collector to Base  160 V  
  Voltage, Collector to Emitter  160 V  
  Voltage, Collector to Emitter, Saturation  3.5 V  
  Voltage, Emitter to Base  7 V  
关键词         

MJE4353G相关搜索

Brand/Series Transistor Series  ON Semiconductor Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  ON Semiconductor Bipolar Transistors Brand/Series Transistor Series   Current, Collector 16 A  ON Semiconductor Current, Collector 16 A  Bipolar Transistors Current, Collector 16 A  ON Semiconductor Bipolar Transistors Current, Collector 16 A   Current, Gain 15  ON Semiconductor Current, Gain 15  Bipolar Transistors Current, Gain 15  ON Semiconductor Bipolar Transistors Current, Gain 15   Frequency 1 MHz  ON Semiconductor Frequency 1 MHz  Bipolar Transistors Frequency 1 MHz  ON Semiconductor Bipolar Transistors Frequency 1 MHz   Package Type TO-218  ON Semiconductor Package Type TO-218  Bipolar Transistors Package Type TO-218  ON Semiconductor Bipolar Transistors Package Type TO-218   Polarity PNP  ON Semiconductor Polarity PNP  Bipolar Transistors Polarity PNP  ON Semiconductor Bipolar Transistors Polarity PNP   Power Dissipation 125 W  ON Semiconductor Power Dissipation 125 W  Bipolar Transistors Power Dissipation 125 W  ON Semiconductor Bipolar Transistors Power Dissipation 125 W   Primary Type Si  ON Semiconductor Primary Type Si  Bipolar Transistors Primary Type Si  ON Semiconductor Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 1 °C/W  ON Semiconductor Resistance, Thermal, Junction to Case 1 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 1 °C/W  ON Semiconductor Bipolar Transistors Resistance, Thermal, Junction to Case 1 °C/W   Type High Voltage, Power  ON Semiconductor Type High Voltage, Power  Bipolar Transistors Type High Voltage, Power  ON Semiconductor Bipolar Transistors Type High Voltage, Power   Voltage, Breakdown, Collector to Emitter 160 V  ON Semiconductor Voltage, Breakdown, Collector to Emitter 160 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 160 V  ON Semiconductor Bipolar Transistors Voltage, Breakdown, Collector to Emitter 160 V   Voltage, Collector to Base 160 V  ON Semiconductor Voltage, Collector to Base 160 V  Bipolar Transistors Voltage, Collector to Base 160 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Base 160 V   Voltage, Collector to Emitter 160 V  ON Semiconductor Voltage, Collector to Emitter 160 V  Bipolar Transistors Voltage, Collector to Emitter 160 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter 160 V   Voltage, Collector to Emitter, Saturation 3.5 V  ON Semiconductor Voltage, Collector to Emitter, Saturation 3.5 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 3.5 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation 3.5 V   Voltage, Emitter to Base 7 V  ON Semiconductor Voltage, Emitter to Base 7 V  Bipolar Transistors Voltage, Emitter to Base 7 V  ON Semiconductor Bipolar Transistors Voltage, Emitter to Base 7 V  
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