amphenol代理商
专业销售Amphenol（安费诺）全系列产品-英国2号仓库
库存查询
美国1号分类选型新加坡2号分类选型英国10号分类选型英国2号分类选型日本5号分类选型

在本站结果里搜索：    
热门搜索词:  Connectors  8910DPA43V02  Amphenol  UVZSeries 160VDC  70084122  IM21-14-CDTRI

MJL21194G - 

ON Semi MJL21194G NPN Bipolar Transistor, 16 A, 250 V, 3-Pin TO-3BPL

ON Semiconductor MJL21194G
声明：图片仅供参考，请以实物为准！
制造商产品编号：
MJL21194G
仓库库存编号：
70100025
技术数据表：
View MJL21194G Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

MJL21194G产品概述

NPN Power Transistors, ON Semiconductor
These ON Semiconductor transistors can amplify analog or digital signals. They can also switch DC or function as an oscillator.

MJL21194G产品信息

  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  16 A  
  Current, Gain  8  
  Dimensions  20.3 x 5.3 x 26.4 mm  
  Frequency, Operating  4 MHz  
  Height  1.039" (26.4mm)  
  Length  0.799" (20.3mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-264  
  Polarity  NPN  
  Power Dissipation  200 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  0.7 °C/W  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -65 °C  
  Temperature, Operating, Range  -65 to +150 °C  
  Transistor Type  NPN  
  Type  Power  
  Voltage, Breakdown, Collector to Emitter  250 V  
  Voltage, Collector to Base  400 V  
  Voltage, Collector to Emitter  250 V  
  Voltage, Collector to Emitter, Saturation  4 V  
  Voltage, Emitter to Base  5 V  
  Width  0.209" (5.3mm)  
关键词         

MJL21194G相关搜索

Brand/Series Transistor Series  ON Semiconductor Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  ON Semiconductor Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  ON Semiconductor Configuration Common Base  Bipolar Transistors Configuration Common Base  ON Semiconductor Bipolar Transistors Configuration Common Base   Current, Collector 16 A  ON Semiconductor Current, Collector 16 A  Bipolar Transistors Current, Collector 16 A  ON Semiconductor Bipolar Transistors Current, Collector 16 A   Current, Gain 8  ON Semiconductor Current, Gain 8  Bipolar Transistors Current, Gain 8  ON Semiconductor Bipolar Transistors Current, Gain 8   Dimensions 20.3 x 5.3 x 26.4 mm  ON Semiconductor Dimensions 20.3 x 5.3 x 26.4 mm  Bipolar Transistors Dimensions 20.3 x 5.3 x 26.4 mm  ON Semiconductor Bipolar Transistors Dimensions 20.3 x 5.3 x 26.4 mm   Frequency, Operating 4 MHz  ON Semiconductor Frequency, Operating 4 MHz  Bipolar Transistors Frequency, Operating 4 MHz  ON Semiconductor Bipolar Transistors Frequency, Operating 4 MHz   Height 1.039" (26.4mm)  ON Semiconductor Height 1.039" (26.4mm)  Bipolar Transistors Height 1.039" (26.4mm)  ON Semiconductor Bipolar Transistors Height 1.039" (26.4mm)   Length 0.799" (20.3mm)  ON Semiconductor Length 0.799" (20.3mm)  Bipolar Transistors Length 0.799" (20.3mm)  ON Semiconductor Bipolar Transistors Length 0.799" (20.3mm)   Material Si  ON Semiconductor Material Si  Bipolar Transistors Material Si  ON Semiconductor Bipolar Transistors Material Si   Mounting Type Through Hole  ON Semiconductor Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  ON Semiconductor Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  ON Semiconductor Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  Bipolar Transistors Number of Pins 3  ON Semiconductor Bipolar Transistors Number of Pins 3   Package Type TO-264  ON Semiconductor Package Type TO-264  Bipolar Transistors Package Type TO-264  ON Semiconductor Bipolar Transistors Package Type TO-264   Polarity NPN  ON Semiconductor Polarity NPN  Bipolar Transistors Polarity NPN  ON Semiconductor Bipolar Transistors Polarity NPN   Power Dissipation 200 W  ON Semiconductor Power Dissipation 200 W  Bipolar Transistors Power Dissipation 200 W  ON Semiconductor Bipolar Transistors Power Dissipation 200 W   Primary Type Si  ON Semiconductor Primary Type Si  Bipolar Transistors Primary Type Si  ON Semiconductor Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 0.7 °C/W  ON Semiconductor Resistance, Thermal, Junction to Case 0.7 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 0.7 °C/W  ON Semiconductor Bipolar Transistors Resistance, Thermal, Junction to Case 0.7 °C/W   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -65 °C  ON Semiconductor Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +150 °C  ON Semiconductor Temperature, Operating, Range -65 to +150 °C  Bipolar Transistors Temperature, Operating, Range -65 to +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Range -65 to +150 °C   Transistor Type NPN  ON Semiconductor Transistor Type NPN  Bipolar Transistors Transistor Type NPN  ON Semiconductor Bipolar Transistors Transistor Type NPN   Type Power  ON Semiconductor Type Power  Bipolar Transistors Type Power  ON Semiconductor Bipolar Transistors Type Power   Voltage, Breakdown, Collector to Emitter 250 V  ON Semiconductor Voltage, Breakdown, Collector to Emitter 250 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 250 V  ON Semiconductor Bipolar Transistors Voltage, Breakdown, Collector to Emitter 250 V   Voltage, Collector to Base 400 V  ON Semiconductor Voltage, Collector to Base 400 V  Bipolar Transistors Voltage, Collector to Base 400 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Base 400 V   Voltage, Collector to Emitter 250 V  ON Semiconductor Voltage, Collector to Emitter 250 V  Bipolar Transistors Voltage, Collector to Emitter 250 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter 250 V   Voltage, Collector to Emitter, Saturation 4 V  ON Semiconductor Voltage, Collector to Emitter, Saturation 4 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 4 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation 4 V   Voltage, Emitter to Base 5 V  ON Semiconductor Voltage, Emitter to Base 5 V  Bipolar Transistors Voltage, Emitter to Base 5 V  ON Semiconductor Bipolar Transistors Voltage, Emitter to Base 5 V   Width 0.209" (5.3mm)  ON Semiconductor Width 0.209" (5.3mm)  Bipolar Transistors Width 0.209" (5.3mm)  ON Semiconductor Bipolar Transistors Width 0.209" (5.3mm)  
电话:400-900-3095
QQ:800152669
关于我们 | Amphenol简介 | Amphenol产品 | Amphenol产品应用 | Amphenol动态 | 按系列选型 | 按产品规格选型 | Amphenol选型手册 | 付款方式 | 联系我们
Copyright © 2017 www.amphenol-connect.com All Rights Reserved. 技术支持：电子元器件 ICP备案证书号:粤ICP备11103613号