MMBD352LT1G -

DIODE, MIXER; 10MA IF; 300 MW @ 25C; 556C/W (MAX.); 1 PF (MAX.); SOT-23

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制造商：: ON Semiconductor ON Semiconductor
制造商产品编号：: MMBD352LT1G
仓库库存编号：: 70099522
技术数据表：: Datasheet

订购热线： 400-900-3095 0755-21000796, QQ:800152669, Email:sales@szcwdz.com

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MMBD352LT1G产品概述

RF Band Switching Diodes, ON Semiconductor
RF (Radio Frequency) diodes suitable for use in HF, RF and Microwave mixing and detection applications.

Brand/Series	Diode Rectifier Series
Capacitance, Junction	1 pF
Configuration	Dual
Current, Forward	10 mA
Package Type	SOT-23
Power Dissipation	225 mW
Primary Type	Schottky Barrier
Temperature, Junction, Maximum	+150 °C
Temperature, Operating	-55 to +150 °C
Voltage, Forward	0.6 V
Voltage, Reverse	7 V
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MMBD352LT1G -

DIODE, MIXER; 10MA IF; 300 MW @ 25C; 556C/W (MAX.); 1 PF (MAX.); SOT-23

MMBD352LT1G产品概述

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