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MMBT2222ALT1G - 

TRANSISTOR; SOT-23; NPN; 40 VDC (MAX.); 75 VDC (MAX.); 6.0 VDC (MAX.); -55

ON Semiconductor MMBT2222ALT1G
声明：图片仅供参考，请以实物为准！
制造商产品编号：
MMBT2222ALT1G
仓库库存编号：
70099528
技术数据表：
View MMBT2222ALT1G Datasheet Datasheet
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MMBT2222ALT1G产品信息

  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  600 mA  
  Current, Gain  35  
  Dimensions  3.04 x 1.40 x 1.01 mm  
  Frequency, Operating  300 MHz  
  Height  0.04" (1.01mm)  
  Length  0.119" (3.04mm)  
  Material  Si  
  Mounting Type  Surface Mount  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  SOT-23  
  Polarity  NPN  
  Power Dissipation  225 W  
  Primary Type  Si  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Transistor Type  NPN  
  Type  General Purpose  
  Voltage, Breakdown, Collector to Emitter  40 V  
  Voltage, Collector to Base  75 V  
  Voltage, Collector to Emitter  40 V  
  Voltage, Collector to Emitter, Saturation  1.6 V  
  Voltage, Emitter to Base  6 V  
  Voltage, Saturation, Base to Emitter  2.6 V  
  Width  0.055" (1.4mm)  
关键词         

MMBT2222ALT1G相关搜索

Brand/Series Transistor Series  ON Semiconductor Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  ON Semiconductor Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  ON Semiconductor Configuration Common Base  Bipolar Transistors Configuration Common Base  ON Semiconductor Bipolar Transistors Configuration Common Base   Current, Collector 600 mA  ON Semiconductor Current, Collector 600 mA  Bipolar Transistors Current, Collector 600 mA  ON Semiconductor Bipolar Transistors Current, Collector 600 mA   Current, Gain 35  ON Semiconductor Current, Gain 35  Bipolar Transistors Current, Gain 35  ON Semiconductor Bipolar Transistors Current, Gain 35   Dimensions 3.04 x 1.40 x 1.01 mm  ON Semiconductor Dimensions 3.04 x 1.40 x 1.01 mm  Bipolar Transistors Dimensions 3.04 x 1.40 x 1.01 mm  ON Semiconductor Bipolar Transistors Dimensions 3.04 x 1.40 x 1.01 mm   Frequency, Operating 300 MHz  ON Semiconductor Frequency, Operating 300 MHz  Bipolar Transistors Frequency, Operating 300 MHz  ON Semiconductor Bipolar Transistors Frequency, Operating 300 MHz   Height 0.04" (1.01mm)  ON Semiconductor Height 0.04" (1.01mm)  Bipolar Transistors Height 0.04" (1.01mm)  ON Semiconductor Bipolar Transistors Height 0.04" (1.01mm)   Length 0.119" (3.04mm)  ON Semiconductor Length 0.119" (3.04mm)  Bipolar Transistors Length 0.119" (3.04mm)  ON Semiconductor Bipolar Transistors Length 0.119" (3.04mm)   Material Si  ON Semiconductor Material Si  Bipolar Transistors Material Si  ON Semiconductor Bipolar Transistors Material Si   Mounting Type Surface Mount  ON Semiconductor Mounting Type Surface Mount  Bipolar Transistors Mounting Type Surface Mount  ON Semiconductor Bipolar Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  ON Semiconductor Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  Bipolar Transistors Number of Pins 3  ON Semiconductor Bipolar Transistors Number of Pins 3   Package Type SOT-23  ON Semiconductor Package Type SOT-23  Bipolar Transistors Package Type SOT-23  ON Semiconductor Bipolar Transistors Package Type SOT-23   Polarity NPN  ON Semiconductor Polarity NPN  Bipolar Transistors Polarity NPN  ON Semiconductor Bipolar Transistors Polarity NPN   Power Dissipation 225 W  ON Semiconductor Power Dissipation 225 W  Bipolar Transistors Power Dissipation 225 W  ON Semiconductor Bipolar Transistors Power Dissipation 225 W   Primary Type Si  ON Semiconductor Primary Type Si  Bipolar Transistors Primary Type Si  ON Semiconductor Bipolar Transistors Primary Type Si   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  Bipolar Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  Bipolar Transistors Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Range -55 to +150 °C   Transistor Type NPN  ON Semiconductor Transistor Type NPN  Bipolar Transistors Transistor Type NPN  ON Semiconductor Bipolar Transistors Transistor Type NPN   Type General Purpose  ON Semiconductor Type General Purpose  Bipolar Transistors Type General Purpose  ON Semiconductor Bipolar Transistors Type General Purpose   Voltage, Breakdown, Collector to Emitter 40 V  ON Semiconductor Voltage, Breakdown, Collector to Emitter 40 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 40 V  ON Semiconductor Bipolar Transistors Voltage, Breakdown, Collector to Emitter 40 V   Voltage, Collector to Base 75 V  ON Semiconductor Voltage, Collector to Base 75 V  Bipolar Transistors Voltage, Collector to Base 75 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Base 75 V   Voltage, Collector to Emitter 40 V  ON Semiconductor Voltage, Collector to Emitter 40 V  Bipolar Transistors Voltage, Collector to Emitter 40 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter 40 V   Voltage, Collector to Emitter, Saturation 1.6 V  ON Semiconductor Voltage, Collector to Emitter, Saturation 1.6 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 1.6 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation 1.6 V   Voltage, Emitter to Base 6 V  ON Semiconductor Voltage, Emitter to Base 6 V  Bipolar Transistors Voltage, Emitter to Base 6 V  ON Semiconductor Bipolar Transistors Voltage, Emitter to Base 6 V   Voltage, Saturation, Base to Emitter 2.6 V  ON Semiconductor Voltage, Saturation, Base to Emitter 2.6 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 2.6 V  ON Semiconductor Bipolar Transistors Voltage, Saturation, Base to Emitter 2.6 V   Width 0.055" (1.4mm)  ON Semiconductor Width 0.055" (1.4mm)  Bipolar Transistors Width 0.055" (1.4mm)  ON Semiconductor Bipolar Transistors Width 0.055" (1.4mm)  
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