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Configuration	Common Base
Current, Collector	300 mA
Current, Gain	40
Dimensions	5.20 x 4.19 x 5.33 mm
Height	0.21" (5.33mm)
Length	0.204" (5.2mm)
Material	Si
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	3
Package Type	TO-92
Polarity	NPN
Power Dissipation	625 mW
Primary Type	Si
Resistance, Thermal, Junction to Case	83.3 °C/W
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Transistor Type	NPN
Type	High Voltage
Voltage, Breakdown, Collector to Emitter	400 V
Voltage, Collector to Base	500 V
Voltage, Collector to Emitter	400 V
Voltage, Collector to Emitter, Saturation	0.75 V
Voltage, Emitter to Base	6 V
Voltage, Saturation, Base to Emitter	0.75 V
Width	0.165" (4.19mm)
关键词

Configuration Common Base  ON Semiconductor Configuration Common Base  Bipolar Transistors Configuration Common Base  ON Semiconductor Bipolar Transistors Configuration Common Base   Current, Collector 300 mA  ON Semiconductor Current, Collector 300 mA  Bipolar Transistors Current, Collector 300 mA  ON Semiconductor Bipolar Transistors Current, Collector 300 mA   Current, Gain 40  ON Semiconductor Current, Gain 40  Bipolar Transistors Current, Gain 40  ON Semiconductor Bipolar Transistors Current, Gain 40   Dimensions 5.20 x 4.19 x 5.33 mm  ON Semiconductor Dimensions 5.20 x 4.19 x 5.33 mm  Bipolar Transistors Dimensions 5.20 x 4.19 x 5.33 mm  ON Semiconductor Bipolar Transistors Dimensions 5.20 x 4.19 x 5.33 mm   Height 0.21" (5.33mm)  ON Semiconductor Height 0.21" (5.33mm)  Bipolar Transistors Height 0.21" (5.33mm)  ON Semiconductor Bipolar Transistors Height 0.21" (5.33mm)   Length 0.204" (5.2mm)  ON Semiconductor Length 0.204" (5.2mm)  Bipolar Transistors Length 0.204" (5.2mm)  ON Semiconductor Bipolar Transistors Length 0.204" (5.2mm)   Material Si  ON Semiconductor Material Si  Bipolar Transistors Material Si  ON Semiconductor Bipolar Transistors Material Si   Mounting Type Through Hole  ON Semiconductor Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  ON Semiconductor Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  ON Semiconductor Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  Bipolar Transistors Number of Pins 3  ON Semiconductor Bipolar Transistors Number of Pins 3   Package Type TO-92  ON Semiconductor Package Type TO-92  Bipolar Transistors Package Type TO-92  ON Semiconductor Bipolar Transistors Package Type TO-92   Polarity NPN  ON Semiconductor Polarity NPN  Bipolar Transistors Polarity NPN  ON Semiconductor Bipolar Transistors Polarity NPN   Power Dissipation 625 mW  ON Semiconductor Power Dissipation 625 mW  Bipolar Transistors Power Dissipation 625 mW  ON Semiconductor Bipolar Transistors Power Dissipation 625 mW   Primary Type Si  ON Semiconductor Primary Type Si  Bipolar Transistors Primary Type Si  ON Semiconductor Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 83.3 °C/W  ON Semiconductor Resistance, Thermal, Junction to Case 83.3 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 83.3 °C/W  ON Semiconductor Bipolar Transistors Resistance, Thermal, Junction to Case 83.3 °C/W   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  Bipolar Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  Bipolar Transistors Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Range -55 to +150 °C   Transistor Type NPN  ON Semiconductor Transistor Type NPN  Bipolar Transistors Transistor Type NPN  ON Semiconductor Bipolar Transistors Transistor Type NPN   Type High Voltage  ON Semiconductor Type High Voltage  Bipolar Transistors Type High Voltage  ON Semiconductor Bipolar Transistors Type High Voltage   Voltage, Breakdown, Collector to Emitter 400 V  ON Semiconductor Voltage, Breakdown, Collector to Emitter 400 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 400 V  ON Semiconductor Bipolar Transistors Voltage, Breakdown, Collector to Emitter 400 V   Voltage, Collector to Base 500 V  ON Semiconductor Voltage, Collector to Base 500 V  Bipolar Transistors Voltage, Collector to Base 500 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Base 500 V   Voltage, Collector to Emitter 400 V  ON Semiconductor Voltage, Collector to Emitter 400 V  Bipolar Transistors Voltage, Collector to Emitter 400 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter 400 V   Voltage, Collector to Emitter, Saturation 0.75 V  ON Semiconductor Voltage, Collector to Emitter, Saturation 0.75 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.75 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.75 V   Voltage, Emitter to Base 6 V  ON Semiconductor Voltage, Emitter to Base 6 V  Bipolar Transistors Voltage, Emitter to Base 6 V  ON Semiconductor Bipolar Transistors Voltage, Emitter to Base 6 V   Voltage, Saturation, Base to Emitter 0.75 V  ON Semiconductor Voltage, Saturation, Base to Emitter 0.75 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 0.75 V  ON Semiconductor Bipolar Transistors Voltage, Saturation, Base to Emitter 0.75 V   Width 0.165" (4.19mm)  ON Semiconductor Width 0.165" (4.19mm)  Bipolar Transistors Width 0.165" (4.19mm)  ON Semiconductor Bipolar Transistors Width 0.165" (4.19mm)