Configuration |
Common Base |
|
Current, Gain |
60 |
|
Dimensions |
5.20 x 4.19 x 5.33 mm |
|
Frequency, Operating |
650 MHz |
|
Height |
0.21" (5.33mm) |
|
Length |
0.204" (5.2mm) |
|
Material |
Si |
|
Mounting Type |
Through Hole |
|
Number of Elements per Chip |
1 |
|
Number of Pins |
3 |
|
Package Type |
TO-92 |
|
Polarity |
NPN |
|
Power Dissipation |
350 W |
|
Primary Type |
Si |
|
Resistance, Thermal, Junction to Case |
125 °C/W |
|
Temperature, Operating, Maximum |
+150 °C |
|
Temperature, Operating, Minimum |
-55 °C |
|
Temperature, Operating, Range |
-55 to +150 °C |
|
Transistor Type |
NPN |
|
Type |
VHF/UHF |
|
Voltage, Breakdown, Collector to Emitter |
25 V |
|
Voltage, Collector to Base |
30 V |
|
Voltage, Collector to Emitter |
25 V |
|
Voltage, Collector to Emitter, Saturation |
0.5 V |
|
Voltage, Emitter to Base |
3 V |
|
Width |
0.165" (4.19mm) |
|
关键词 |