Configuration |
Common Base |
|
Current, Collector |
-1000 mA |
|
Current, Gain |
50 |
|
Dimensions |
5.21 x 4.19 x 7.87 mm |
|
Frequency, Operating |
50 MHz |
|
Height |
0.31" (7.87mm) |
|
Length |
0.205" (5.21mm) |
|
Material |
Si |
|
Mounting Type |
Through Hole |
|
Number of Elements per Chip |
1 |
|
Number of Pins |
3 |
|
Package Type |
TO-92 |
|
Polarity |
PNP |
|
Power Dissipation |
2.5 W |
|
Primary Type |
Si |
|
Resistance, Thermal, Junction to Case |
50 °C/W |
|
Temperature, Operating, Maximum |
+150 °C |
|
Temperature, Operating, Minimum |
-55 °C |
|
Temperature, Operating, Range |
-55 to +150 °C |
|
Transistor Type |
PNP |
|
Type |
High Current |
|
Voltage, Breakdown, Collector to Emitter |
-40 V |
|
Voltage, Collector to Base |
-50 V |
|
Voltage, Collector to Emitter |
-40 V |
|
Voltage, Collector to Emitter, Saturation |
-0.7 V |
|
Voltage, Emitter to Base |
-5 V |
|
Width |
0.165" (4.19mm) |
|
关键词 |